Search Results - "Sano, Shigekazu"

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    Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals by Detchprohm, Theeradetch, Yano, Masahiro, Sano, Shigekazu, Nakamura, Ryo, Mochiduki, Shingo, Nakamura, Tetsuya, Amano, Hiroshi, Akasaki, Isamu

    Published in Japanese Journal of Applied Physics (01-01-2001)
    “…Using periodically grooved substrates, we propose a new approach to the growth of low-dislocation-density GaN single crystal. Three different substrates of…”
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    Journal Article
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    Low-dislocation-density GaN and Al xGa 1− xN ( x⩽0.13) grown on grooved substrates by Sano, Shigekazu, Detchprohm, Theeradetch, Mochizuki, Shingo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Published in Journal of crystal growth (2002)
    “…We proposed the heteroepitaxial lateral overgrowth technique using grooved sapphire (0 0 0 1) and (1 1 2 ̄ 0) SiC(0 0 0 1) Si and Si(1 1 1) substrates to…”
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    Journal Article
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    Reduction of threading dislocation density in Al XGa 1− XN grown on periodically grooved substrates by Mochizuki, Shingo, Detchprohm, Theeradetch, Sano, Shigekazu, Nakamura, Tetsuya, Amano, Hiroshi, Akasaki, Isamu

    Published in Journal of crystal growth (2002)
    “…We proposed a heteroepitaxial lateral overgrowth technique using periodically grooved substrates to prepare a GaN single crystal with low dislocation density…”
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    Journal Article
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    Low-dislocation-density Al xGa 1− xN single crystals grown on grooved substrates by Sano, Shigekazu, Detchprohm, Theeradetch, Yano, Masahiro, Nakamura, Ryo, Mochizuki, Shingo, Amano, Hiroshi, Akasaki, Isamu

    “…We propose a new approach to the direct growth of low-dislocation-density Al x Ga 1− x N single crystal films on highly mismatched substrates. Four different…”
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    Journal Article
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