Search Results - "Sankaran, V.A."

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  1. 1

    Role of the amplifying gate in the turn-on process of involute structure thyristors by Sankaran, V.A., Hudgins, J.L., Portnoy, W.M.

    Published in IEEE transactions on power electronics (01-04-1990)
    “…The switching characteristics of involute thyristors with and without the amplifying gate structure are discussed. The effects of peak gate currents (10-100 A)…”
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    Journal Article
  2. 2

    Can an AC (alternating current) electrical system replace the present DC system in the automobile? An investigative feasibility study. I. System architecture by Masrur, M.A., Sitar, D.S., Sankaran, V.A.

    Published in IEEE transactions on vehicular technology (01-08-1998)
    “…In the aerospace industry, the 400-Hz AC system replaced the DC system, and the latest trend in aerospace industry involves a combination of mixed AC and DC…”
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    Journal Article
  3. 3

    Thermal analysis of high-power modules by Van Godbold, C., Sankaran, V.A., Hudgins, J.L.

    Published in IEEE transactions on power electronics (01-01-1997)
    “…A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor-stack types: direct…”
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    Journal Article
  4. 4

    Electrolytic capacitor life testing and prediction by Sankaran, V.A., Rees, F.L., Avant, C.S.

    “…The aluminum electrolytic capacitor is widely used in various power electronic circuits and systems such as 3-phase PWM inverters. Its functions include, bus…”
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    Conference Proceeding
  5. 5

    Can an AC (alternating current) electrical system replace the present DC system in the automobile? An investigative feasibility study. II. Comparison and tradeoffs by Masrur, M.A., Sitar, D.S., Sankaran, V.A.

    Published in IEEE transactions on vehicular technology (01-08-1998)
    “…For Part I see ibid., vol.47, no.3, p.1072-80 (1998). In Part I of this paper, the possibility of using an AC (alternating current) electrical system instead…”
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    Journal Article
  6. 6

    Power cycling reliability of IGBT power modules by Sankaran, V.A., Chen, C., Avant, C.S., Xu, X.

    “…The goal of this study was to understand the power cycling reliability of IGBT power modules. These power modules are made up of multi-layer stacks and consist…”
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    Conference Proceeding
  7. 7

    High-energy pulse-switching characteristics of thyristors by Sankaran, V.A., Hudgins, J.L., Portnoy, W.M.

    Published in IEEE transactions on power electronics (01-10-1993)
    “…Experiments were conducted to study the high energy, high di/dt pulse-switching characteristics of silicon controlled rectifiers (SCRs) with and without the…”
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    Journal Article
  8. 8

    Novel designs in power modules by Van Godbold, C., Sankaran, V.A., Hudgins, J.L.

    “…This work is a brief comparison of the three different packaging technologies used in present-day power modules. Flux plots are used to diagnose the thermal…”
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    Conference Proceeding Journal Article
  9. 9

    A numerical approach based on transient thermal analysis to estimate the safe operating frequencies of thyristors by Sankaran, V.A., Hudgins, J.L., Rhodes, C.A., Portnoy, W.M.

    Published in IEEE transactions on power electronics (01-10-1991)
    “…The spatio-temporal distribution of temperatures in high-power SCRs used for switching high di/dt current pulses were simulated using the finite element method…”
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    Journal Article Conference Proceeding
  10. 10

    Power electronics in electric vehicles: challenges and opportunities by Xu, X., Sankaran, V.A.

    “…The authors identify technical challenges in meeting customer's expectations and possible opportunities for power electronics in EV (electric vehicle)…”
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    Conference Proceeding
  11. 11

    Transient thermal analysis of thyristors using finite element method by Sankaran, V.A., Hudgins, J.L., Rhodes, C.A., Portnoy, W.M.

    “…The finite element method (FEM) was used to obtain spatial and temporal distribution of temperatures in high-power SCRs (silicon-controlled rectifiers) used…”
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    Conference Proceeding
  12. 12

    High di/dt switching with thyristors by Hudgins, J.L., Sankaran, V.A., Portnoy, W.M., Marks, K.M.

    “…Two types of involute-structured SCRs, one with the amplifying gate shorted to the pilot gate (shorted devices), and the other with a normal gate arrangement…”
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    Conference Proceeding
  13. 13

    Thermal analysis of high power modules by Van Godbold, C., Sankaran, V.A., Hudgins, J.L.

    “…A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor stack types: direct…”
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    Conference Proceeding
  14. 14

    A comparison of power module transistor stacks by Van Godbold, C., Sankaran, V.A., Hudgins, J.L.

    “…This work presents an analysis of the effects of substrate and baseplate thermal conductivity on thermal resistance for three power module technologies: direct…”
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    Conference Proceeding
  15. 15

    Repetitive switching using thyristors for high energy and high di/dt applications by Sankaran, V.A., Hudgins, J.L.

    “…Repetitive switching characteristics of an involute structure SCR and an anchor structure GTO without an amplifying gate are discussed. A brief summary of the…”
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    Conference Proceeding
  16. 16

    Comparison of GTOs and SCRs for high di/dt switching by Kennedy, C.E., Hudgins, J.L., Sankaran, V.A., Portnoy, W.M.

    “…Tests performed on two different types of thyristors, involute structure silicon controlled rectifiers (SCRs) and anchor structure symmetric gate turn-off…”
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    Conference Proceeding