Search Results - "Sanchez, E.K."

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications by Müller, St.G., Sanchez, E.K., Hansen, D.M., Drachev, R.D., Chung, G., Thomas, B., Zhang, J., Loboda, M.J., Dudley, M., Wang, H., Wu, F., Byrappa, S., Raghothamachar, B., Choi, G.

“…We review the progress of silicon carbide (SiC) bulk growth by the sublimation method, highlighting recent advances at Dow Corning, which resulted in the…”
Get full text

Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC by Wang, H., Dudley, M., Wu, F., Yang, Y., Raghothamachar, B., Zhang, J., Chung, G., Thomas, B., Sanchez, E.K., Mueller, S.G., Hansen, D., Loboda, M.J.

“…Synchrotron x-ray topography and KOH etching studies have been carried out on n -type 4H-SiC offcut substrates before and after homoepitaxial growth to study…”
Get full text

Origin of basal plane bending in hexagonal silicon carbide single crystals by Lee, J.W., Skowronski, M., Sanchez, E.K., Chung, G.

“…4H-SiC crystals grown by the physical vapor transport method were investigated using high-resolution X-ray diffraction, defect selective etching, and…”
Get full text

Formation of thermal decomposition cavities in physical vapor transport of silicon carbide by Sanchez, Edward K., Kuhr, Thomas, Heydemann, Volker D., Snyder, David W., Rohrer, Gregory S., Skowronski, Marek

“…The relationship between seed mounting and the formation of thermal decomposition cavities in physical vapor transport grown silicon carbide was investigated…”
Get full text