Search Results - "Sawahata, Junji"

  • Showing 1 - 18 results of 18
Refine Results
  1. 1

    Formation of silicon layer through aluminothermic reduction of quartz substrates by Islam, Muhammad Monirul, Sawahata, Junji, Akimoto, Katsuhiro, Sakurai, Takeaki

    Published in Frontiers in materials (19-09-2022)
    “…Silicon (Si) films were obtained through aluminothermic reduction of the quartz (SiO 2 ) substrates, where the surface of the quartz in contact with the…”
    Get full text
    Journal Article
  2. 2

    Effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of Eu-doped SnO2 thin films prepared by a metal organic decomposition method by Sawahata, Junji

    Published in Thin solid films (30-06-2018)
    “…In this study, Eu-doped SnO2 thin films were prepared by a metal organic decomposition method through a pyrolysis of organic acid salts. The effects of…”
    Get full text
    Journal Article
  3. 3
  4. 4

    Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy by Chen, Shaoqiang, Seo, Jongwon, Sawahata, Junji, Akimoto, Katsuhiro

    Published in Journal of crystal growth (15-03-2009)
    “…The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The…”
    Get full text
    Journal Article Conference Proceeding
  5. 5
  6. 6

    Structural and electrical properties of Sb-doped SnO2 thin films prepared by metal organic decomposition by Sawahata, Junji, Kawasaki, Tasuku

    Published in Thin solid films (01-09-2019)
    “…Sb-doped SnO2 thin films were prepared by metal organic decomposition through pyrolysis of organic acid salts. The dependence of the structural and electrical…”
    Get full text
    Journal Article
  7. 7

    Concentration quenching of Eu-related luminescence in Eu-doped GaN by Bang, Hyungjin, Morishima, Shinichi, Sawahata, Junji, Seo, Jongwon, Takiguchi, Mikio, Tsunemi, Masato, Akimoto, Katsuhiro, Nomura, Masaharu

    Published in Applied physics letters (12-07-2004)
    “…The dependence of Europium (Eu)-related luminescence intensity on the Eu concentration in Eu-doped GaN was studied. This luminescence is observed at 622 nm and…”
    Get full text
    Journal Article
  8. 8

    Relationship between defects and optical properties in Er-doped GaN by Chen, Shaoqiang, Uedono, Akira, Seo, Jongwon, Sawahata, Junji, Akimoto, Katsuhiro

    Published in Journal of crystal growth (01-05-2009)
    “…The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of…”
    Get full text
    Journal Article Conference Proceeding
  9. 9

    Effects of Ta, Nb, Ba, and Sb concentration on structural, electrical, and optical properties of SnO2 thin films prepared by metal organic decomposition using spin coating by Sawahata, Junji, Islam, Muhammad Monirul

    Published in Thin solid films (30-06-2022)
    “…•Ta, Nb, Ba, Sb-doped SnO2 thin films were prepared by metal organic decomposition.•Structural deterioration occurred with increasing dopants…”
    Get full text
    Journal Article
  10. 10

    Origin of efficient luminescence from GaN:Eu3+ epitaxial films revealed by microscopic photoluminescence imaging spectroscopy by Ishizumi, Atsushi, Sawahata, Junji, Akimoto, Katsuhiro, Kanemitsu, Yoshihiko

    Published in Applied physics letters (06-11-2006)
    “…We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films by microscopic PL imaging spectroscopy. The GaN:Eu3+ epitaxial…”
    Get full text
    Journal Article
  11. 11

    Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy by Sawahata, Junji, Seo, Jongwon, Takiguchi, Mikio, Saito, Daisuke, Nemoto, Shinya, Akimoto, Katsuhiro

    Published in Journal of crystal growth (01-04-2007)
    “…Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy were investigated. The Eu-related luminescence originating…”
    Get full text
    Journal Article Conference Proceeding
  12. 12

    Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties by Li, Zhiqiang, Bang, Hyungjin, Piao, Guanxi, Sawahata, Junji, Akimoto, Katsuhiro

    Published in Journal of crystal growth (01-05-2002)
    “…Eu-doped GaN with various Eu concentrations were grown by gas source molecular beam epitaxy, and their structural and optical properties were investigated…”
    Get full text
    Journal Article
  13. 13

    Optical processes of red emission from Eu doped GaN by Sawahata, Junji, Bang, Hyungjin, Seo, Jongwon, Akimoto, Katsuhiro

    “…A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show…”
    Get full text
    Journal Article
  14. 14

    Photoluminescence spectra of Eu-doped GaN with various Eu concentrations by Sawahata, Junji, Seo, Jongwon, Chen, Shaoqiang, Takiguchi, Mikio, Saito, Daisuke, Nemoto, Shinya, Akimoto, Katsuhiro

    Published in Applied physics letters (06-11-2006)
    “…Variation of the luminescence spectra of Eu-doped GaN with varying Eu concentration ranging from 0.6 to 8.0 at. % was investigated. Eu-related luminescence…”
    Get full text
    Journal Article
  15. 15

    Origin of efficient luminescence from Ga N : Eu 3 + epitaxial films revealed by microscopic photoluminescence imaging spectroscopy by Ishizumi, Atsushi, Sawahata, Junji, Akimoto, Katsuhiro, Kanemitsu, Yoshihiko

    Published in Applied physics letters (07-11-2006)
    “…We have studied photoluminescence (PL) properties of Eu 3 + -doped GaN ( Ga N : Eu 3 + ) epitaxial films by microscopic PL imaging spectroscopy. The Ga N : Eu…”
    Get full text
    Journal Article
  16. 16
  17. 17

    Eu concentration dependence on structural and optical properties of Eu-doped GaN by Bang, Hyungjin, Morishima, Shinichi, Tsukamoto, Takaharu, Li, Zhiqiang, Sawahata, Junji, Seo, Jongwon, Takiguchi, Mikio, Bando, Yoshio, Akimoto, Katsuhiro

    Published in Physica Status Solidi (b) (01-10-2004)
    “…The structural and optical properties of europium‐doped GaN were studied. The Eu‐related luminescence was observed at 622 nm and originated from the intra‐4f…”
    Get full text
    Journal Article Conference Proceeding
  18. 18

    Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy by Li, Zhiqiang, Bang, Hyungjin, Piao, Guanxi, Sawahata, Junji, Akimoto, Katsuhiro, Kinoshita, Hiroyuki, Watanabe, Kenich

    Published in Journal of crystal growth (2002)
    “…Eu-doped GaN has been grown by gas source molecular beam epitaxy on two kinds of sapphire (0 0 0 1) substrates; one has regular atomic step (AS) surface and…”
    Get full text
    Journal Article