Search Results - "Salvestrini, J. P."

A cost-effective technology to improve power performance of nanoribbons GaN HEMTs by Soltani, A., Benbakhti, B., Gerbedoen, J.-C., Khediri, A., Maher, H., Salvestrini, J.-P., Ougazzaden, A., Bourzgui, N. E., Barkad, H. A.

“…A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This process uses…”
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications by Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

“…Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN…”
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MOVPE grown periodic AlN/BAlN heterostructure with high boron content by Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

“…Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been…”
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Interface state effects in GaN Schottky diodes by Ahaitouf, A., Srour, H., Hamady, S. Ould Saad, Fressengeas, N., Ougazzaden, A., Salvestrini, J.P.

“…Current voltage (I-V) and capacitance voltage (C-V) measurements have been performed versus temperature on GaN Schottky diodes. The results show an increase of…”
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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm by Li, X., Sundaram, S., Disseix, P., Le Gac, G., Bouchoule, S., Patriarche, G., Réveret, F., Leymarie, J., El Gmili, Y., Moudakir, T., Genty, F., Salvestrini, J-P., Dupuis, R. D., Voss, P. L., Ougazzaden, A.

“…We report on the growth of Al sub(0.57)Ga sub(0.43)N/Al sub(0.38)Ga sub(0.63)N MQWs grown on a relaxed Al sub(0.58)Ga sub(0.42)N buffer on AlN template by…”
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm by Li, X, Le Gac, G, Bouchoule, S, El Gmili, Y, Patriarche, G, Sundaram, S, Disseix, P, Reveret, F, Leymarie, J, Streque, J, Genty, F, Salvestrini, J-P, Dupuis, R D, Li, X-H, Voss, P L, Ougazzaden, A

“…10-period Al sub(0.57)Ga sub(0.43)N/Al sub(0.38)Ga sub(0.62)N multi-quantum wells (MQWs) were grown on a relaxed Al sub(0.58)Ga sub(0.42)N buffer on AlN…”
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Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion by Fontana, M.D., Abarkan, M., Salvestrini, J.P.

“…•We model the λ-dispersion of the EO and SHG coefficients.•Solely the measurement of the coefficient at one wavelength is required.•We report the calculated…”
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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates by El Gmili, Y., Bonanno, P. L., Sundaram, S., Li, X., Puybaret, R., Patriarche, G., Pradalier, C., Decobert, J., Voss, P. L., Salvestrini, J-P., Ougazzaden, A.

“…In this paper, we studied the effect of temperature and mask margin size on optical emission and growth rate enhancement (GRE) of InGaN grown by metal organic…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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Photoinduced doping in hexagonal boron nitride by Perepeliuc, A., Gujrati, R., Srivastava, A., Vuong, P., Ottapilakkal, V., Voss, P. L., Sundaram, S., Salvestrini, J. P., Ougazzaden, A.

“…Hexagonal boron nitride is shown to exhibit very significant persistent photoconductivity after UV illumination. This behavior can be initiated by sub-bandgap…”
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Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals by Abarkan, M., Aillerie, M., Salvestrini, J. P., Fontana, M. D., Kokanyan, E. P.

“…We report the optical and dielectric properties in hafnium (Hf)-doped lithium niobate (LN) crystals. We investigated samples of congruent composition with…”
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Single crystalline boron rich B(Al)N alloys grown by MOVPE by Vuong, P., Mballo, A., Sundaram, S., Patriarche, G., Halfaya, Y., Karrakchou, S., Srivastava, A., Krishnan, K., Sama, N. Y., Ayari, T., Gautier, S., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.

“…Boron rich BAlN alloys have been grown on 2-inch sapphire substrates by Metal-Organic Vapor Phase Epitaxy. The surface morphology of BAlN alloys exhibits a…”
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Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal by Abarkan, M., Salvestrini, J.P., Fontana, M.D., Cuniot-Ponsard, M.

“…We report the dependence of the high and low-frequency values of the linear electro-optic (EO) coefficient r c =r 33 -(n o /n e ) 3 r 13 of Sr 0.6 Ba 0.4 Nb 2…”
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Bandgap energy bowing parameter of strained and relaxed InGaN layers by Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

“…This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal…”
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Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals by ABARKAN, M, SALVESTRINI, J. P, FONTANA, M. D, AILLERIE, M

“…The frequency dependence of electro-optic co- efficients in congruent and stoichiometric LiNbO3 , LiTaO3 , β-BaB2O4 and KTiOPO4 was determined and compared to…”
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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors by Bishop, C., Salvestrini, J. P., Halfaya, Y., Sundaram, S., El Gmili, Y., Pradere, L., Marteau, J. Y., Assouar, M. B., Voss, P. L., Ougazzaden, A.

“…We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with…”
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High-frequency response and wavelength dispersion of the linear electro-optic effect in PZN-PT (88/12) single crystal by SALVESTRINI, J. P, LEBRUN, L, ABARKAN, M, SEBALD, G, WANG, M, GUYOMAR, D

“…We have characterized the wavelength dispersion of the high- and low-frequency values of the linear electro-optic coefficient r c = r 33--(n o/n e) r 13 of…”
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Comparative study of nonlinear optical crystals for electro-optic Q-switching of laser resonators by Salvestrini, J.P., Abarkan, M., Fontana, M.D.

“…The development of Pockels cells is closely related to the choice of the crystals which are involved in this kind of device. These crystals must satisfy…”
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Investigations of LiNbO3 and LiTaO3 Single Crystals for Pyroelectric Applications in the Wide Temperature Range by Bravina, S. L., Morozovsky, N. V., Morozovska, A. N., Gille, S., Salvestrini, J.-P., Fontana, M. D.

“…We present temperature dependences of pyroelectric response in LiNbO 3 and LiTaO 3 single crystals in operating condition as pyroelectric detectors and in the…”
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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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