Search Results - "Sakhonenkov, S"

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN by Filatova, E. O., Konashuk, A. S., Sakhonenkov, S. S., Sokolov, A. A., Afanas’ev, V. V.

“…Interface of TiN electrode with γ-Al 2 O 3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy…”
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Relationship between Ta Oxidation State and Its Local Atomic Coordination Symmetry in a Wide Range of Oxygen Nonstoichiometry Extent of TaO x by Kasatikov, S, Filatova, E, Sakhonenkov, S, Konashuk, A, Makarova, A

“…Evolution of electronic and atomic structure of amorphous Ta2O5 during sputtering by Ar+ ions was investigated by means of X-ray photoelectron spectroscopy…”
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Study of the Effect of Si and Be Barrier Layers on Crystallization of Cr/Sc Multilayer X-ray Mirror by Solomonov, A. V., Sakhonenkov, S. S., Filatova, E. O.

“…The influence of Si and Be barrier layers on the mixing of thin layers of multilayer X-ray mirrors based on Cr and Sc in a wide temperature range has been…”
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Chemical interaction and electronic structure in a compositionally complex alloy: A case study by means of X-ray absorption and X-ray photoelectron spectroscopy by Kasatikov, S., Fantin, A., Manzoni, A.M., Sakhonenkov, S., Makarova, A., Smirnov, D., Filatova, E.O., Schumacher, G.

“…Chemical interaction and changes in local electronic structure of Cr, Fe, Co, Ni and Cu transition metals (TMs) upon formation of an Al8Co17Cr17Cu8Fe17Ni33…”
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Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass by Konashuk, A., Filatova, E., Sakhonenkov, S., Afanas'ev, V.V.

“…Impact of deposition technique on the chemical bonding in low-κ organosilicate glass (OSG) films and on porogen residues was studied using near edge X-ray…”
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Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer by Filatova, Elena O, Sakhonenkov, Sergei S, Konashuk, Aleksei S, Kasatikov, Sergey A, Afanas’ev, Valeri V

“…Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5–3 nm) alumina interlayer was…”
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Study of Interfaces of Mo/Be Multilayer Mirrors Using X‑ray Photoelectron Spectroscopy by Kasatikov, Sergey A, Filatova, Elena O, Sakhonenkov, Sergei S, Gaisin, Aidar U, Polkovnikov, Vladimir N, Smertin, Ruslan M

“…In the present work, formation of interfaces in the multilayer periodic Mo/Be mirror was studied using X-ray photoelectron spectroscopy. Chemical composition…”
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Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2 by Filatova, Elena O, Konashuk, Aleksei S, Sakhonenkov, Sergei S, Gaisin, Aidar U, Kolomiiets, Nadiia M, Afanas’ev, Valeri V, Dekkers, Harold F. W

“…By use of a combination of electrical measurements and internal photoemission interface barrier characterization, the effective workfunction (EWF) changes of…”
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Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes by Konashuk, Aleksei S, Filatova, Elena O, Sakhonenkov, Sergei S, Kolomiiets, Nadiia M, Afanas’ev, Valeri V

“…The physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by…”
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Effect of Insertion of B4C at the Interface Mo/Be Depending on the Film Order by Filatova, Elena O, Sakhonenkov, Sergei S, Kasatikov, Sergey A, Gaisin, Aidar U, Fateeva, Elizaveta S, Smertin, Ruslan M, Polkovnikov, Vladimir N

“…In the present work, the formation of an interface region in the multilayer periodic Mo/Be mirrors was studied using X-ray photoelectron spectroscopy. The…”
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Refined thermal stability of Cr/Sc multilayers with Si(Be) barrier layers by Filatova, E.O., Sakhonenkov, S.S., Solomonov, A.V., Smertin, R.M., Polkovnikov, V.N.

“…[Display omitted] •Annealing led to full mixing of layers in Cr/Sc at 450°C.•Texturing with Sc [001] preferred orientation is occurred in Cr/Sc at…”
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Increasing the thermal stability of a Cr/Sc multilayer by nitriding by Filatova, E.O., Sakhonenkov, S.S., Solomonov, A.V., Smertin, R.M., Polkovnikov, V.N.

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Effect of annealing on layer intermixing in nanoscale Cr/Ti multilayers depending on the period value by Filatova, E.O., Karataev, A.V., Gaisin, A.U., Sakhonenkov, S.S., Polkovnikov, V.N., Chkhalo, N.I.

“…[Display omitted] •Annealing increases mixing of the layers with formation of TiCrx.•Contribution of TiCrx increases significantly as the period…”
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Layer intermixing in ultrathin Cr/Be layered system and impact of barrier layers on interface region by Sakhonenkov, S.S., Filatova, E.O., Kasatikov, S.A., Fateeva, E.S., Pleshkov, R.S., Polkovnikov, V.N.

“…[Display omitted] •CrBe2 and CrBe12 are formed at the Cr-on-Be and Be-on-Cr interfaces, respectively.•In ultrathin Cr/Be layered system there is complete…”
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Effect of B4C barrier layer on layer intermixing in nanoscale W/Be multilayers before and after annealing by Sakhonenkov, Sergei S., Filatova, Elena O.

“…[Display omitted] •Borides/carbides of W are formed in W/Be with an ultrathin B4C layer.•Be2C forms when B4C deposited on Be.•Utilizing ultrathin B4C layer…”
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Interface formation between Be and W layers depending on its thickness and ordering by Sakhonenkov, Sergei S., Filatova, Elena O.

“…[Display omitted] •WBe2 and WBe12 are formed at the W-on-Be and Be-on-W interfaces, respectively.•WBe2 thickness does not depend on the W top layer…”
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Nanoscale W/Be multilayers: Intermixing during magnetron sputtering deposition and effect of heat treatment by Sakhonenkov, Sergei S., Filatova, Elena O.

“…[Display omitted] •WBe12 and WBe2 are formed in W/Be multilayers systems during magnetron sputtering.•Stoichiometry of beryllide is mainly determined by…”
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Re-distribution of oxygen at the interface between γ-Al 2 O 3 and TiN by Filatova, E O, Konashuk, A S, Sakhonenkov, S S, Sokolov, A A, Afanas'ev, V V

“…Interface of TiN electrode with γ-Al O layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and…”
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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf x Si1–x O2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor by Konashuk, Aleksei S., Filatova, Elena O., Bugaev, Aleksandr V., Sakhonenkov, Sergei S., Danilov, Denis V.

“…Characterization of the composition and extension of the SiO2/HfO2 interface in the model systems Si-sub./SiO2 (7.5 nm)/FE:HfO2 (9.5 nm)/TiN (9 nm) for…”
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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf x Si 1– x O 2 at the SiO 2 /FE:HfO 2 Interface in a Ferroelectric Field-Effect Transistor by Konashuk, Aleksei S., Filatova, Elena O., Bugaev, Aleksandr V., Sakhonenkov, Sergei S., Danilov, Denis V.

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