Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: decoupling the influence of W dopant and O vacancies on the film properties

Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: decoupling the influence of W dopant and O vacancies on the film properties

Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O 2 -dilution fraction in the Ar sputtering gas. The W-doping level, and contributions o...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Vol. 122; no. 4; pp. 1 - 10
Main Authors: Samatov, Ivan G., Jeppesen, Bjarke R., Larsen, Arne Nylandsted, Ram, Sanjay K.
Format: Journal Article
Language:English
Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-04-2016
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Decoupling
Deposition
Dopants
Indium oxides
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Optical properties
Optimization
Physics
Physics and Astronomy
Processes
Sputtering
Surfaces and Interfaces
Thin Films
Vacancies
Indium Oxide
Carrier Concentration
Oxygen Vacancy
In2O3
Rutherford Backscattering Spectrometry
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Summary:Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O 2 -dilution fraction in the Ar sputtering gas. The W-doping level, and contributions of intrinsic oxygen vacancies and W dopant to the free carrier concentration were studied. Windows of optimum deposition conditions are demonstrated where amorphous and smooth-surfaced IWO films are obtained with low resistivity of 3.5 × 10 −4  Ω cm, high mobility of 45 cm 2  v −1  s −1 , and high optical transparency (visible and NIR transparencies of 83 and 80 %, respectively). The observed optoelectronic properties are discussed in light of the underlying electron transport mechanisms.
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ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-016-9983-0