Search Results - "Samberg, J. P."

Overgrowth of GaN on GaN nanowires produced by mask-less etching by Frajtag, P., Hosalli, A.M., Samberg, J.P., Colter, P.C., Paskova, T., El-Masry, N.A., Bedair, S.M.

“…We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in…”
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Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films by Frajtag, P., Samberg, J.P., El-Masry, N.A., Nepal, N., Bedair, S.M.

“…We report on the epitaxial growth of GaN films on GaN nanowires. GaN nanowires were prepared by the mask-less dry etching technique. The etched, then annealed…”
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Growth and Characterization of InxGa1−xAs/GaAs1−yPy Strained-Layer Superlattices with High Values of y (~80%) by Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Bedair, S. M.

“…Strained-layer superlattice (SLS) structures, such as InGaAs/GaAsP lattice matched to GaAs, have shown great potential in absorption devices such as…”
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Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices by Colter, P. C., Carlin, C. Z., Samberg, J. P., Bradshaw, G. K., Bedair, S. M.

“…Strained layer superlattice (SLS) structures lattice matched to GaAs, such as InGaAs/GaAsP, use thin films to meet both the strain balance and critical layer…”
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Gallium nitride nanowires by maskless hot phosphoric wet etching by Bharrat, D., Hosalli, A. M., Van Den Broeck, D. M., Samberg, J. P., Bedair, S. M., El-Masry, N. A.

“…We demonstrate gallium nitride (GaN) nanowires formation by controlling the selective and anisotropic etching of N-polar GaN in hot phosphoric acid. Nanowires…”
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Growth and Characterization of In x Ga1−x As/GaAs1−y P y Strained-Layer Superlattices with High Values of y (~80%) by Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Bedair, S. M.

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Growth and Characterization of In^sub x^Ga^sub 1â 'x^As/GaAs^sub 1â 'y^P^sub y^ Strained-Layer Superlattices with High Values of y (~80%) by Samberg, J P, Carlin, C Z, Bradshaw, G K, Colter, P C, Bedair, S M

“…Issue Title: 2012 Electronic Materials Conference. Guest Editors: Joshua Caldwell, Rachel Goldman, Jamie Phillips, Oana Jurchescu, Shadi Shahedipour-Sandvik,…”
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Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells by Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., Bedair, S. M.

“…Multiple quantum wells (MQW) lattice matched to GaAs consisting of In 0.14 Ga 0.76 As wells balanced with GaAs 0.24 P 0.76 barriers have been used to extend…”
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The optimization of high indium and high phosphorus content InGaAs/GaAsP strained layer superlattices for use in multijunction solar cells by Carlin, C. Zachary, Bradshaw, G. K., Samberg, J. P., Colter, P. C., El-Masry, N. A., Bedair, S. M.

“…InGaAs/GaAsP strained layer superlattices (SLS) with high phosphorus and high indium content inserted into the intrinsic region of GaAs solar cells increases…”
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