Search Results - "Salh, R."

Utilizing the temporal superresolution approach in an optical parametric synthesizer to generate multi-TW sub-4-fs light pulses by Muschet, A A, De Andres, A, Fischer, P, Salh, R, Veisz, L

“…The Fourier-transform limit achieved by a linear spectral phase is the typical optimum by the generation of ultrashort light pulses. It provides the highest…”
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Luminescent properties of GaN films grown on porous silicon substrate by Matoussi, A., Ben Nasr, F., Boufaden, T., Salh, R., Fakhfakh, Z., Guermazi, S., ElJani, B., Fitting, H.-J.

“…GaN films have been grown on porous silicon at high temperatures (800–1050 °C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were…”
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Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate by Matoussi, A., Ben Nasr, F., Salh, R., Boufaden, T., Guermazi, S., Fitting, H.-J., Eljani, B., Fakhfakh, Z.

“…In the present paper, we report results of GaN layers grown at 800 °C by metal organic vapour phase epitaxy (MOVPE) on porous silicon (PS) formed on Si(100)…”
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Ion implantation, luminescence, and cluster growth in silica layers by Salh, Roushdey, Kourkoutis, L., Zamoryanskaya, M.V., Schmidt, B., Fitting, H.-J.

“…To activate silica optically our investigations are extended to ion implantation, mainly to overstoichiometric injection or isoelectronic substitution of the…”
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Thermal decomposition and new luminescence bands in wet, dry, and additional oxygen implanted silica layers by Fitting, H.-J., Salh, Roushdey, Schmidt, B.

“…Wet and dry silica oxide layers have been treated thermally up to Ta=1300°C and were investigated by cathodoluminescence (CL) spectroscopy. Whereas the dry…”
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Cathodoluminescence of wet, dry, and hydrogen-implanted silica films by Fitting, H.-J., Ziems, T., Salh, Roushdey, Zamoryanskaya, M.V., Kolesnikova, K.V., Schmidt, B., Czarnowski, A. von

“…The main luminescent centers in SiO 2 films are the red luminescence R (1.85 eV) of the non-bridging oxygen hole center (NBOHC), a blue B (2.7 eV) band of the…”
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Multiplet luminescence of sulfur implanted silica - SiO2:S by Salh, Roushdey, Schmidt, B., Fitting, H.-J.

“…Thermally wet oxidized SiO2 layers of 500 nm thickness have been implanted by sulfur ions of energy 150 keV and a dose 5 × 1016 ions/cm2 leading to an atomic…”
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Multimodal luminescence spectra of ion-implanted silica by Fitting, H.-J., Salh, Roushdey, Barfels, T., Schmidt, B.

“…Thermally oxidized SiO2 layers have been implanted by oxygen and sulfur ions up to an atomic dopant fraction of about 4 at%. The cathodoluminescence spectra of…”
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