Search Results - "Sandow, C."

Ex vivo effects of insulin on the structural integrity of equine digital lamellae by Sandow, C., Fugler, L. A., Leise, B., Riggs, L., Monroe, W. T., Totaro, N., Belknap, J., Eades, S.

“…Summary Background Laminitis has a considerable impact on the equine industry. Endocrinopathic laminitis is the most common form and affected horses often have…”
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Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors by Sandow, C., Knoch, J., Urban, C., Zhao, Q.-T., Mantl, S.

“…We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping…”
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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs by Richter, S., Sandow, C., Nichau, A., Trellenkamp, S., Schmidt, M., Luptak, R., Bourdelle, K. K., Zhao, Q. T., Mantl, S.

“…This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon…”
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Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation by Mueller, M., Zhao, Q.T., Urban, C., Sandow, C., Buca, D., Lenk, S., Estévez, S., Mantl, S.

“…We present a systematic study of the Schottky barrier lowering induced by dopant segregation during nickel germanidation at NiGe/n-Ge(1 0 0) contacts. We used…”
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Opportunities and challenges of a 1200 V IGBT for 5 V gate voltage operation by Imperiale, I., Baburske, R., Arnold, T., Philippou, A., Griebl, E., Wolter, F., Thees, H.-J., Mauder, A., Niedernostheide, F.-J., Sandow, C.

“…This work presents a novel scaling approach for IGBTs which applies constant electric-field scaling while keeping the short-circuit current density, the…”
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Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon by Roeckerath, M., Lopes, J. M. J., Durğun Özben, E., Sandow, C., Lenk, S., Heeg, T., Schubert, J., Mantl, S.

“…Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by…”
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Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI by Urban, C., Sandow, C., Zhao, Q.-T., Knoch, J., Lenk, S., Mantl, S.

“…In this paper, we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation…”
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Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation by Urban, C., Emam, M., Sandow, C., Zhao, Q.T., Fox, A., Mantl, S., Raskin, J.-P.

“…In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a…”
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Progress towards a large area, thin DEPFET detector module by Fischer, P., Andricek, L., Herrmann, S., Karagounis, M., Kohrs, R., Kreidl, C., Krüger, H., Lutz, G., Moser, H.G., Perić, I., Porro, M., Reuen, L., Richter, R.H., Rummel, S., Sandow, C., Strüder, L., Törne, E.v., Treis, J., Trimpl, M., Velthuis, J.J., Wermes, N.

“…Large arrays of depleted field effect transistor (DEPFET) detector elements are one possible technology for the vertex detector of the planned International…”
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Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface by Zhao, Q.T., Mi, S.B., Jia, C.L., Urban, C., Sandow, C., Habicht, S., Mantl, S.

“…Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 °C. Depending on the S+ dose and the Ni thickness, we…”
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GLOBAL BURNED AREA MAPPING FROM EUROPEAN SATELLITES: THE ESA FIRE_CCI PROJECT by Chuvieco, E., Sandow, C., Guenther, K. P., González-Alonso, F., Pereira, J. M., Pérez, O., Bradley, A. V., Schultz, M., Mouillot, F., Ciais, P.

“…The European Space Agency (ESA) Climate Change Initiative (CCI) is part of the European contribution to the Global Climate Observing System (GCOS) program…”
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A DEPFET pixel matrix system for the ILC vertex detector by Trimpl, M., Andricek, L., Fischer, P., Kohrs, R., Krüger, H., Lutz, G., Moser, H.G., Peric, I., Reuen, L., Richter, R.H., Sandow, C., Strüder, L., Treis, J., Wermes, N.

“…The DEPFET detector offers radiation detection and amplification jointly by embedding a field effect transistor into fully depleted silicon. Due to the…”
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Development of a prototype module for a DEPFET pixel vertex detector for a linear collider by Kohrs, R., Andricek, L., Fischer, P., Harter, M., Karagounis, M., Kruger, H., Lutz, G., Moser, H.G., Peric, I., Porro, M., Reuen, L., Richter, R.H., Sandow, C., Struder, L., Trimpl, M., Wermes, N.

“…For operation at a linear collider the excellent noise performance of depleted field effect transistor (DEPFET) pixels allows building very thin detectors with…”
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Performance of a DEPFET prototype module for the ILC vertex detector by Reuen, L., Kohrs, R., Velthuis, J.J., Andricek, L., Fischer, P., Giesen, F., Kruger, H., Lutz, G., Mathes, M., Moser, H.G., Peric, I., Richter, R.H., Sandow, C., von Torne, E., Trimpl, M., Treis, J., Wermes, N.

“…For the detection of secondary vertices of long lived bottom and charm quarks at the proposed International Linear Collider (ILC) a DEPFET pixel detector is…”
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Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL by Porro, M., Andricek, L., Aschauer, S., Bayer, M., Becker, J., Bombelli, L., Castoldi, A., De Vita, G., Diehl, I., Erdinger, F., Facchinetti, S., Fiorini, C., Fischer, P., Gerlach, T., Graafsma, H., Guazzoni, C., Hansen, K., Kalavakuru, P., Klar, H., Kugel, A., Lechner, P., Lemke, M., Lutz, G., Manghisoni, M., Mezza, D., Muntefering, D., Pietsch, U., Quartieri, E., Randall, M., Re, V., Reckleben, C., Sandow, C., Soldat, J., Struder, L., Szymanski, J., Weidenspointner, G., Wunderer, C. B.

“…We present the development of the DSSC instrument: an ultra-high speed detector system for the new European XFEL in Hamburg. The DSSC will be able to record…”
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Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing by Smith, J T, Sandow, C, Das, S, Minamisawa, R A, Mantl, S, Appenzeller, J

“…We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of…”
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Influence of quasi-3D filament geometry on the latch-up threshold of high-voltage trench-IGBTs by Toechterle, C., Pfirsch, F., Sandow, C., Wachutka, G.

“…Current filaments are inherently three-dimensional phenomena regardless of the chip topography, which can be stripe-or checkerboard-shaped. Therefore, we…”
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Evolution of current filaments limiting the safe-operating area of high-voltage trench-IGBTs by Toechterle, C., Pfirsch, F., Sandow, C., Wachutka, G.

“…An improved understanding of the physical processes leading to the formation of current filaments and latch-up in large arrays of monolithically integrated…”
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IGBT with superior long-term switching behavior by asymmetric trench oxide by Sandow, C., Brandt, P., Felsl, H.-P., Niedernostheide, F.-J., Pfirsch, F., Schulze, H.-J., Stegner, A., Umbach, F., Santos, F., Wagner, W.

“…The continued shrinking of IGBT chips calls for new design approaches to ensure reliable and stable switching operation during the chip lifetime. We…”
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Free-carrier absorption experiments for the investigation of the physical device properties in IGBTs with hydrogen-related donors by Korzenietz, A., Wachutka, G., Hille, F., Sandow, C., Niedernostheide, F.-J

“…Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical…”
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