Search Results - "Sataka, M."

Modifications of WNOx films by keV D and H ions by Matsunami, N., Ohno, N., Tokitani, M., Tsuchiya, B., Sataka, M., Okayasu, S.

“…We have investigated modification of WNOx films (thickness of 20–80 nm) by D and H ions with the energy of ~1 keV, where D and H ions are retained within the…”
Get full text

Growth of Mn-doped ZnO thin films by rf-sputter deposition and lattice relaxation by energetic ion impact by Matsunami, N., Itoh, M., Kato, M., Okayasu, S., Sataka, M., Kakiuchida, H.

“…•We have grown Mn-doped ZnO films on various substrates. We have found change of growth orientation depending on the growth temperature for MgO and r-Al2O3…”
Get full text

Microscopic 3-dimensional mapping of hydrogen bubbles in polycrystalline Al by elastic recoil detection analysis under transmission geometry by Yamazaki, A., Sasa, K., Tomita, S., Ishii, S., Naramoto, H., Sataka, M., Kudo, H., Itoh, G., Ohkubo, M.

“…We have measured microscopic 3-dimensional distribution of plasma-charged hydrogen in polycrystalline Al. The measurements have been carried out…”
Get full text

Clarification of high density electronic excitation effects on the microstructural evolution in UO2 by Sonoda, T., Kinoshita, M., Ishikawa, N., Sataka, M., Iwase, A., Yasunaga, K.

“…In order to understand the properties of ion tracks and the microstructural evolution under accumulation of ion tracks in UO2, 100MeV Zr10+ and 210MeV Xe14+…”
Get full text

Formation of ion tracks in amorphous silicon nitride films with MeV C60 ions by Kitayama, T., Morita, Y., Nakajima, K., Narumi, K., Saitoh, Y., Matsuda, M., Sataka, M., Tsujimoto, M., Isoda, S., Toulemonde, M., Kimura, K.

“…Amorphous silicon nitride (a-SiN) films (thickness 5–100nm) were irradiated with 0.12–5MeV C60, 100MeV Xe, 200MeV Kr, and 200 and 420MeV Au ions. Ion tracks…”
Get full text

Temperature of thermal spikes induced by swift heavy ions by Matsuzaki, S., Hayashi, H., Nakajima, K., Matsuda, M., Sataka, M., Tsujimoto, M., Toulemonde, M., Kimura, K.

“…Few-nm sized gold, platinum and palladium nanoparticles were deposited on amorphous silicon nitride films. These films were irradiated with 420MeV Au and…”
Get full text

Ion induced modifications of Mn-doped ZnO films by Matsunami, N., Itoh, M., Kato, M., Okayasu, S., Sataka, M., Kakiuchida, H.

“…We have studied ion impact effects on atomic structure in terms of X-ray diffraction (XRD), optical absorption and electrical resistivity of Mn(6%)-doped ZnO…”
Get full text

Sputtering of amorphous silicon nitride irradiated with energetic C60 ions: Preferential sputtering and synergy effect between electronic and collisional sputtering by Kitayama, T., Morita, Y., Nakajima, K., Narumi, K., Saitoh, Y., Matsuda, M., Sataka, M., Toulemonde, M., Kimura, K.

“…Amorphous silicon nitride films (thickness 30nm) deposited on Si(001) were irradiated with 30–1080keV C60 and 100MeV Xe ions to fluences ranging from 2×1011 to…”
Get full text

Ion irradiation effects on tungsten-oxide films and charge state effect on electronic erosion by Matsunami, N., Sataka, M., Okayasu, S., Kakiuchida, H.

“…We have studied electronic- and atomic-structure modifications of polycrystalline WO 3 films (bandgap of ∼3 eV) by ion irradiation. WO 3 films were prepared by…”
Get full text

Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11MeV C603+ impacts by Kitayama, T., Nakajima, K., Suzuki, M., Narumi, K., Saitoh, Y., Matsuda, M., Sataka, M., Tsujimoto, M., Isoda, S., Kimura, K.

