Search Results - "Sarwar, A. T. M. G"

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  1. 1

    Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes by Carnevale, Santino D, Kent, Thomas F, Phillips, Patrick J, Sarwar, A. T. M. G, Selcu, Camelia, Klie, Robert F, Myers, Roberto C

    Published in Nano letters (10-07-2013)
    “…Polarization-induced nanowire light emitting diodes (PINLEDs) are fabricated by grading the Al composition along the c-direction of AlGaN nanowires grown on Si…”
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    Journal Article
  2. 2

    Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency by May, Brelon J, Belz, Matthew R, Ahamed, Arshad, Sarwar, A. T. M. G, Selcu, Camelia M, Myers, Roberto C

    Published in ACS nano (24-04-2018)
    “…Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride…”
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    Journal Article
  3. 3

    Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes by May, Brelon J., Selcu, Camelia M., Sarwar, A. T. M. G., Myers, Roberto C.

    Published in Applied physics letters (26-02-2018)
    “…As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting…”
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    Journal Article
  4. 4

    Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon by Carnevale, S. D., Marginean, C., Phillips, P. J., Kent, T. F., Sarwar, A. T. M. G., Mills, M. J., Myers, R. C.

    Published in Applied physics letters (02-04-2012)
    “…Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111)…”
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    Journal Article
  5. 5

    Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon by Carnevale, S. D, Marginean, C, Phillips, P. J, Kent, T. F, Sarwar, A. T. M. G, Mills, M. J, Myers, R. C

    Published 23-03-2012
    “…Appl. Phys. lett. 100, 142115 (2012) Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular…”
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    Journal Article
  6. 6

    Ballistic current in In rich InGaAs surface channel MOSFETs by Sarwar, A T M G, Siddiqui, M R, Haque, A

    “…Ballistic drain current of III-V surface channel MOSFETs has been investigated using over-the-barrier transport model. Inversion biased electrostatic…”
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    Conference Proceeding