Search Results - "Sankin, V.I."

Silicon Carbide Ultraviolet Photodetectors and Their Application in Ecological Monitoring by Sankin, V.I., Chelibanov, V.P.

“…An investigation of the characteristics of different silicon carbide photodetectors was made: 1. with a Schottky barrier; 2. with p–n junction, made by epitaxy…”
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New efficient canal of THz emission from SiC natural superlattices in conditions of Wannier-Stark localization by Sankin, V.I., Andrianov, A.V., Petrov, A.G., Nagalyuk, S.S., Shkrebiy, P.P., Zachar'in, A.O.

“…The comprehensive study of the terahertz electroluminescence caused by the Bloch oscillations of the electrons in the natural superlattices of 8H-, 6H-SiC with…”
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Terahertz-emission generation caused by new effects in the 6H-SiC natural superlattice by Sankin, V. I., Andrianov, A. V., Zakhar’in, A. O., Petrov, A. G.

“…It is demonstrated that the 6 H -SiC natural superlattice has two simultaneously electroluminescence channels in the terahertz range: narrow lines at…”
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Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates by Sankin, V. I., Shkrebiy, P. P., Yakimova, R.

“…4 H - Si C  p+-n−-n+ junctions have been prepared on 8° off oriented plane aiming to investigate conditions of Wannier-Stark localization (WSL), and…”
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Strong field electron transport in silicon carbide superlattice by Sankin, V.I.

“…A number of regions with negative differential conduction were observed in current-field characteristics of silicon carbide superlattice. The values of…”
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Wannier-Stark localization in 6H-SiC JFETs by Sankin, V.I., Shkrebiy, P.P., Lebedev, A.A.

“…The paper presents Wannier-Stalk localization related phenomena investigated in 6H-SiC JFET structures. The p-type, 2 /spl mu/m thick layer doped to N/sub…”
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Silicon carbide ultraviolet photodetectors by Sankin, V.I., Shkrebiy, P.P., Savkina, N.S.

“…In this work, silicon carbide ultraviolet photodetectors were presented. Photosensitivity spectra of a photodetector with p-n junction formed by the diffusion…”
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4H- and 6H-SiC vertical static induction transistor with p-n junction as a gate by Sankin, V.I., Shkrebiy, P.P.

“…Silicon carbide has attracted considerable interest as a material for high power, high frequency devices. The unique properties such as high thermal…”
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The oscillating electrical domains in the 6H-SiC electron unipolar structures by Sankin, V.I., Shkrebiy, P.P.

“…The discovery of negative differential conductivity (NDC) and mobile domains due to Bloch oscillations are important results in the study of strong field…”
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Study of Ni-based ohmic contacts fabricated on n-6H-SiC polar faces by Rastegaeva, M.G., Andreev, A.N., Bobanin, A.I., Mokhov, E.N., Sankin, V.I.

“…Electrical characteristics and composition of interface region were studied for Ni-based ohmic contacts prepared on the n-6H-SiC polar faces at the various…”
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