Search Results - "Salvo, Barbara De"

Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting by Werner, Thilo, Vianello, Elisa, Bichler, Olivier, Garbin, Daniele, Cattaert, Daniel, Yvert, Blaise, De Salvo, Barbara, Perniola, Luca

“…In this paper, we present an alternative approach to perform spike sorting of complex brain signals based on spiking neural networks (SNN). The proposed…”
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Ferrocene and Porphyrin Monolayers on Si(100) Surfaces: Preparation and Effect of Linker Length on Electron Transfer by Huang, Kai, Duclairoir, Florence, Pro, Tiziana, Buckley, Julien, Marchand, Gilles, Martinez, Eugénie, Marchon, Jean‐Claude, De Salvo, Barbara, Delapierre, Guillaume, Vinet, Françoise

“…The missing link: Ferrocene and porphyrin monolayers are tethered on silicon surfaces with short (see picture, left) or long (right) linkers. Electron transfer…”
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Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS2-Based Conductive Bridge Memories by Palma, Giorgio, Vianello, Elisa, Molas, Gabriel, Cagli, Carlo, Longnos, Florian, Guy, Jérémy, Reyboz, Marina, Carabasse, Catherine, Bernard, Mathieu, Dahmani, Faiz, Bretegnier, Damien, Liebault, Jacques, Salvo, Barbara De

“…In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed…”
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Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine by Prasad, Arpan Suravi, Scherer, Moritz, Conti, Francesco, Rossi, Davide, Di Mauro, Alfio, Eggimann, Manuel, Gomez, Jorge Tomas, Li, Ziyun, Sarwar, Syed Shakib, Wang, Zhao, De Salvo, Barbara, Benini, Luca

“…Extended reality (XR) applications are machine learning (ML)-intensive, featuring deep neural networks (DNNs) with millions of weights, tightly latency-bound…”
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Exploring Memory-Oriented Design Optimization of Edge AI Hardware for Extended Reality Applications by Parmar, Vivek, Sarwar, Syed Shakib, Li, Ziyun, Lee, Hsien-Hsin Sean, Salvo, Barbara De, Suri, Manan

“…Low-power edge AI capabilities are essential for on-device extended reality (XR) applications to support the vision of the metaverse. In this work, we…”
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Thermally Constrained Codesign of Heterogeneous 3-D Integration of Compute-in-Memory, Digital ML Accelerator, and RISC-V Cores for Mixed ML and Non-ML Workloads by Luo, Yuan-Chun, Lu, Anni, Sharda, Janak, Scherer, Moritz, Tomas Gomez, Jorge, Shakib Sarwar, Syed, Li, Ziyun, Frederick Pinkham, Reid, De Salvo, Barbara, Yu, Shimeng

“…Heterogeneous 3-D (H3D) integration not only reduces the chip form factor and fabrication cost but also allows the merging of diverse compute paradigms that…”
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Narrow Heater Bottom Electrode‐Based Phase Change Memory as a Bidirectional Artificial Synapse by La Barbera, Selina, Ly, Denys R. B., Navarro, Gabriele, Castellani, Niccolò, Cueto, Olga, Bourgeois, Guillaume, De Salvo, Barbara, Nowak, Etienne, Querlioz, Damien, Vianello, Elisa

“…Phase change memory can provide a remarkable artificial synapse for neuromorphic systems, as it features excellent reliability and can be used as an analog…”
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Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices by Nowak, Etienne, Vianello, Elisa, Perniola, Luca, Bocquet, Marc, Molas, Gabriel, Kies, Rabah, Gely, Marc, Ghibaudo, Gerard, De Salvo, Barbara, Reimbold, Gilles, Boulanger, Fabien

“…An alternative solution to standard Flash memories is represented by nitride-trap memories as silicon--oxide--nitride--oxide--silicon (SONOS) or nitrided read…”
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Electrical Behavior of Phase-Change Memory Cells Based on GeTe by Perniola, Luca, Sousa, Veronique, Fantini, Andrea, Arbaoui, Edrisse, Bastard, Audrey, Armand, Marilyn, Fargeix, Alain, Jahan, Carine, Nodin, Jean-Francois, Persico, Alain, Blachier, Denis, Toffoli, Alain, Loubriat, Sebastien, Gourvest, Emanuel, Betti Beneventi, Giovanni, Feldis, Helene, Maitrejean, Sylvain, Lhostis, Sandrine, Roule, Anne, Cueto, Olga, Reimbold, Gilles, Poupinet, Ludovic, Billon, Thierry, De Salvo, Barbara, Bensahel, Daniel, Mazoyer, Pascale, Annunziata, Roberto, Zuliani, Paola, Boulanger, Fabien

