Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared

Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared

A novel, high performance optoelectronic switch is introduced. The device is a Si-MOSFET with Ge gate that can be fabricated at the nanoscale with very low capacitance. Current gain of up to 1000times is demonstrated.

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Bibliographic Details
Published in:OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference pp. 1 - 3
Main Authors: Okyay, A.K., Pethe, A.J., Kuzum, D., Latif, S., Miller, D.A.A., Saraswat, A.K.C.
Format: Conference Proceeding
Language:English
Published: IEEE 01-03-2007
Subjects:
Capacitance
Nanoscale devices
Switches
Online Access:Get full text
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Description
Summary:A novel, high performance optoelectronic switch is introduced. The device is a Si-MOSFET with Ge gate that can be fabricated at the nanoscale with very low capacitance. Current gain of up to 1000times is demonstrated.
ISBN:9781557528315
1557528314
DOI:10.1109/OFC.2007.4348424