Search Results - "Satyavolu, S"

Refine Results
  1. 1
  2. 2

    IGM damping wing constraints on the tail end of reionization from the enlarged XQR-30 sample by Greig, B, Mesinger, A, Bañados, E, Becker, G D, Bosman, S E I, Chen, H, Davies, F B, D’Odorico, V, Eilers, A -C, Gallerani, S, Haehnelt, M G, Keating, L, Lai, S, Qin, Y, Ryan-Weber, E, Satyavolu, S, Wang, F, Yang, J, Zhu, Y

    “…ABSTRACT The attenuation of Lyα photons by neutral hydrogen in the intergalactic medium (IGM) at z ≳ 5 continues to be a powerful probe for studying the epoch…”
    Get full text
    Journal Article
  3. 3
  4. 4
  5. 5
  6. 6

    Upper Airway Obstruction in an Adult: An Unusual Presentation—Dissection of the Cervical Aortic Arch by Ramadoss, Rajaram, Satyavolu, Rajkumar S N, Fischer, Roy

    Published in Indian journal of critical care medicine (01-06-2021)
    “…Cervical aortic arch is a rare congenital anomaly. It is usually asymptomatic and an incidental finding but can have symptoms of cough, hoarseness of voice,…”
    Get full text
    Journal Article
  7. 7
  8. 8
  9. 9

    Nondestructive Defect Characterization of Saw-Damage-Etched Multicrystalline Silicon Wafers Using Scanning Electron Acoustic Microscopy by Lei Meng, Rao, S. S. P., Bhatia, C. S., Steen, S. E., Street, A. G., Phang, J. C. H.

    Published in IEEE journal of photovoltaics (01-01-2013)
    “…Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron…”
    Get full text
    Journal Article
  10. 10

    Chemical Mechanical Planarization for Ta-based Superconducting Quantum Devices by Bhatia, Ekta, Kar, Soumen, Nalaskowski, Jakub, Vo, Tuan, Olson, Stephen, Frost, Hunter, Mucci, John, Martinick, Brian, Hung, Pui Yee, Wells, Ilyssa, Schujman, Sandra, Rao, Satyavolu S. Papa

    Published 16-02-2023
    “…Journal of Vacuum Science & Technology B 41, 033202 (2023) We report on the development of a chemical mechanical planarization (CMP) process for thick…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers by Orzali, Tommaso, Vert, Alexey, Lee, Rinus T.P., Norvilas, Aras, Huang, Gensheng, Herman, Joshua L., Hill, Richard J.W., Rao, Satyavolu S. Papa

    Published in Journal of crystal growth (15-09-2015)
    “…Tellurium has several remarkable properties that make it an attractive n-type dopant in III-V semiconductors, namely high incorporation and activation…”
    Get full text
    Journal Article
  13. 13

    Heavily tellurium doped n-type InGaAs grown by MOCVD on 300mm Si wafers by Orzali, Tommaso, Vert, Alexey, Lee, Rinus T.P., Norvilas, Aras, Huang, Gensheng, Herman, Joshua L., Hill, Richard J.W., Rao, Satyavolu S. Papa

    Published in Journal of crystal growth (15-09-2015)
    “…Tellurium has several remarkable properties that make it an attractive n-type dopant in III–V semiconductors, namely high incorporation and activation…”
    Get full text
    Journal Article
  14. 14
  15. 15
  16. 16

    Analysis of IR-based virtual reality tracking using multiple Kinects by Satyavolu, S., Bruder, G., Willemsen, P., Steinicke, F.

    Published in 2012 IEEE Virtual Reality Workshops (VRW) (01-03-2012)
    “…This article presents an analysis of using multiple Microsoft Kinects to track users in a VR system. More specifically, we analyse the capability of Kinects to…”
    Get full text
    Conference Proceeding
  17. 17

    Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy by Meng, Lei, Rao, Satyavolu S. Papa, Bhatia, Charanjit S., Steen, Steven E., Street, Alan G., Phang, Jacob C. H.

    “…Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron…”
    Get full text
    Conference Proceeding
  18. 18

    XQR-30: Black Hole Masses and Accretion Rates of 42 z>6 Quasars by Mazzucchelli, C, Bischetti, M, D'Odorico, V, Feruglio, C, Schindler, J. -T, Onoue, M, Bañados, E, Becker, G. D, Bian, F, Carniani, S, Decarli, R, Eilers, A. -C, Farina, E. P, Gallerani, S, Lai, S, Meyer, R. A, Rojas-Ruiz, S, Satyavolu, S, Venemans, B. P, Wang, F, Yang, J, Zhu, Y

    Published 28-06-2023
    “…A&A 676, A71 (2023) We present bolometric luminosities, black hole masses and Eddington ratios for 42 luminous quasars at z>6 using high signal-to-noise ratio…”
    Get full text
    Journal Article
  19. 19
  20. 20

    Development and characterization of advanced process technologies for the fabrication of crystalline-Si solar cells by Rao, S S Papa, Fisher, K, Neumayer, D, Qiang Huang, Kwietniak, K, Jun Liu, Vichiconti, J, Nalaskowski, J, Newbury, J, Pyzyna, A, Rossnagel, S, Totir, G, Fuller, N

    “…Photovoltaic devices were fabricated at IBM TJ Watson Research Center using a research line designed to run different substrate types concurrently. The process…”
    Get full text
    Conference Proceeding