“…In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based on a GeTe active material. GeTe PCMs show, first, extremely…”
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Siracusa: A Low-Power On-Sensor RISC-V SoC for Extended Reality Visual Processing in 16nm CMOS by Scherer, Moritz, Eggimann, Manuel, Mauro, Alfio Di, Prasad, Arpan Suravi, Conti, Francesco, Rossi, Davide, Gomez, Jorge Tomas, Li, Ziyun, Sarwar, Syed Shakib, Wang, Zhao, Salvo, Barbara De, Benini, Luca

“…Extended Reality (XR) has become increasingly popular in recent years, with applications in entertainment, education, healthcare, and more. However, mass…”
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Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs-Part II: Atomistic and Electrical Modeling by Vianello, E., Driussi, F., Blaise, P., Palestri, P., Esseni, D., Perniola, L., Molas, G., De Salvo, B., Selmi, L.

“…Based on the material analysis of the SiN layers presented in part I of this paper, we develop accurate atomistic and electrical models for the silicon nitride…”
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Three-dimensional Simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width by Fiori, G., Iannaccone, G., Molas, G., Barbara De Salvo

“…In this paper, we present an approach based on three-dimensional simulations for the investigation of the dependence of the programming window of…”
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Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories by Perniola, L., Bernardini, S., Iannaccone, G., Masson, P., Barbara De Salvo, Ghibaudo, G., Gerardi, C.

“…We propose an analytical model of the effects of a nonuniform distribution of trapped charge on the electrical characteristics and on the perspectives of 2-bit…”
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Corrigendum: Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting by Werner, Thilo, Vianello, Elisa, Bichler, Olivier, Garbin, Daniele, Cattaert, Daniel, Yvert, Blaise, De Salvo, Barbara, Perniola, Luca

“…[This corrects the article on p. 474 in vol. 10, PMID: 27857680.]…”
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Manipulation of periodic Coulomb blockade oscillations in ultra-scaled memories by single electron charging of silicon nanocrystal floating gates by Molas, G., Jehl, X., Sanquer, M., Barbara De Salvo, Lafond, D., Deleonibus, S.

“…Ultra-scaled silicon nanocrystal memories fabricated on a silicon-on-insulator substrate exhibit very periodic Coulomb blockade oscillations at 4.2 K. We…”
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Modeling of the programming window distribution in multinanocrystals memories by Perniola, L., Barbara De Salvo, Ghibaudo, G., Para, A.F., Pananakakis, G., Vidal, V., Baron, T., Lombardo, S.A.

“…In this paper, the impact of the Si nanocrystals technological fluctuations on the programming window dispersion of multi nanocrystals memory is thoroughly…”
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Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability by Barci, Marinela, Perniola, Luca, Molas, Gabriel, Cagli, Carlo, Vianello, Elisa, Bernard, Mathieu, Roule, Anne, Toffoli, Alain, Cluzel, Jacques, De Salvo, Barbara

“…In this paper, a detailed reliability analysis of metal-oxide conductive bridge memories (CBRAM) is presented. This paper mostly focuses on electrical…”
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Interface Engineering of Ag- -Based Conductive Bridge RAM for Reconfigurable Logic Applications by Palma, Giorgio, Vianello, Elisa, Thomas, Olivier, Suri, Manan, Onkaraiah, Santhosh, Toffoli, Alain, Carabasse, Catherine, Bernard, Mathieu, Roule, Anne, Pirrotta, Onofrio, Molas, Gabriel, De Salvo, Barbara

“…In this paper, we show performance and reliability improvement of Ag- GeS 2 -based conductive bridge RAM (CBRAM) devices by addition of a 2-nm-thick HfO 2…”
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Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media by Pro, T., Buckley, J., Huang, K., Calborean, A., Gely, M., Delapierre, G., Ghibaudo, G., Duclairoir, F., Marchon, J.-C., Jalaguier, E., Maldivi, P., De Salvo, B., Deleonibus, S.

“…In this paper, a physical investigation of hybrid molecular/Si memory capacitor structures is proposed, where redox-active molecules act as storage medium. Fc…”
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Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories by Molas, Gabriel, Bocquet, Marc, Buckley, Julien, Grampeix, Helen, Gély, Marc, Colonna, Jean-Philippe, Licitra, Christophe, Rochat, Névine, Veyront, Thomas, Garros, Xavier, Martin, François, Brianceau, Pierre, Vidal, Vincent, Bongiorno, Cosimo, Lombardo, Salvatore, Salvo, Barbara De, Deleonibus, Simon

“…In this paper, we evaluate the potentialities of hafnium-aluminates (HfAlO) materials as possible candidates for the interpoly dielectrics of future Flash…”
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