Search Results - "Savransky, S. D."
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Nucleation switching in phase change memory
Published in Applied physics letters (19-03-2007)“…The authors propose a simple physical model of threshold switching in phase change memory cells based on the field induced nucleation of conductive cylindrical…”
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Interpretation and consequences of Meyer-Neldel rule for conductivity of phase change alloys
Published in Physica status solidi. A, Applications and materials science (01-03-2010)“…Measurements of conductivity as a function of temperature were performed on a large number of memory cells of a GeSbTe phase change memory alloy, in both the…”
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Journal Article Conference Proceeding -
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The direct observation of the medium-range order in bulk chalcogenide glass by means of electron field emission
Published in Journal of materials science letters (01-01-1994)“…The origin of the medium-range order is one of the fundamental problems in the structure of glasses, because it has universal and anomalous characteristics and…”
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Functionally expanded phase-change memory: experiments on light influence on threshold voltage
Published in Symposium Non-Volatile Memory Technology 2005 (2005)“…We describe the first experimental results of a light influence on the threshold voltage V t in new ternary lead-free telluride compound (labeled as SA1)…”
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Conference Proceeding
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Magnetic-field influence on the semiconductor-superconductor transition in glassy Ag-Si-Te alloys
Published in Physical review. B, Condensed matter (01-09-1995)Get full text
Journal Article