Search Results - "Saragih, Daniel"
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1
Using diffusion models to generate synthetic labeled data for medical image segmentation
Published in International journal for computer assisted radiology and surgery (01-08-2024)“…Purpose Medical image analysis has become a prominent area where machine learning has been applied. However, high-quality, publicly available data are limited…”
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2
The effect of recycled coarse aggregate (RCA) with surface treatment on concrete mechanical properties
Published in MATEC Web of Conferences (01-01-2018)“…This paper discusses the recycling system for concrete needed due to environmental and resource preservation issues. Construction and demolition waste is one…”
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3
Effects of Ge substitution on morphology and electrical properties of Cu2Sn(S,Se)3 bulk at a fixed Se/[Se+S] composition
Published in Journal of solid state chemistry (01-11-2017)“…Ge-substituted Cu2Sn(S,Se)3 bulks with Cu2(Sn1-xGex)(S,Se)3 formula at x = 0, 0.25, 0.50, 0.75, and 1.0 were synthesized by reactive liquid phase sintering,…”
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4
Germanium substitution effect on the property and performance of Cu2ZnSnSe4 thin films and its solar cell having absorber layer made by sputtering with single metallic target plus selenization
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-11-2019)“…A schematic diagram of DC magnetron sputtering system for sputter single metallic target of CZTGSe. [Display omitted] •CZTGSe films were prepared with…”
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5
Prognostic Factors for Survival of Patients with Biliary Atresia Following Kasai Surgery
Published in Kobe journal of the medical sciences (2020)“…Biliary atresia (BA) is a progressive obstruction and fibro-obliteration of the extrahepatic and intrahepatic biliary tract that causes cholestatic jaundice in…”
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6
The effect of the Cu+/Cu2+ ratio on the redox reactions by nanoflower CuNiOS catalysts
Published in Chemical engineering science (02-02-2019)“…[Display omitted] •Bimetal CuNiOS oxysulfide nanoflower was prepared by a feasible method.•CuNiOS performed high redox activity in the dark without additional…”
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Using Diffusion Models to Generate Synthetic Labelled Data for Medical Image Segmentation
Published 25-10-2023“…Medical image analysis has become a prominent area where machine learning has been applied. However, high quality, publicly available data is limited either…”
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Journal Article -
8
An Empirical Study of Aegis
Published 24-04-2024“…Bit flipping attacks are one class of attacks on neural networks with numerous defense mechanisms invented to mitigate its potency. Due to the importance of…”
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9
A new V-doped Bi2(O,S)3 oxysulfide catalyst for highly efficient catalytic reduction of 2-nitroaniline and organic dyes
Published in Chemosphere (Oxford) (01-12-2017)“…A new type of convenient, and environmentally friendly, Vanadium (V)-doped Bi2(O,S)3 oxysulfide catalyst with different V contents was successfully synthesized…”
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10
Investigation of Mg dopant in Cu sub(2)SnSe sub(3) thin films for photovoltaic applications
Published in Journal of alloys and compounds (25-10-2016)“…Mg-doped Cu sub(2)SnSe sub(3) films were prepared by DC magnetron co-sputtering at room temperature for 1 h with two different targets of Cu and Sn or Cu-Mg…”
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11
Investigation of Mg dopant in Cu2SnSe3 thin films for photovoltaic applications
Published in Journal of alloys and compounds (25-10-2016)“…Mg-doped Cu2SnSe3 films were prepared by DC magnetron co-sputtering at room temperature for 1 h with two different targets of Cu and Sn or Cu-Mg and Sn based…”
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Journal Article -
12
Characterization of Ag-doped Cu2ZnSnSe4 bulks material and their application as thin film semiconductor in solar cells
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-11-2017)“…(a) Schematic band diagram of a Ag-0.2-CZTSe solar cell under zero-bias voltage condition made of n-type CdS/ZnO/ITO under AM 1.5 G simulated illumination, (b)…”
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13
Structural and electrical property analysis of bulk Cu 1-x Ag x SbS 2
Published in Journal of solid state chemistry (01-08-2017)Get full text
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14
Structural and electrical property analysis of bulk Cu1-xAgxSbS2
Published in Journal of solid state chemistry (01-08-2017)“…Ag-doped CuSbS2 bulk materials with the (Cu1-xAgx)SbS2 (Ag-x-CAS) formula at x=0, 0.025, 0.05, 0.1, and 0.15 were prepared at 400°C for 2h by reactive…”
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15
Thin film solar cell based on p-CuSbS sub(2) together with Cd-free GaN/InGaN bilayer
Published in Journal of materials science. Materials in electronics (01-02-2017)“…CuSbS sub(2) thin film solar cell with 2.99 % efficiency has been demonstrated by using the Cd-free GaN and In sub(0.15)Ga sub(0.85)N as n-type semiconductor…”
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Thin film solar cell based on p-CuSbS^sub 2^ together with Cd-free GaN/InGaN bilayer
Published in Journal of materials science. Materials in electronics (01-02-2017)“…CuSbS2 thin film solar cell with 2.99 % efficiency has been demonstrated by using the Cd-free GaN and In0.15Ga0.85N as n-type semiconductor bilayer. CuSbS2…”
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Journal Article -
17
Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer
Published in Journal of materials science. Materials in electronics (01-02-2017)“…CuSbS 2 thin film solar cell with 2.99 % efficiency has been demonstrated by using the Cd-free GaN and In 0.15 Ga 0.85 N as n -type semiconductor bilayer…”
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Journal Article -
18
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9A and a high rectification ratio above 105
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-08-2017)“…Zn-doped GaN films have been deposited on SiO2/Si (100), substrates by RF reactive sputtering at 100–400°C with single cermet targets. [Display omitted]…”
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Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-08-2017)Get full text
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20
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10-9 A and a high rectification ratio above 105
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-08-2017)“…Zn-doped GaN films have been deposited on Si (1 0 0), SiO 2/Si (1 0 0), and glass substrates by RF reactive sputtering at 100-400 °C with single cermet…”
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