Search Results - "Sakuraba, Masao"

Computational Efficiency of a Modular Reservoir Network for Image Recognition by Dai, Yifan, Yamamoto, Hideaki, Sakuraba, Masao, Sato, Shigeo

“…Liquid state machine (LSM) is a type of recurrent spiking network with a strong relationship to neurophysiology and has achieved great success in time series…”
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Amphiphobic Septa Enhance the Mechanical Stability of Free-Standing Bilayer Lipid Membranes by Yamaura, Daichi, Tadaki, Daisuke, Araki, Shun, Yoshida, Miyu, Arata, Kohei, Ohori, Takeshi, Ishibashi, Ken-ichi, Kato, Miki, Ma, Teng, Miyata, Ryusuke, Yamamoto, Hideaki, Tero, Ryugo, Sakuraba, Masao, Ogino, Toshio, Niwano, Michio, Hirano-Iwata, Ayumi

“…Artificial bilayer lipid membranes (BLMs) provide well-defined systems for investigating the fundamental properties of membrane proteins, including ion…”
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Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating by Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

“…By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si1−xGex alloy…”
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Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation by Sasaki, Shogo, Sakuraba, Masao, Akima, Hisanao, Sato, Shigeo

“…Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5at% by surface reaction of SiH4 and CH4 under low-energy Ar…”
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Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating by Sakuraba, Masao, Sugawara, Katsutoshi, Nosaka, Takayuki, Akima, Hisanao, Sato, Shigeo

“…The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D)…”
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Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating by Ueno, Naofumi, Sakuraba, Masao, Osakabe, Yoshihiro, Akima, Hisanao, Sato, Shigeo

“…By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100°C during plasma exposure without substrate…”
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Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode by Kawashima, Tomoyuki, Sakuraba, Masao, Murota, Junichi

“…Nitrogen atomic-layer (N AL) doping effects upon hole tunneling characteristics of double 4nm-thick Si barriers in the strained Si1−xGex/Si(100) hole resonant…”
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Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating by Abe, Yusuke, Sakuraba, Masao, Murota, Junichi

“…Characteristics of B-doped Si epitaxial growth on Si(100) by using electron-cyclotron-resonance Ar plasma enhanced chemical vapor deposition without substrate…”
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Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating by Motegi, Koya, Ueno, Naofumi, Sakuraba, Masao, Osakabe, Yoshihiro, Akima, Hisanao, Sato, Shigeo

“…In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition…”
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Behavior of N atoms after thermal nitridation of Si1−xGex surface by Kawashima, Tomoyuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

“…Behavior of N atoms after thermal nitridation of Si1−xGex (100) surface in NH3 atmosphere at 400°C was investigated. X-ray photoelectron spectroscopy (XPS)…”
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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD by Nosaka, Takayuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

“…Heavy B atomic-layer doping in Si epitaxial growth on Si(100) by electron-cyclotron-resonance (ECR) Ar plasma enhanced chemical vapor deposition (CVD) has been…”
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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD by Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi

“…By electron-cyclotron resonance Ar plasma enhanced chemical-vapor deposition, Si and Ge epitaxial growth on Si(100) were achieved without substrate heating…”
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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition by Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

“…Electrical characteristics of B atomic-layer doped Si epitaxial films on Si(1 0 0) formed by B atomic-layer formation on Si(1 0 0) at 180 °C and subsequent…”
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Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system by Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

“…Heavy B atomic-layer doping is performed by B atomic-layer formation on Si(1 0 0) using B 2H 6 and subsequent Si capping layer deposition using SiH 4. By B 2H…”
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Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD by Kawashima, Tomoyuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Fabrication of high-Ge-fraction strained Si1−Ge /Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers by Takahashi, Kuniaki, Sakuraba, Masao, Murota, Junichi

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Strain relaxation by stripe patterning in Si/Si1-xGex/Si(100) heterostructures by UHM, Jangwoong, SAKURABA, Masao, MUROTA, Junichi

“…The relaxation of strain in Si/Si1-xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering…”
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Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0) by AKIYAMA, Nao, SAKURABA, Masao, TILLACK, Bernd, MUROTA, Junichi

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Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system by Yokogawa, Takashi, Ishibashi, Kiyohisa, Sakuraba, Masao, Murota, Junichi, Inokuchi, Yasuhiro, Kunii, Yasuo, Kurokawa, Harushige

“…Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was…”
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Atomic-layer doping in Si by alternately supplied NH3 and SiH4 by Jeong, Youngcheon, Sakuraba, Masao, Murota, Junichi

“…Low-temperature Si growth on the atomic-layer order nitrided Si(100) surface with N amount of 1–6×1014 cm−2 formed by NH3 reaction at 400 °C were investigated…”
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