Search Results - "Sankaran, V.A."
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Role of the amplifying gate in the turn-on process of involute structure thyristors
Published in IEEE transactions on power electronics (01-04-1990)“…The switching characteristics of involute thyristors with and without the amplifying gate structure are discussed. The effects of peak gate currents (10-100 A)…”
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2
Can an AC (alternating current) electrical system replace the present DC system in the automobile? An investigative feasibility study. I. System architecture
Published in IEEE transactions on vehicular technology (01-08-1998)“…In the aerospace industry, the 400-Hz AC system replaced the DC system, and the latest trend in aerospace industry involves a combination of mixed AC and DC…”
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3
Thermal analysis of high-power modules
Published in IEEE transactions on power electronics (01-01-1997)“…A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor-stack types: direct…”
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Journal Article -
4
Electrolytic capacitor life testing and prediction
Published in IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting (1997)“…The aluminum electrolytic capacitor is widely used in various power electronic circuits and systems such as 3-phase PWM inverters. Its functions include, bus…”
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Conference Proceeding -
5
Can an AC (alternating current) electrical system replace the present DC system in the automobile? An investigative feasibility study. II. Comparison and tradeoffs
Published in IEEE transactions on vehicular technology (01-08-1998)“…For Part I see ibid., vol.47, no.3, p.1072-80 (1998). In Part I of this paper, the possibility of using an AC (alternating current) electrical system instead…”
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Journal Article -
6
Power cycling reliability of IGBT power modules
Published in IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting (1997)“…The goal of this study was to understand the power cycling reliability of IGBT power modules. These power modules are made up of multi-layer stacks and consist…”
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Conference Proceeding -
7
High-energy pulse-switching characteristics of thyristors
Published in IEEE transactions on power electronics (01-10-1993)“…Experiments were conducted to study the high energy, high di/dt pulse-switching characteristics of silicon controlled rectifiers (SCRs) with and without the…”
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Novel designs in power modules
Published in Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). Vol. 1, pp. 911-915. 1995 (1995)“…This work is a brief comparison of the three different packaging technologies used in present-day power modules. Flux plots are used to diagnose the thermal…”
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A numerical approach based on transient thermal analysis to estimate the safe operating frequencies of thyristors
Published in IEEE transactions on power electronics (01-10-1991)“…The spatio-temporal distribution of temperatures in high-power SCRs used for switching high di/dt current pulses were simulated using the finite element method…”
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Journal Article Conference Proceeding -
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Power electronics in electric vehicles: challenges and opportunities
Published in Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting (1993)“…The authors identify technical challenges in meeting customer's expectations and possible opportunities for power electronics in EV (electric vehicle)…”
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Conference Proceeding -
11
Transient thermal analysis of thyristors using finite element method
Published in 21st Annual IEEE Conference on Power Electronics Specialists (1990)“…The finite element method (FEM) was used to obtain spatial and temporal distribution of temperatures in high-power SCRs (silicon-controlled rectifiers) used…”
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Conference Proceeding -
12
High di/dt switching with thyristors
Published in IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium (1988)“…Two types of involute-structured SCRs, one with the amplifying gate shorted to the pilot gate (shorted devices), and the other with a normal gate arrangement…”
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Conference Proceeding -
13
Thermal analysis of high power modules
Published in Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95 (1995)“…A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor stack types: direct…”
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Conference Proceeding -
14
A comparison of power module transistor stacks
Published in Proceedings of PESC '95 - Power Electronics Specialist Conference (1995)“…This work presents an analysis of the effects of substrate and baseplate thermal conductivity on thermal resistance for three power module technologies: direct…”
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Conference Proceeding -
15
Repetitive switching using thyristors for high energy and high di/dt applications
Published in PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference (1991)“…Repetitive switching characteristics of an involute structure SCR and an anchor structure GTO without an amplifying gate are discussed. A brief summary of the…”
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Conference Proceeding -
16
Comparison of GTOs and SCRs for high di/dt switching
Published in Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting (1990)“…Tests performed on two different types of thyristors, involute structure silicon controlled rectifiers (SCRs) and anchor structure symmetric gate turn-off…”
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Conference Proceeding