“…Gold nanoparticles with an average diameter of 3.6nm were deposited on amorphous silicon nitride (a-SiN) films. These samples were irradiated with 1.11MeV…”
Get full text

Equilibrium and non-equilibrium charge-state distributions of 2.0MeV/u carbon ions passing through carbon foils by Imai, M., Sataka, M., Matsuda, M., Okayasu, S., Kawatsura, K., Takahiro, K., Komaki, K., Shibata, H., Nishio, K.

“…Both equilibrium and non-equilibrium charge-state distributions were studied experimentally for 2.0MeV/u carbon ions after passing through carbon foils…”
Get full text

In situ RBS measurements for the effect of swift heavy ion irradiation on metal–insulator interfaces by Hayashi, M., Matsuda, M., Asozu, T., Sataka, M., Nakamura, M., Iwase, A.

“…We have studied the effect of 200MeV Xe ion irradiation on Bi–Al2O3 and Au–Al2O3 interfaces by means of in situ Rutherford backscattering spectrometry (RBS)…”
Get full text

Electrical property modifications of In-doped ZnO films by ion irradiation by Matsunami, N., Fukushima, J., Sataka, M., Okayasu, S., Sugai, H., Kakiuchida, H.

“…Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties,…”
Get full text

Electronic and atomic structure modifications of copper nitride films by ion impact and phase separation by Matsunami, N., Kakiuchida, H., Tazawa, M., Sataka, M., Sugai, H., Okayasu, S.

“…We have studied electronic and atomic structure modifications of Cu 3N films under 100 keV Ne and 100 MeV Xe ion impact. Cu 3N films were prepared on R(11–2…”
Get full text

Clarification of the properties and accumulation effects of ion tracks in CeO2 by Sonoda, T., Kinoshita, M., Ishikawa, N., Sataka, M., Chimi, Y., Okubo, N., Iwase, A., Yasunaga, K.

“…In order to understand the properties of ion tracks and the microstructural evolution under accumulation of ion tracks and Xe ions in CeO2, 70–210MeV Xe10∼14+…”
Get full text

Electronic structure modifications of cuprous-oxide films by ions by Matsunami, N., Fukuoka, O., Tazawa, M., Kakiuchida, H., Sataka, M.

“…We have investigated irradiation effects with 100 keV Ne and N ions on optical properties and atomic structure of cuprous oxide (Cu 2O). Cu 2O films were…”
Get full text

Electronic excitation induced sputtering of insulating and semiconducting oxides by high energy heavy ions by Matsunami, N., Sataka, M., Iwase, A., Okayasu, S.

“…We have measured the electronic sputtering yields of eight samples of insulating and semiconductor oxides by high energy heavy ions for systematic…”
Get full text

Recovery and restructuring induced by fission energy ions in high burnup nuclear fuel by Kinoshita, M., Yasunaga, K., Sonoda, T., Iwase, A., Ishikawa, N., Sataka, M., Yasuda, K., Matsumura, S., Geng, H.Y., Ichinomiya, T., Chen, Y., Kaneta, Y., Iwasawa, M., Ohnuma, T., Nishiura, Y., Nakamura, J., Matzke, Hj

“…In light water commercial reactors, extensive change of grain structure was found at high burnup ceramic fuels. The mechanism is driven by bombardment of…”
Get full text

Ion irradiation effects on optical properties of silicon nitride films by Matsunami, N., Shinde, N., Tazawa, M., Nakao, S., Sataka, M., Chimi, Y.

“…We have investigated effects on amorphous Si 3N 4 films induced by 100 keV Ne and N ions. Si 3N 4 films were deposited on SiO 2-glass substrates by using…”
Get full text

A multi-exciton model for the electronic sputtering of oxides by Matsunami, N., Fukuoka, O., Shimura, T., Sataka, M., Okayasu, S.

“…Three models are examined for the electronic sputtering by high energy heavy ions. It is found that the charged fraction of the sputtered particles is small…”
Get full text