Search Results - "Salvestrini, Jean‐Paul"

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  1. 1

    Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy by Li, Xin, Sundaram, Suresh, El Gmili, Youssef, Ayari, Taha, Puybaret, Renaud, Patriarche, Gilles, Voss, Paul L, Salvestrini, Jean Paul, Ougazzaden, Abdallah

    Published in Crystal growth & design (01-06-2016)
    “…This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented…”
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    Journal Article
  2. 2

    Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study by Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

    “…•The drain current and transconductance of hBN/GaN/diamond HEMT are increased by 47 % compared to SiO2/GaN/sapphire HEMT.•The effect of hBN passivation layer…”
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    Journal Article
  3. 3

    Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE by Li, Xin, Jordan, Matthew B., Ayari, Taha, Sundaram, Suresh, El Gmili, Youssef, Alam, Saiful, Alam, Muhbub, Patriarche, Gilles, Voss, Paul L., Paul Salvestrini, Jean, Ougazzaden, Abdallah

    Published in Scientific reports (11-04-2017)
    “…Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress…”
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    Journal Article
  4. 4

    Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN by Ayari, Taha, Sundaram, Suresh, Li, Xin, El Gmili, Youssef, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

    Published in Applied physics letters (25-04-2016)
    “…Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer…”
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    Journal Article
  5. 5

    Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications by Ayari, Taha, Bishop, Chris, Jordan, Matthew B., Sundaram, Suresh, Li, Xin, Alam, Saiful, ElGmili, Youssef, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

    Published in Scientific reports (09-11-2017)
    “…The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to…”
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    Journal Article
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    Photovoltaic Concentration: Research and Development by El Himer, Sarah, El Ayane, Salima, El Yahyaoui, Sara, Salvestrini, Jean Paul, Ahaitouf, Ali

    Published in Energies (Basel) (01-11-2020)
    “…Concentrator Photovoltaic (CPV) technology, by using efficient optical elements, small sizes and high efficiency multi-junction solar cells, can be seen as a…”
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    Journal Article
  8. 8

    BAlN thin layers for deep UV applications by Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

    “…In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed…”
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    Journal Article
  9. 9

    High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells by El-Huni, Walid, Migan, Anne, Djebbour, Zakaria, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

    Published in Progress in photovoltaics (01-11-2016)
    “…In this work, we present a double‐junction solar cell with a crystalline silicon solar cell as a bottom junction and an indium gallium nitride‐based…”
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    Journal Article
  10. 10

    Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask by Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah

    Published in Applied physics letters (07-03-2016)
    “…We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned…”
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    Journal Article
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    Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride by Sundaram, Suresh, Li, Xin, Halfaya, Yacine, Ayari, Taha, Patriarche, Gilles, Bishop, Christopher, Alam, Saiful, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

    Published in Advanced materials interfaces (01-08-2019)
    “…Hexagonal boron nitride (h‐BN) is a promising 2D template that decouples substrate effects from the layer above it by van der Waals epitaxy, because there are…”
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    Journal Article
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    Relevant Biomarkers in Medical Practices: An Analysis of the Needs Addressed by an International Survey by Abensur Vuillaume, Laure, Leichle, Thierry, Le Borgne, Pierrick, Grajoszex, Mathieu, Goetz, Christophe, Voss, Paul L, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, d'Ortho, Marie-Pia

    Published in Journal of personalized medicine (14-01-2022)
    “…(1) Backround: Technological advances should foster gains in physicians' efficiency. For example, a reduction of the medical decision time can be enabled by…”
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    Journal Article
  16. 16

    Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells by Alam, Saiful, Sundaram, Suresh, Haas, Helge, Li, Xin, El Gmili, Youssef, Jamroz, Miryam E., Robin, Ivan C., Voss, Paul L., Salvestrini, JeanPaul, Ougazzaden, Abdallah

    “…We report on the optimization of p‐GaN layers for high indium (In) content InGaN applications by optimizing temperature, precursor CP2Mg flow rate and III/V…”
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    Journal Article
  17. 17

    Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators by Salvestrini, Jean-Paul, Guilbert, Laurent, Fontana, Marc, Abarkan, Mustapha, Gille, Stéphane

    Published in Journal of lightwave technology (15-05-2011)
    “…The drift issue induces slow drifting of the optimum operating point for high efficiency or large nonlinearities in analog optical links, and requires complex…”
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    Journal Article
  18. 18

    Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor by Sama, Nossikpendou Yves, Bouhnane, Hafsa, Gautier, Simon, Ahaitouf, Ali, Matray, Jean Michel, Paul Salvestrini, Jean, Ougazzaden, Abdallah, Hathcock, Andrew, He, Dongyuan, Phuong Vuong, Thi Quynh, Karrakchou, Soufiane, Ayari, Taha, Mballo, Adama, Bishop, Chris, Halfaya, Yacine

    Published in 2019 IEEE SENSORS (01-10-2019)
    “…In this work, an all-solid-state electrolyte-insulator-semiconductor (EIS) device is developed for pH sensing performance evaluation of insulating materials…”
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    Conference Proceeding
  19. 19

    N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell by Belghouthi, Rabeb, Rached, Amani, Aillerie, Michel, Mohammed, Ramdani, Gujrati, Rajat, Salvestrini, Jean-Paul

    Published in Journal of electronic materials (01-11-2023)
    “…The purpose of this paper is to investigate the N-face InGaN semi-bulk as a solution to achieve a high-efficiency solar cell based on III-nitride materials,…”
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    Journal Article
  20. 20

    Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination by Tijent, Fatima Z, Bouzourâa, Montassar B, Ottapilakkal, Vishnu, Perepeliuc, Andre, Gujrati, Rajat, Vuong, Phuong, Sundaram, Suresh, Faqir, Mustapha, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

    “…Hexagonal boron nitride (h-BN) bubbles are of significant interest to micro-scale hydrogen storage thanks to their ability to confine hydrogen gas molecules…”
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    Journal Article