Search Results - "Sangregorio, Enrico"

Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations by Medina, Elisabetta, Sangregorio, Enrico, Crnjac, Andreo, Romano, Francesco, Milluzzo, Giuliana, Vignati, Anna, Jakšic, Milko, Calcagno, Lucia, Camarda, Massimo

“…Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for…”
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Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications by Meli, Alessandro, Muoio, Annamaria, Reitano, Riccardo, Sangregorio, Enrico, Calcagno, Lucia, Trotta, Antonio, Parisi, Miriam, Meda, Laura, La Via, Francesco

“…The aim of this work was a deep spectroscopical characterization of a thick 4H SiC epitaxial layer and a comparison of results between samples before and after…”
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First Characterization of Novel Silicon Carbide Detectors with Ultra-High Dose Rate Electron Beams for FLASH Radiotherapy by Romano, Francesco, Milluzzo, Giuliana, Di Martino, Fabio, D’Oca, Maria Cristina, Felici, Giuseppe, Galante, Federica, Gasparini, Alessia, Mariani, Giulia, Marrale, Maurizio, Medina, Elisabetta, Pacitti, Matteo, Sangregorio, Enrico, Vanreusel, Verdi, Verellen, Dirk, Vignati, Anna, Camarda, Massimo

“…Ultra-high dose rate (UHDR) beams for FLASH radiotherapy present significant dosimetric challenges. Although novel approaches for decreasing or correcting ion…”
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Single-Ion Counting with an Ultra-Thin-Membrane Silicon Carbide Sensor by Sangregorio, Enrico, Calcagno, Lucia, Medina, Elisabetta, Crnjac, Andreo, Jakšic, Milko, Vignati, Anna, Romano, Francesco, Milluzzo, Giuliana, De Napoli, Marzio, Camarda, Massimo

“…In recent times, ion implantation has received increasing interest for novel applications related to deterministic material doping on the nanoscale, primarily…”
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