Search Results - "Sawahata, Junji"
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Formation of silicon layer through aluminothermic reduction of quartz substrates
Published in Frontiers in materials (19-09-2022)“…Silicon (Si) films were obtained through aluminothermic reduction of the quartz (SiO 2 ) substrates, where the surface of the quartz in contact with the…”
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Effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of Eu-doped SnO2 thin films prepared by a metal organic decomposition method
Published in Thin solid films (30-06-2018)“…In this study, Eu-doped SnO2 thin films were prepared by a metal organic decomposition method through a pyrolysis of organic acid salts. The effects of…”
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Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition
Published in Japanese Journal of Applied Physics (01-07-2014)“…The structural and optical properties of boron (B)-doped amorphous carbon nitride (a-CNx) thin films with a B content of less than 10 at. % were investigated…”
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Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy
Published in Journal of crystal growth (15-03-2009)“…The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The…”
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Journal Article Conference Proceeding -
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Structural and electrical properties of Sb-doped SnO2 thin films prepared by metal organic decomposition
Published in Thin solid films (01-09-2019)“…Sb-doped SnO2 thin films were prepared by metal organic decomposition through pyrolysis of organic acid salts. The dependence of the structural and electrical…”
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Concentration quenching of Eu-related luminescence in Eu-doped GaN
Published in Applied physics letters (12-07-2004)“…The dependence of Europium (Eu)-related luminescence intensity on the Eu concentration in Eu-doped GaN was studied. This luminescence is observed at 622 nm and…”
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Relationship between defects and optical properties in Er-doped GaN
Published in Journal of crystal growth (01-05-2009)“…The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of…”
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Journal Article Conference Proceeding -
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Effects of Ta, Nb, Ba, and Sb concentration on structural, electrical, and optical properties of SnO2 thin films prepared by metal organic decomposition using spin coating
Published in Thin solid films (30-06-2022)“…•Ta, Nb, Ba, Sb-doped SnO2 thin films were prepared by metal organic decomposition.•Structural deterioration occurred with increasing dopants…”
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Origin of efficient luminescence from GaN:Eu3+ epitaxial films revealed by microscopic photoluminescence imaging spectroscopy
Published in Applied physics letters (06-11-2006)“…We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films by microscopic PL imaging spectroscopy. The GaN:Eu3+ epitaxial…”
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Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy
Published in Journal of crystal growth (01-04-2007)“…Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy were investigated. The Eu-related luminescence originating…”
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Journal Article Conference Proceeding -
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Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties
Published in Journal of crystal growth (01-05-2002)“…Eu-doped GaN with various Eu concentrations were grown by gas source molecular beam epitaxy, and their structural and optical properties were investigated…”
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Optical processes of red emission from Eu doped GaN
Published in Science and technology of advanced materials (01-01-2005)“…A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show…”
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Photoluminescence spectra of Eu-doped GaN with various Eu concentrations
Published in Applied physics letters (06-11-2006)“…Variation of the luminescence spectra of Eu-doped GaN with varying Eu concentration ranging from 0.6 to 8.0 at. % was investigated. Eu-related luminescence…”
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Origin of efficient luminescence from Ga N : Eu 3 + epitaxial films revealed by microscopic photoluminescence imaging spectroscopy
Published in Applied physics letters (07-11-2006)“…We have studied photoluminescence (PL) properties of Eu 3 + -doped GaN ( Ga N : Eu 3 + ) epitaxial films by microscopic PL imaging spectroscopy. The Ga N : Eu…”
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Luminescence and energy-transfer mechanisms in Eu 3 + -doped GaN epitaxial films
Published in Physical review. B, Condensed matter and materials physics (01-01-2010)Get full text
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Eu concentration dependence on structural and optical properties of Eu-doped GaN
Published in Physica Status Solidi (b) (01-10-2004)“…The structural and optical properties of europium‐doped GaN were studied. The Eu‐related luminescence was observed at 622 nm and originated from the intra‐4f…”
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Journal Article Conference Proceeding -
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Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy
Published in Journal of crystal growth (2002)“…Eu-doped GaN has been grown by gas source molecular beam epitaxy on two kinds of sapphire (0 0 0 1) substrates; one has regular atomic step (AS) surface and…”
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