Highly scalable and manufacturable heterogeneous charge trap NAND technology

For the first time, we will present production-ready heterogeneous charge trap NAND technology based on Silicon Rich Nitride. The competitive product performance, reliability, and manufacturability demonstrated at the 43nm node, in conjunction with the planar cell architecture have laid the foundati...

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Bibliographic Details

Published in:	2013 5th IEEE International Memory Workshop pp. 60 - 63
Main Authors:	Haddad, S., Fang, S., Chang, K., Shetty, S., Chen, C., Kim, U., Fang, T., Ortiz, S., Thurgate, T., Ramsbey, M., Kang, I., Janai, M., Neo, J., Singh, P. K., Nagatani, G., Samqui, A., Sugino, R., Hui, A., Tsai, F., Bell, S., Matsumoto, D., Gabriel, C., Sun, Y., Pak, J., Tehrani, S.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2013
Subjects:	Charge Trap Memory Computer architecture Heterogeneous nitride Interference Logic gates NAND Nonvolatile memory Programming Silicon Silicon-Rich Nitride SiRN
Online Access:	Get full text
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