Search Results - "Sasaki, Takuo"

Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN by Sasaki, Takuo, Iwata, Takuya, Sugitani, Kanya, Kawamura, Takahiro, Akiyama, Toru, Takahasi, Masamitu

“…The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (0001(_)) surfaces was probed using in situ X-ray scattering under molecular beam…”
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Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer by Yamada, Jumpei, Ueda, Yuki, Maruyama, Takahiro, Fujikawa, Seiji, Sasaki, Takuo, Takahasi, Masamitu, Naritsuka, Shigeya

“…•The crystallization of Ni catalyst on the direct growth of graphene was studied.•Cooling rate is important in the precipitation method using W capping…”
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In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates by Fuke, Seiya, Sasaki, Takuo, Takahasi, Masamitu, Hibino, Hiroki

“…In-situ X-ray diffraction was used to investigate the initial stages of GaN growth on graphene-covered SiO2 substrates with or without AlN buffer layers by…”
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Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping by Sasaki, Takuo, Takahasi, Masamitu

“…•Lattice deformations in InGaAs/GaAs(1 1 1)A were studied by in situ RSM.•Anomalous lattice shrinkage along the c-axis was found in…”
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Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X‑ray Diffraction by Takahasi, Masamitu, Kozu, Miwa, Sasaki, Takuo, Hu, Wen

“…The evolution of polytypism during GaAs nanowire growth was investigated by in situ X-ray diffraction. The growth of nanowires was found to start with the…”
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Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction by Sasaki, Takuo, Ishikawa, Fumitaro, Takahasi, Masamitu

“…We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the…”
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Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning by Kutsukake, Kentaro, Kamioka, Takefumi, Matsui, Kota, Takeuchi, Ichiro, Segi, Takashi, Sasaki, Takuo, Fujikawa, Seiji, Takahasi, Masamitu

“…ABSTRACTWe analyzed a number of complicated X-ray diffraction patterns using feature patterns obtained through unsupervised machine learning. A crystalline…”
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Nitride-MBE system for in situ synchrotron X-ray measurements by Sasaki, Takuo, Ishikawa, Fumitaro, Yamaguchi, Tomohiro, Takahasi, Masamitu

“…A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber has two beryllium…”
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Strain relaxation and compositional separation during growth of InGaAs/GaAs(001) by Deki, Ryota, Sasaki, Takuo, Takahasi, Masamitu

“…Strain relaxation of InxGa1−xAs/GaAs(001) with systematically changed In content between x=0.23 and x=0.80 has been studied using in situ synchrotron X-ray…”
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Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction by Sasaki, Takuo, Takahasi, Masamitu

“…In this study, we analyzed the influence of indium supply on the growth dynamics of gold-catalyzed InGaAs nanowires by in situ synchrotron X-ray diffraction. A…”
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Novel materials for high-efficiency III–V multi-junction solar cells by Yamaguchi, Masafumi, Nishimura, Ken-Ichi, Sasaki, Takuo, Suzuki, Hidetoshi, Arafune, Kouji, Kojima, Nobuaki, Ohsita, Yoshio, Okada, Yoshitaka, Yamamoto, Akio, Takamoto, Tatsuya, Araki, Kenji

“…As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge…”
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Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction by Takahasi, Masamitu, Kozu, Miwa, Sasaki, Takuo

“…The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction under different growth conditions. The growth of nanowires was found to start…”
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High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs by Hu, Wen, Suzuki, Hidetoshi, Sasaki, Takuo, Kozu, Miwa, Takahasi, Masamitu

“…This paper describes the development of a high‐speed three‐dimensional reciprocal‐space mapping method designed for the real‐time monitoring of the strain…”
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In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN by Yamaguchi, Tomohiro, Sasaki, Takuo, Fujikawa, Seiji, Takahasi, Masamitu, Araki, Tsutomu, Onuma, Takeyoshi, Honda, Tohru, Nanishi, Yasushi

“…In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted…”
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Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth by Suzuki, Hidetoshi, Sasaki, Takuo, Sai, Akihisa, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, Masafumi, Takahasi, Masamitu, Fujikawa, Seiji

“…Real-time three-dimensional reciprocal space mapping (3D-RSM) measurement during In 0.12 Ga 0.88 As / GaAs ( 001 ) molecular beam epitaxial growth has been…”
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Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction by Suzuki, Hidetoshi, Sasaki, Takuo, Takahasi, Masamitu, Ohshita, Yoshio, Kojima, Nobuaki, Kamiya, Itaru, Fukuyama, Atsuhiko, Ikari, Tetsuo, Yamaguchi, Masafumi

“…The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by in situ X-ray…”
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Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy by Sasaki, Takuo, Suzuki, Hidetoshi, Sai, Akihisa, Takahasi, Masamitu, Fujikawa, Seiji, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi

“…Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space…”
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Numerical Analysis for Radiation Resistant InGaP Solar Cell by Elfiky, Dalia, Yamaguchi, Masafumi, Sasaki, Takuo, Elnawawy, Mohamed, Eldesouky, Tarek, Ghitas, Ahmed

“…Numerical analyses are carried out to optimize radiation resistant of InGaP solar cell under the effect of low energy protons. The radiation degradation…”
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Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001) by Sasaki, Takuo, Shimomura, Kenichi, Suzuki, Hidetoshi, Takahasi, Masamitu, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi

“…In-plane asymmetric strain relaxation in lattice-mismatched InGaAs/GaAs(001) heteroepitaxy is studied by in situ three-dimensional X-ray reciprocal space…”
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Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime by Elfiky, Dalia, Yamaguchi, Masafumi, Sasaki, Takuo, Takamoto, Tatsuya, Morioka, Chiharu, Imaizumi, Mitsuru, Ohshima, Takeshi, Sato, Shin-ichiro, Elnawawy, Mohamed, Eldesoky, Tarek, Ghitas, Ahmed

“…One of the fundamental objectives for research and development of space solar cells is to improve their radiation resistance. InGaP solar cells with low base…”
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