Search Results - "Sanchez, Errol"
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Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics
Published in Nano letters (08-01-2014)“…We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a…”
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Journal Article -
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Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Published in Journal of crystal growth (15-02-2013)“…We report on the characterization of high Sn-content (∼10% Sn) GeSn films grown on (001) Ge/Si substrates using reduced-pressure chemical vapor deposition…”
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3
Hole Mobility Enhancement in Compressively Strained pMOSFETs
Published in IEEE electron device letters (01-07-2013)“…Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole…”
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4
Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition
Published in Applied physics letters (19-01-2004)“…We have studied silicon nitride thin films deposited by hot-wire chemical vapor deposition as a function of the substrate temperature and hydrogen dilution. We…”
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Low-Temperature Growth of Epitaxial β-SiC on Si(100) Using Supersonic Molecular Beams of Methylsilane
Published in The journal of physical chemistry. B (22-08-2002)“…Epitaxial β-SiC films have been successfully grown on Si(100) at substrate temperatures considerably lower than those used during conventional CVD growth. This…”
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6
Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication
Published in Nano letters (14-08-2013)Get full text
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7
Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs
Published in IEEE electron device letters (01-07-2013)Get full text
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8
Dry-wet digital etching of Ge1−xSnx
Published in Applied physics letters (08-02-2016)“…The development of a precise micromachining process for Ge1–xSnx has the potential to enable both the fabrication and optimization of Ge1−xSnx-based devices in…”
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Journal Article -
9
Dry-wet digital etching of Ge1− x Sn x
Published in Applied physics letters (08-02-2016)“…The development of a precise micromachining process for Ge1– x Sn x has the potential to enable both the fabrication and optimization of Ge1− x Sn x -based…”
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Journal Article -
10
Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge 1– x Sn x ): A Novel Route for Ge 1– x Sn x Nanostructure Fabrication
Published in Nano letters (14-08-2013)Get full text
Journal Article -
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Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge sub(1-x)Sn sub(x)): A Novel Route for Ge sub(1-x)Sn sub(x) Nanostructure Fabrication
Published in Nano letters (04-08-2013)“…We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge sub(1-x)Sn sub(x)). We address the…”
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Journal Article -
12
Electrical Characterization of GaP-Silicon Interface for Memory and Transistor Applications
Published in IEEE transactions on electron devices (01-07-2013)“…Process conditions of gallium phosphide (GaP) metal-organic chemical vapor deposition growth on silicon (Si) are optimized by material characterization…”
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Journal Article -
13
Ultrathin InAs-channel MOSFETs on Si substrates
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01-04-2015)“…Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were…”
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Conference Proceeding -
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Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics
Published in 2013 Symposium on VLSI Technology (01-06-2013)“…In this work, we demonstrate the low temperature fabrication of high quality GeSn-On-Insulator (GSOI) which forms the crucial module for monolithic 3DIC. The…”
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Conference Proceeding -
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Improvement of Si doping of In0.53Ga0.47As fin by heated implant
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01-04-2015)“…III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si + ion implant of…”
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Conference Proceeding -
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GaP source-drain SOI 1T-DRAM: Solving the key technological challenges
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01-10-2013)“…SOI based GaP source drain 1T DRAM with silicon channel is proposed. Using BJT-latch based programing, it is shown that the scalability of GaP-SD 1T-DRAM can…”
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Conference Proceeding -
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Highly selective dry etching of germanium over germanium-tin (Ge(1-x)Sn(x)): a novel route for Ge(1-x)Sn(x) nanostructure fabrication
Published in Nano letters (14-08-2013)“…We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge(1-x)Sn(x)). We address the challenges in…”
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Journal Article -
18
Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–x Sn x ): A Novel Route for Ge1–x Sn x Nanostructure Fabrication
Published in Nano letters (14-08-2013)“…We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge1–x Sn x ). We address the challenges in…”
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Journal Article -
19
Supersonic molecular beam growth of epitaxial beta-SiC on Si(100)
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Dissertation -
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Thermal chemical vapor deposition of epitaxial germanium tin alloys
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01-06-2014)“…A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor…”
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Conference Proceeding