Search Results - "Sanchez, Errol"

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  1. 1

    Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics by Chen, Robert, Gupta, Suyog, Huang, Yi-Chiau, Huo, Yijie, Rudy, Charles W, Sanchez, Errol, Kim, Yihwan, Kamins, Theodore I, Saraswat, Krishna C, Harris, James S

    Published in Nano letters (08-01-2014)
    “…We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a…”
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    Journal Article
  2. 2

    Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing by Chen, Robert, Huang, Yi-Chiau, Gupta, Suyog, Lin, Angie C., Sanchez, Errol, Kim, Yihwan, Saraswat, Krishna C., Kamins, Theodore I., Harris, James S.

    Published in Journal of crystal growth (15-02-2013)
    “…We report on the characterization of high Sn-content (∼10% Sn) GeSn films grown on (001) Ge/Si substrates using reduced-pressure chemical vapor deposition…”
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    Journal Article
  3. 3

    Hole Mobility Enhancement in Compressively Strained pMOSFETs by Gupta, Suyog, Huang, Yi-Chiau, Kim, Yihwan, Sanchez, Errol, Saraswat, Krishna C.

    Published in IEEE electron device letters (01-07-2013)
    “…Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole…”
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    Journal Article
  4. 4

    Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition by Wang, Qi, Ward, Scott, Gedvilas, Lynn, Keyes, Brian, Sanchez, Errol, Wang, Shulin

    Published in Applied physics letters (19-01-2004)
    “…We have studied silicon nitride thin films deposited by hot-wire chemical vapor deposition as a function of the substrate temperature and hydrogen dilution. We…”
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    Journal Article
  5. 5

    Low-Temperature Growth of Epitaxial β-SiC on Si(100) Using Supersonic Molecular Beams of Methylsilane by Sanchez, Errol C, Sibener, Steven J

    Published in The journal of physical chemistry. B (22-08-2002)
    “…Epitaxial β-SiC films have been successfully grown on Si(100) at substrate temperatures considerably lower than those used during conventional CVD growth. This…”
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    Journal Article
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    Dry-wet digital etching of Ge1−xSnx by Shang, Colleen K, Wang, Vivian, Chen, Robert, Gupta Suyog, Huang Yi-Chiau, Pao, James J, Huo Yijie, Sanchez, Errol, Kim Yihwan, Kamins, Theodore I, Harris, James S

    Published in Applied physics letters (08-02-2016)
    “…The development of a precise micromachining process for Ge1–xSnx has the potential to enable both the fabrication and optimization of Ge1−xSnx-based devices in…”
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    Journal Article
  9. 9

    Dry-wet digital etching of Ge1− x Sn x by Shang, Colleen K., Wang, Vivian, Chen, Robert, Gupta, Suyog, Huang, Yi-Chiau, Pao, James J., Huo, Yijie, Sanchez, Errol, Kim, Yihwan, Kamins, Theodore I., Harris, James S.

    Published in Applied physics letters (08-02-2016)
    “…The development of a precise micromachining process for Ge1– x Sn x has the potential to enable both the fabrication and optimization of Ge1− x Sn x -based…”
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    Journal Article
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    Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge sub(1-x)Sn sub(x)): A Novel Route for Ge sub(1-x)Sn sub(x) Nanostructure Fabrication by Gupta, Suyog, Chen, Robert, Huang, Yi-Chiau, Kim, Yihwan, Sanchez, Errol, Harris, James S, Saraswat, Krishna C

    Published in Nano letters (04-08-2013)
    “…We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge sub(1-x)Sn sub(x)). We address the…”
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    Journal Article
  12. 12

    Electrical Characterization of GaP-Silicon Interface for Memory and Transistor Applications by Pal, A., Nainani, A., Zhiyuan Ye, Xinyu Bao, Sanchez, E., Saraswat, K. C.

    Published in IEEE transactions on electron devices (01-07-2013)
    “…Process conditions of gallium phosphide (GaP) metal-organic chemical vapor deposition growth on silicon (Si) are optimized by material characterization…”
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    Journal Article
  13. 13

    Ultrathin InAs-channel MOSFETs on Si substrates by Cheng-Ying Huang, Xinyu Bao, Zhiyuan Ye, Sanghoon Lee, Hanwei Chiang, Haoran Li, Chobpattana, Varistha, Thibeault, Brian, Mitchell, William, Stemmer, Susanne, Gossard, Arthur, Sanchez, Errol, Rodwell, Mark

    “…Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were…”
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    Conference Proceeding
  14. 14

    Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics by Lin, J.-Y Jason, Gupta, Suyog, Yi-Chiau Huang, Yihwan Kim, Miao Jin, Sanchez, Errol, Chen, Robert, Balram, Krishna, Miller, David, Harris, James, Saraswat, Krishna

    Published in 2013 Symposium on VLSI Technology (01-06-2013)
    “…In this work, we demonstrate the low temperature fabrication of high quality GeSn-On-Insulator (GSOI) which forms the crucial module for monolithic 3DIC. The…”
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    Conference Proceeding
  15. 15

    Improvement of Si doping of In0.53Ga0.47As fin by heated implant by Wood, Bingxi, Hatem, Christopher, Xinyu Bao, Hongwen Zhou, Ming Zhang, Miao Jin, Hao Chen, Man-Ping Cai, Munnangi, Samuel Swaroop, Okazaki, Motoya, Sanchez, Errol, Brand, Adam

    “…III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si + ion implant of…”
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    Conference Proceeding
  16. 16

    GaP source-drain SOI 1T-DRAM: Solving the key technological challenges by Pal, Ashish, Nainani, Aneesh, Zhiyuan Ye, Xinyu Bao, Sanchez, Errol, Saraswat, Krishna C.

    “…SOI based GaP source drain 1T DRAM with silicon channel is proposed. Using BJT-latch based programing, it is shown that the scalability of GaP-SD 1T-DRAM can…”
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    Conference Proceeding
  17. 17

    Highly selective dry etching of germanium over germanium-tin (Ge(1-x)Sn(x)): a novel route for Ge(1-x)Sn(x) nanostructure fabrication by Gupta, Suyog, Chen, Robert, Huang, Yi-Chiau, Kim, Yihwan, Sanchez, Errol, Harris, James S, Saraswat, Krishna C

    Published in Nano letters (14-08-2013)
    “…We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge(1-x)Sn(x)). We address the challenges in…”
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    Journal Article
  18. 18

    Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–x Sn x ): A Novel Route for Ge1–x Sn x Nanostructure Fabrication by Gupta, Suyog, Chen, Robert, Huang, Yi-Chiau, Kim, Yihwan, Sanchez, Errol, Harris, James S, Saraswat, Krishna C

    Published in Nano letters (14-08-2013)
    “…We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge1–x Sn x ). We address the challenges in…”
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    Journal Article
  19. 19

    Supersonic molecular beam growth of epitaxial beta-SiC on Si(100) by Sanchez, Errol Antonio Carranceja

    “…This dissertation examines the control of reagent kinetic energy as a growth parameter during the molecular beam deposition of epitaxial $\beta$-SiC on…”
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    Dissertation
  20. 20

    Thermal chemical vapor deposition of epitaxial germanium tin alloys by Yihwan Kim, Yi-Chiau Huang, Sanchez, Errol, Chu, Schubert

    “…A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor…”
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    Conference Proceeding