Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism

In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B ≤ 9 T in the temperature range T = (1.8–70) K is studied. The electron quantum lifetime, τq, is determined and the contributions of various scattering mechanisms to τq(T) are separated. I...

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Bibliographic Details
Published in:	Physica. E, Low-dimensional systems & nanostructures Vol. 165; p. 116113
Main Authors:	Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Sandakov, N.S., Shelushinina, N.G., Yakunin, M.V.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-01-2025
Subjects:	Double quantum wells Electron-electron interaction Inelastic electron-electron scattering Quantum lifetime Double quantum wells Quantum lifetime Electron-electron interaction Inelastic electron-electron scattering
Online Access:	Get full text
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Summary:	In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B ≤ 9 T in the temperature range T = (1.8–70) K is studied. The electron quantum lifetime, τq, is determined and the contributions of various scattering mechanisms to τq(T) are separated. It is shown that the observed nonmonotonic temperature dependence of the electron quantum lifetime is due to a combination of the interference contribution from the exchange electron-electron interaction in the ballistic regime and the inelastic electron-electron scattering in the diffusion regime (Fukuyama-Abrahams mechanism). •Resistivity of InGaAs/GaAs strongly coupled double quantum wells in in-plane magnetic field are analyzed.•Atypical for 2D systems with weak disorder nonparabolic temperature dependence of electron quantum lifetime 1/τq(T) is found.•It is shown that 1/τq(T) is determined by interference contribution to conductivity and inelastic electron-electron scattering.•Linear increase of τq(T) at T ˃ 20 K is due to interference induced electron-electron exchange interaction.•Inelastic electron-electron scattering rate is described with good accuracy by Fukuyama-Abrahams law in the diffusion limit.
ISSN:	1386-9477
DOI:	10.1016/j.physe.2024.116113