Search Results - "Sasase, M."

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    Irradiation-induced brightening of tarnished Ag nanoparticles by Takahiro, K., Ozaki, K., Wada, M., Terazawa, N., Nishiyama, F., Sasase, M.

    “…We demonstrated that the plasmonic properties of corroded Ag nanoparticles (NPs) were recovered upon low-energy Ar+ irradiation. An intense surface-plasmon…”
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    Journal Article
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    Radiation effects on film formation and nanostructural changes of iron disilicide thin film by Sasase, M., Yamamoto, H., Okayasu, S.

    “…Ion irradiation effects on the synthesis and modification of iron disilicide films have been investigated by cross-sectional transmission electron microscopy…”
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    Journal Article
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    Formation of atomically flat β-FeSi2/Si(100) interface using ion irradiated substrate by Sasase, M., Yamamoto, H., Kurata, H.

    Published in Thin solid films (29-02-2012)
    “…Thin uniform β-FeSi2 films were fabricated on ion irradiated Si(100) substrates to achieve an atomically flat interface. Ion irradiation produces a surface…”
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    Journal Article
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    Observation of individual vortices trapped along columnar defects in high-temperature superconductors by Tonomura, A, Kasai, H, Kamimura, O, Matsuda, T, Harada, K, Nakayama, Y, Shimoyama, J, Kishio, K, Hanaguri, T, Kitazawa, K, Sasase, M, Okayasu, S

    Published in Nature (London) (09-08-2001)
    “…Many superconductors do not entirely expel magnetic flux-rather, magnetic flux can penetrate the superconducting state in the form of vortices. Moving vortices…”
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    Journal Article
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    Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation by Takahiro, K., Minakuchi, Y., Kawaguchi, K., Isshiki, T., Nishio, K., Sasase, M., Yamamoto, S., Nishiyama, F.

    Published in Applied surface science (15-07-2012)
    “…► Well-ordered arrangements of Ag nanoparticles have been observed. ► A δ-layer of tiny Ag nanoparticles was aligned along the SiO2/Si interface. ► A…”
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    Journal Article
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    Low-field anomaly of vortex dynamics in iron-pnictide superconductors by Tamegai, T., Taen, T., Yagyuda, H., Nakajima, Y., Okayasu, S., Sasase, M., Kitamura, H., Murakami, T., Kambara, T., Kanai, Y.

    Published in Physica. C, Superconductivity (01-11-2011)
    “…► Magnetic relaxations in optimally-doped Ba(Fe1–xCox)2As2 shows an anomalous suppression of relaxation rate at low fields. ► Swift particle irradiations…”
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    Journal Article
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    Molecular beam epitaxy of semiconductor (BaSi 2)/metal (CoSi 2) hybrid structures on Si(1 1 1) substrates for photovoltaic application by Ichikawa, Y., Kobayashi, M., Sasase, M., Suemasu, T.

    Published in Applied surface science (30-09-2008)
    “…We have succeeded in growing semiconductor (BaSi 2)/metal (CoSi 2) hybrid structures epitaxially on Si(1 1 1) by molecular beam epitaxy for the first time…”
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    Journal Article Conference Proceeding
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    Ion induced structural modification and nano-crystalline formation of Zr–Al–Ni–Cu metallic glasses by Nagata, S., Sasase, M., Takahiro, K., Tsuchiya, B., Inouye, A., Yamamoto, S., Shikama, T.

    “…The effect of the ion implantation on the phase transformation was studied for glassy and crystalline Zr55Al10Ni5Cu30 alloys, using Au+ ions with 500keV. For…”
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    Journal Article
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    Formation of ‘environmentally friendly’ semiconductor (β-FeSi 2) thin films prepared by ion beam sputter deposition (IBSD) method by Sasase, M, Nakanoya, T, Yamamoto, H, Hojou, K

    Published in Thin solid films (17-12-2001)
    “…‘Environmentally friendly’ semiconductor β-FeSi 2 thin films have been prepared by the ion beam sputter deposition (IBSD) method on Si(100) substrate. The…”
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    Journal Article
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    Effects of heavy-ion irradiation on the vortex state in Ba(Fe1−xCox)2As2 by Tamegai, T., Tsuchiya, Y., Taen, T., Nakajima, Y., Okayasu, S., Sasase, M.

    Published in Physica. C, Superconductivity (01-12-2010)
    “…We report effects of heavy-ion irradiation in Ba(Fe1−xCox)2As2 single crystals. The columnar defects with about 40% of the irradiation dose are confirmed by…”
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    Journal Article Conference Proceeding
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    Depth profiling of carbon in silicon using the 12C(p,p′γ) reaction by Yasuda, K., Ishigami, R., Sasase, M., Ito, Y.

    “…An analytical method has been developed for the measurement of a carbon depth profile of the region a few tens of μm from the surface, using a 12C(p,p′γ)…”
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    Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation by Nakajima, Y., Tsuchiya, Y., Taen, T., Yagyuda, H., Tamegai, T., Okayasu, S., Sasase, M., Kitamura, H., Murakami, T.

    Published in Physica. C, Superconductivity (01-11-2010)
    “…We report the formation of columnar defects in Co-doped BaFe2As2 single crystals with different heavy-ion irradiations. The formation of columnar defects by…”
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    Journal Article Conference Proceeding
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    Critical Current Densities and Vortex Dynamics in Ba(Fe1−xCox)2As2 Single Crystals by Tamegai, T., Taen, T., Tsuchiya, Y., Nakajima, Y., Okayasu, S., Sasase, M.

    “…Superconducting properties are evaluated for high-quality single crystals of Ba(Fe 1− x Co x ) 2 As 2 in a wide range of doping levels. The critical current…”
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    Journal Article Conference Proceeding
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    Photoluminescence of β-FeSi2 thin film prepared by ion beam sputter deposition method by Shimura, K., Yamaguchi, K., Yamamoto, H., Sasase, M., Shamoto, S., Hojou, K.

    “…In this work, photoluminescence (PL) from β-FeSi2 thin film grown by ion beam sputter deposition (IBSD) method is investigated. For the first time, several…”
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    Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(1 1 1) template formed by C +-ion implantation into Si(1 1 1) substrate by Yamamoto, A., Yamauchi, T., Tanikawa, T., Sasase, M., Ghosh, B.K., Hashimoto, A., Ito, Y.

    Published in Journal of crystal growth (19-01-2004)
    “…This paper reports a novel method to grow a wurtzite GaN on Si(1 1 1) by using a single-crystalline 3c-SiC interlayer. The interlayer is formed by the carbon…”
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    Journal Article Conference Proceeding
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    Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth by Ito, Y., Yamauchi, T., Yamamoto, A., Sasase, M., Nishio, S., Yasuda, K., Ishigami, Y.

    Published in Applied surface science (15-11-2004)
    “…A 180keV carbon implantation with an ion dose of 8.0 ± 1.0 × 1017C+/cm2 into Si(111) wafer has been investigated in order to examine the synthesis of 3C-SiC at…”
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    Journal Article Conference Proceeding