Search Results - "Saraniti, M."

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors by Marino, F.A., Faralli, N., Palacios, T., Ferry, D.K., Goodnick, S.M., Saraniti, M.

“…This brief aims to show the effects of threading edge dislocations on the DC and RF performance of GaN high-electron mobility transistor (HEMT) devices. A…”
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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length by Akis, R., Ayubi-Moak, J.S., Faralli, N., Ferry, D.K., Goodnick, S.M., Saraniti, M.

“…Ultrashort gate-length pseudomorphic high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. The RF response and…”
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Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors by Saraniti, M., Goodnick, S.M.

“…We present a fullband cellular automaton (CA) code for simulation of electron and hole transport in Si and GaAs. In this implementation, the entire Brillouin…”
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Teflon™-coated silicon apertures for supported lipid bilayer membranes by Wilk, S. J., Goryll, M., Laws, G. M., Goodnick, S. M., Thornton, T. J., Saraniti, M., Tang, J., Eisenberg, R. S.

“…We present a method for microfabricating apertures in a silicon substrate using well-known cleanroom technologies resulting in highly reproducible giga-seal…”
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Ballistic Transport in InP-Based HEMTs by Akis, R., Faralli, N., Ferry, D.K., Goodnick, S.M., Phatak, K.A., Saraniti, M.

“…Ballistic transport has been of interest in semiconductor devices for quite some time, and its effect has been used to predict quite-different device…”
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Comparative analysis of SOI and GOI MOSFETs by Beysserie, S., Branlard, J., Aboud, S., Goodnick, S.M., Saraniti, M.

“…In this paper, the authors use a full-band particle-based simulator based on the cellular Monte Carlo method to investigate and compare the performance of…”
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Towards the global modeling of InGaAs-based pseudomorphic HEMTs by Ayubi-Moak, J. S., Akis, R., Ferry, D. K., Goodnick, S. M., Faralli, N., Saraniti, M.

“…We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors ( p…”
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First-principles modeling of high-field transport in diamond by Shoemaker, J., Vatan, R., Biswas, T., Singh, A., Saraniti, M., Goodnick, S. M.

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Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer by Formicone, G.F., Saraniti, M., Vasileska, D.Z., Ferry, D.K.

“…A 50 nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity…”
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Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues by Guerra, D., Ferry, D. K., Goodnick, S. M., Saraniti, M., Marino, F. A.

“…We report for the first time the simulation of the large-signal dynamic load-line of high-Q matched mm-wave power amplifiers obtained through a Monte Carlo…”
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Global Modeling of high frequency devices by Ayubi-Moak, J. S., Goodnick, S. M., Saraniti, M.

“…In this work, we utilize the Finite-Difference Time Domain (FDTD) Method coupled to a full-band, Cellular Monte Carlo (CMC) simulator to model the behavior of…”
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Overshoot velocity in ultra-broadband THz studies in GaAs and InP by Saraniti, M., Hu, Y., Goodnick, S.M., Wigger, S.J.

“…We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has…”
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Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations by Aboud, S., Saraniti, M., Eisenberg, R.

“…In this work, a self-consistent Langevin dynamics simulator will be presented, and computational issues unique to the simulation of charge transport through…”
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Numerical challenges in particle-based approaches for the simulation of semiconductor devices by Saraniti, M., Tang, J., Goodnick, S.M., Wigger, S.J.

“…The aim of this paper is to review and discuss the most challenging aspects of the particle-based methods for simulation of charge transport in semiconductor…”
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Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs by Chiney, P., Branlard, J., Aboud, S., Saraniti, M., Goodnick, S.

“…In this work, a 25 nm gate length three-dimensional tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation…”
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Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations by Branlard, J., Aboud, S., Goodnick, S., Saraniti, M.

“…The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic…”
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A Poisson P3M Force Field Scheme for Particle-Based Simulations of Ionic Liquids by Aboud, S., Marreiro, D., Saraniti, M., Eisenberg, R.

“…In this work we propose a force-field scheme for the self-consistent particle-based simulation of electrolytic solutions. Within this approach, the…”
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Coupling Maxwell's Equations to Full Band Particle-Based Simulators by Ayubi-Moak, J.S., Goodnick, S.M., Aboud, S.J., Saraniti, M., El-Ghazaly, S.

“…In this work we utilize the Finite-Difference Time Domain (FDTD) Method coupled to a full band, particle-based simulator to solve for the total Lorentz force…”
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Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors by Wigger, S, Saraniti, M, Goodnick, S, Leitenstorfer, A

“…Motivated by recent experimental measurements (A. Leitenstorfer et al., 2000. Physical Review B 61(24): 16642–16652), this work presents the transient analysis…”
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Ion Channels on Silicon by Wilk, S. J., Petrossian, L., Goryll, M., Thornton, T. J., Goodnick, S. M., Tang, J. M., Eisenberg, R. S., Saraniti, M., Wong, D., Schmidt, J. J., Montemagno, C. D.

“…We present results showing that silicon substrates can be used as a universal platform for recording the electrical activity of ion channels inserted into…”
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