Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

•Lateral growth during bulk crystallization of GaN by HVPE was reduced.•Mo parts were introduced into the crystallization zone of the HVPE reactor.•The morphology and high structural quality of HVPE-GaN remained unchanged.•Thermodynamic calculations were applied to explained the lateral growth reduc...

Full description

Saved in:

Bibliographic Details
Published in:	Journal of crystal growth Vol. 556; p. 125986
Main Authors:	Sochacki, Tomasz, Sakowski, Slawomir, Kempisty, Pawel, Amilusik, Mikolaj, Jaroszynska, Arianna, Iwinska, Malgorzata, Bockowski, Michal
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 15-02-2021 Elsevier BV
Subjects:	A1. Computer simulation A2. Growth from vapor A3. Chloride vapor phase epitaxy A3. Vapor phase epitaxy B1. Nitrides B2: Semiconducting III-V materials Boules Computational fluid dynamics Configurations Crystal growth Crystallization Molybdenum Reagents Supersaturation A3. Chloride vapor phase epitaxy A1. Computer simulation A3. Vapor phase epitaxy B1. Nitrides B2: Semiconducting III-V materials A2. Growth from vapor
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	•Lateral growth during bulk crystallization of GaN by HVPE was reduced.•Mo parts were introduced into the crystallization zone of the HVPE reactor.•The morphology and high structural quality of HVPE-GaN remained unchanged.•Thermodynamic calculations were applied to explained the lateral growth reduction.•The supersaturation was locally changed close to the edge of the crystal. Different configurations of the growth zone were examined for crystallization of HVPE-GaN. The motivation for this work was to suppress growth in the lateral directions which appears on the seed edges during crystallization in the [0 0 0 1] direction. This phenomenon is a significant problem for growing thick GaN boules. Changes in the configuration involved placing molybdenum elements close to the growing crystal. Such a solution allowed to decrease the area of material deposited at the edges. The reason for this was examined with Computational Fluid Dynamics simulations. Distributions of reagents over the seed and the resulting supersaturation were examined. The value of the latter was lower near the edges of the crystal where the molybdenum elements were placed.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2020.125986