Search Results - "Sasase, M."
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1
Controlled shape modification of embedded Au nanoparticles by 3 MeV Au2+-ion irradiation
Published in Applied surface science (01-08-2014)Get full text
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2
Irradiation-induced brightening of tarnished Ag nanoparticles
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15-11-2013)“…We demonstrated that the plasmonic properties of corroded Ag nanoparticles (NPs) were recovered upon low-energy Ar+ irradiation. An intense surface-plasmon…”
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3
Radiation effects on film formation and nanostructural changes of iron disilicide thin film
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-02-2012)“…Ion irradiation effects on the synthesis and modification of iron disilicide films have been investigated by cross-sectional transmission electron microscopy…”
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4
Formation of atomically flat β-FeSi2/Si(100) interface using ion irradiated substrate
Published in Thin solid films (29-02-2012)“…Thin uniform β-FeSi2 films were fabricated on ion irradiated Si(100) substrates to achieve an atomically flat interface. Ion irradiation produces a surface…”
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5
Observation of individual vortices trapped along columnar defects in high-temperature superconductors
Published in Nature (London) (09-08-2001)“…Many superconductors do not entirely expel magnetic flux-rather, magnetic flux can penetrate the superconducting state in the form of vortices. Moving vortices…”
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6
Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation
Published in Applied surface science (15-07-2012)“…► Well-ordered arrangements of Ag nanoparticles have been observed. ► A δ-layer of tiny Ag nanoparticles was aligned along the SiO2/Si interface. ► A…”
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7
X-ray photoelectron and X-ray absorption spectroscopic study on β-FeSi2 thin films fabricated by ion beam sputter deposition
Published in Applied surface science (01-03-2010)Get full text
Journal Article -
8
Low-field anomaly of vortex dynamics in iron-pnictide superconductors
Published in Physica. C, Superconductivity (01-11-2011)“…► Magnetic relaxations in optimally-doped Ba(Fe1–xCox)2As2 shows an anomalous suppression of relaxation rate at low fields. ► Swift particle irradiations…”
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Molecular beam epitaxy of semiconductor (BaSi 2)/metal (CoSi 2) hybrid structures on Si(1 1 1) substrates for photovoltaic application
Published in Applied surface science (30-09-2008)“…We have succeeded in growing semiconductor (BaSi 2)/metal (CoSi 2) hybrid structures epitaxially on Si(1 1 1) by molecular beam epitaxy for the first time…”
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Journal Article Conference Proceeding -
10
Ion induced structural modification and nano-crystalline formation of Zr–Al–Ni–Cu metallic glasses
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-05-2009)“…The effect of the ion implantation on the phase transformation was studied for glassy and crystalline Zr55Al10Ni5Cu30 alloys, using Au+ ions with 500keV. For…”
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Formation of ‘environmentally friendly’ semiconductor (β-FeSi 2) thin films prepared by ion beam sputter deposition (IBSD) method
Published in Thin solid films (17-12-2001)“…‘Environmentally friendly’ semiconductor β-FeSi 2 thin films have been prepared by the ion beam sputter deposition (IBSD) method on Si(100) substrate. The…”
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12
Effects of heavy-ion irradiation on the vortex state in Ba(Fe1−xCox)2As2
Published in Physica. C, Superconductivity (01-12-2010)“…We report effects of heavy-ion irradiation in Ba(Fe1−xCox)2As2 single crystals. The columnar defects with about 40% of the irradiation dose are confirmed by…”
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13
Depth profiling of carbon in silicon using the 12C(p,p′γ) reaction
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-04-2008)“…An analytical method has been developed for the measurement of a carbon depth profile of the region a few tens of μm from the surface, using a 12C(p,p′γ)…”
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14
Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation
Published in Physica. C, Superconductivity (01-11-2010)“…We report the formation of columnar defects in Co-doped BaFe2As2 single crystals with different heavy-ion irradiations. The formation of columnar defects by…”
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Journal Article Conference Proceeding -
15
Observation of Structures of Chain Vortices Inside Anisotropic High- T c Superconductors
Published in Physical review letters (10-06-2002)Get full text
Journal Article -
16
Developments and applications of accelerator system at the Wakasa Wan Energy Research Center
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-12-2005)“…At the Wakasa Wan Energy Research Center (WERC), an accelerator system with a 5MV tandem accelerator and a 200MeV proton synchrotron is used for ion beam…”
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17
Critical Current Densities and Vortex Dynamics in Ba(Fe1−xCox)2As2 Single Crystals
Published in Journal of superconductivity and novel magnetism (01-07-2010)“…Superconducting properties are evaluated for high-quality single crystals of Ba(Fe 1− x Co x ) 2 As 2 in a wide range of doping levels. The critical current…”
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Journal Article Conference Proceeding -
18
Photoluminescence of β-FeSi2 thin film prepared by ion beam sputter deposition method
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-01-2006)“…In this work, photoluminescence (PL) from β-FeSi2 thin film grown by ion beam sputter deposition (IBSD) method is investigated. For the first time, several…”
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19
Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(1 1 1) template formed by C +-ion implantation into Si(1 1 1) substrate
Published in Journal of crystal growth (19-01-2004)“…This paper reports a novel method to grow a wurtzite GaN on Si(1 1 1) by using a single-crystalline 3c-SiC interlayer. The interlayer is formed by the carbon…”
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Journal Article Conference Proceeding -
20
Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth
Published in Applied surface science (15-11-2004)“…A 180keV carbon implantation with an ion dose of 8.0 ± 1.0 × 1017C+/cm2 into Si(111) wafer has been investigated in order to examine the synthesis of 3C-SiC at…”
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Journal Article Conference Proceeding