Search Results - "Salupo, Carl S."

2000 V 6H-SiC p - n junction diodes grown by chemical vapor deposition by Neudeck, Philip G., Larkin, David J., Powell, J. Anthony, Matus, Lawrence G., Salupo, Carl S.

“…In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide diodes to demonstrate rectification to reverse…”
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Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates by Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

“…3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side…”
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Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition by Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

“…The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n junction diodes are reported. These diodes, which were…”
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