Search Results - "Sarusi, G."
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Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes
Published in Applied physics letters (11-01-2016)“…Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed…”
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A methodology and model for the pull-in parameters of magnetostatic actuators
Published in Journal of microelectromechanical systems (01-12-2005)“…Magnetostatic actuators exhibit bistability similarly to the pull-in phenomena of electrostatic actuators. In this paper a methodology and model for the…”
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Cathodoluminescence Study of Micro-crack-induced Stress Relief for AIN Films on Si(111)
Published in Journal of electronic materials (01-12-2006)“…Spatially, spectrally, and depth-resolved cathodoluminescence (CL) measurements were performed for high-quality thin AIN films grown on Si(111). CL spectra…”
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Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)
Published in Journal of electronic materials (01-12-2006)Get full text
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Integrated HBT/QWIP structure for dual color imaging
Published in Infrared physics & technology (01-10-2005)“…An integrated two-terminal structure of quantum well infrared photodetector (QWIP) and heterojunction bipolar phototransistor (HBT) for dual band imaging is…”
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Improved performance of quantum well infrared photodetectors using random scattering optical coupling
Published in Applied physics letters (21-02-1994)“…We demonstrate that a random scattering reflector on top of a quantum well infrared photodetector increases the optical coupling (i.e., increases the infrared…”
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A monolithic LWIR/NIR multispectral QWIP for night vision and see spot
Published in Infrared physics & technology (01-06-2001)“…A two stack two color quantum well infrared photodetector (QWIP) for simultaneously detection of LWIR and near infrared (NIR) radiation is demonstrated. The…”
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LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP
Published in Infrared physics & technology (01-04-2007)“…A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9–1.6μm) and the long wavelength IR…”
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1 Gb/s Si high quantum efficiency monolithically integrable λ=0.88 μm detector
Published in Applied physics letters (29-05-1995)“…We propose and demonstrate a 1 Gb/s high quantum efficiency Si MSM metal-semiconductor-metal detector which is complementary metal-oxide semiconductor…”
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QWIP or other alternative for third generation infrared systems
Published in Infrared physics & technology (01-10-2003)“…Choosing the right detector technology for third generation thermal imaging systems is directly derived from the requirements of these new generation infrared…”
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Journal Article Conference Proceeding -
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High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors
Published in Applied physics letters (20-06-1994)“…We have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound,…”
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Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) (01-12-1990)“…Planar n/sup +/p Hg/sub 1-x/ Cd/sub x/Te (x=0.23) photodiodes passivated with ZnS were irradiated by a Co/sup 60/ gamma source. A strong increase in the…”
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Journal Article Conference Proceeding -
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Cathodolumjnescence study of micro-crack-induced stress relief for AlN films on Si(111)
Published in Journal of electronic materials (01-12-2006)“…Spatially, spectrally, and depth-resolved cathodoluminescence (CL) measurements were performed for high-quality thin AlN films grown on Si(lll). CL spectra…”
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Microcrack-induced strain relief in Ga N ∕ Al N quantum dots grown on Si(111)
Published in Physical review. B, Condensed matter and materials physics (01-02-2007)Get full text
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15-/spl mu/m 128/spl times/128 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector focal plane array camera
Published in IEEE transactions on electron devices (01-01-1997)“…In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetectors…”
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15-μm 128×128 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector focal plane array camera
Published in IEEE transactions on electron devices (01-01-1997)Get full text
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9-/spl mu/m cutoff 256/spl times/256 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector hand-held camera
Published in IEEE transactions on electron devices (01-01-1997)“…A 9-/spl mu/m cutoff 256/spl times/256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise…”
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9-μm cutoff 256×256 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector hand-held camera
Published in IEEE transactions on electron devices (01-01-1997)Get full text
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