Search Results - "Sandoval, T. E."

The Consequences of Random Sequential Adsorption for the Precursor Packing and Growth-Per-Cycle of Atomic Layer Deposition Processes by Tezsevin, I., Deijkers, J. H., Merkx, M. J. M., Kessels, W. M. M., Sandoval, T. E., Mackus, A. J. M.

“…Atomic layer deposition (ALD) processes are known to deposit submonolayers of material per cycle, primarily attributed to steric hindrance and a limited number…”
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Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor by Tezsevin, I., Maas, J. F. W., Merkx, M. J. M., Lengers, R., Kessels, W. M. M., Sandoval, T. E., Mackus, A. J. M.

“…Area-selective atomic layer deposition using small-molecule inhibitors (SMIs) involves vapor-phase dosing of inhibitor molecules, resulting in an…”
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Packing of inhibitor molecules during area-selective atomic layer deposition studied using random sequential adsorption simulations by Li, J., Tezsevin, I., Merkx, M. J. M., Maas, J. F. W., Kessels, W. M. M., Sandoval, T. E., Mackus, A. J. M.

“…Area-selective atomic layer deposition (ALD) is of interest for applications in self-aligned processing of nanoelectronics. Selective deposition is generally…”
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