Search Results - "Satoshi TAKECHI"

Investigation of Factors Affecting the Ability for Gait Using a Cane and Walking Speed in Patients with Hip Fractures: Factors Determining the Ability for Gait Using a Cane are Different from those Determining Walking Speed by KAWABATA, Yuji, SUMIKAWA, Yasuhiro, HAYASHI, Mami, TAKECHI, Satoshi, GOTO, Keita, FUJIMORI, Satomi, KOHARA, Narumi

“…Purpose: The purpose of this study was to clarify factors affecting the ability for gait using a cane and walking speed in patients with hip fractures…”
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Investigation of Factors Affecting the Ability for Gait Using a Cane and Walking Speed in Patients with Hip Fractures : Factors Determining the Ability for Gait Using a Cane are Different from those Determining Walking Speed by Yuji KAWABATA, Yasuhiro SUMIKAWA, Mami HAYASHI, Satoshi TAKECHI, Keita GOTO, Satomi FUJIMORI, Narumi KOHARA

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Molecular Design and Synthesis of 3-Oxocyclohexyl Methacrylate for ArF and KrF Excimer Laser Resist by Nozaki, Koji, Kaimoto, Yuko, Takahashi, Makoto, Takechi, Satoshi, Abe, Naomichi

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Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193 nm Lithography II: Protection Groups Containing an Adamantyl Unit by Matsuzawa, Nobuyuki N., Takechi, Satoshi, Ohfuji, Takeshi, Kuhara, Koichi, Mori, Shigeyasu, Endo, Masayuki, Kamon, Kazuya, Morisawa, Taku, Yamaguchi, Atsuko, Sasago, Masaru

“…The reaction energy of deprotection reactions, glass transition temperature, and the dielectric constant were calculated for photoresists having a…”
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193 nm phase-shifting lithography with single layer resist for VLSIs beyond 1 G-bit DRAM by Asai, Satoru, Takechi, Satoshi, Kitamura, Yoshitaka, Tabata, Yasuko, Nozaki, Koji, Yano, Ei, Hanyu, Isamu

“…The usefulness of ArF lithography with single layer resist based on adamantyl copolymer is demonstrated. Using the alternating phase shifting mask, 0.12 mu m…”
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Progress in ArF single-layer resists by Takechi, S., Otoguro, A., Arita, T.

“…We have developed chemically amplified resists with adamantylmethacrylate, which have good dry-etch resistance for 193 nm lithography. Our resist system based…”
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Multi-generation device fabrication by ArF lithography by Mori, S., Morisawa, T., Matsuzawa, N., Kaimoto, Y., Endo, M., Matsuo, T., Takahashi, M., Naito, T., Naruse, Y., Kishimura, S., Takechi, S., Yamaguchi, A., Uematsu, M., Onodera, T., Nakazawa, K., Kamon, K., Tatsumi, T., Morishita, S., Kuhara, K., Ohfuji, T., Ogawa, T., Ohtsuka, H., Inoue, M., Sasago, M.

“…Summary form only given. Although ArF excimer laser lithography is expected to attain the highest resolution possible in optical lithography, its application…”
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