Search Results - "Sasserath, J.N."

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures by de Boer, M.J., Gardeniers, J.G.E., Jansen, H.V., Smulders, E., Gilde, M.-J., Roelofs, G., Sasserath, J.N., Elwenspoek, M.

“…This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at…”
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Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs by Luo, B., Ren, F., Lee, K.P., Pearton, S.J., Wu, C.-S., Johnson, D., Sasserath, J.N.

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Sloped niobium etching using CF sub 4 and O sub 2 by Sasserath, J.N., Vivalda, J.

“…A sloped etching process for Nb is developed for pilot line operations. Reactive ion etching and plasma processes are compared for a CF{sub 4}/O{sub 2}…”
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Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs by Lee, J.W., Jeon, M.H., Devre, M., Mackenzie, K.D., Johnson, D., Sasserath, J.N., Pearton, S.J., Ren, F., Shul, R.J.

“…We investigated etch mechanism and etch depth distribution on GaAs wafers in inductively coupled plasma etching. Effects of two plasma chemistries for GaAs…”
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Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors by Lee, J.W., Jeon, M.H., Cho, G.S., Yim, H.C., Chang, S.K., Kim, K.K., Devre, M., Johnson, D., Sasserath, J.N., Pearton, S.J.

“…We demonstrated an advanced plasma etching technology for AlGaAs over GaAs in a BCl 3/N 2 inductively coupled plasma using an optical emission spectroscopy…”
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High selectivity Inductively Coupled Plasma etching of GaAs over InGaP by Hays, D.C, Cho, H, Lee, J.W, Devre, M.W, Reelfs, B.H, Johnson, D, Sasserath, J.N, Meyer, L.C, Toussaint, E, Ren, F, Abernathy, C.R, Pearton, S.J

“…The dry etch selectivity of GaAs over InGaP in BCl 3/SF 6 discharges with additives of He, Ar, or Xe under Inductively Coupled Plasma conditions was examined…”
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Comparison of the effects of H 2 and D 2 plasma exposure on GaAs MESFETs by Luo, B., Ren, F., Lee, K.P., Pearton, S.J., Wu, C.-S., Johnson, D., Sasserath, J.N.

“…The effect of H 2 and D 2 plasma exposure on the dc and rf performance of implanted GaAs metal semiconductor field effect transistors (MESFETs) was examined as…”
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New contact process using soft etch for stable ohmic characteristics and its application to 0.1 micron CMOS devices by Sumi, H., Yanagida, T., Sugano, Y., Sasserath, J.N.

“…A new contact process using Inductive Coupled Plasma (ICP) soft etch with Ar as an in-situ pretreatment before metallization was developed. The ICP soft etch…”
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