Search Results - "Sakharov, A V"

Heat-Flux Measurement by Sensors Based on Anisotropic Thermoelements in a Gas-Dynamics Experiment Shock Tubes by Popov, P. A., Sakharov, V. A., Lapushkina, T. A., Poniaev, S. A., Monakhov, N. A.

“…We present the results of measuring the heat flux using sensors based on anisotropic thermoelements and a thin-film resistance sensor for cases of shock-wave…”
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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells by Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…The optical properties of a structure with a periodic system of 100 InGaN quantum wells separated by nontunneling GaN barriers are investigated at room…”
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The physiological reaction of Siberian hamsters ( Phodopus sungorus , Cricetidae) to chemical signals of perspective mating partners before and during courtship by Kondratyuk, E Yu, Zadubrovskiy, P A, Zadubrovskaya, I V, Sakharov, A V

“…In this investigation we assessed the physiological reaction of hamsters in response to chemical signals from potential sexual partners, and also after a…”
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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells by Arteev, D. S., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Zakheim, D. A., Tsatsulnikov, A. F.

“…The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation…”
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Stress-dislocation management in MOVPE of GaN on SiC wafers by Rudinsky, M. E., Yakovlev, E. V., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Velikovskiy, L. E.

“…A combined experimental and modeling study of stress and curvature evolution during (0001) GaN growth on (0001) 4H‐SiC wafers is presented. It is shown that…”
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GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography by Rodin, S. N., Lundin, W. V., Tsatsulnikov, A. F., Sakharov, A. V., Usov, S. O., Mitrofanov, M. I., Levitskii, I. V., Evtikhiev, V. P., Kaliteevski, M. A.

“…A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and…”
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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam by Sakharov, A. V., Usov, S. O., Rodin, S. N., Lundin, W. V., Tsatsulnikov, A. F., Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Kaliteevskii, M. A., Evtikhiev, V. P.

“…The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show…”
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Selective Epitaxy of Submicron GaN Structures by Lundin, W. V., Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Evtikhiev, V. P.

“…The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have…”
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Study of the Effect of Electron Cooling: Overview of the Current State by Bezverkhnii, N. O., Bobashev, S. V., Kolychev, A. V., Monakhov, N. A., Ponyaev, S. A., Sakharov, V. A.

“…Investigation results of the effect of electron cooling are considered. The current state-of-the-art is analyzed. The possibilities are discussed for the…”
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Double Probe Measuring Technique in an Electrode Discharge with Varying Parameters by Baryshnikov, A. S., Basargin, I. V., Bezverkhnii, N. O., Bobashev, S. V., Monakhov, N. A., Popov, P. A., Sakharov, V. A., Chistyakova, M. V.

“…We propose a method for correcting the double probe signal during measurements in plasma of an electrode discharge varying with time. The technique has been…”
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Change in the Space Potential in Glow Discharge Plasma during the Motion of the Shock Wave by Baryshnikov, A. S., Basargin, I. V., Bezverkhnii, N. O., Bobashev, S. V., Monakhov, N. A., Popov, P. A., Sakharov, V. A., Chistyakova, M. V.

“…It has been established in experiments on the interaction of a shock wave with a glow discharge that the motion of the shock wave is accompanied by an increase…”
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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs by Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Zakheim, D. A., Usov, S. O., Tsatsulnikov, A. F., Yagovkina, M. A., Sim, P. E., Demchenko, O. I., Kurbanova, N. Y., Velikovskiy, L. E.

“…InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and…”
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Selection of machine tool equipment when implementing modular technology by Sakharov, A. V.

“…This article is about choosing the right machine tool equipment when you're introducing modular technology into engineering production. The objective was to…”
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Dynamics of a point in the axisymmetric gravitational potential of a massive fixed ring and center by Sakharov, A. V.

“…We consider the problem of three-dimensional motion of a passively gravitating point in the potential created by a homogeneous thin fixed ring and a massive…”
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(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell by Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…We study the formation of a superradiant optical mode in the room temperature reflection spectra from resonant Bragg structures (RBSs) composed of single and…”
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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure by Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…We experimentally demonstrate the formation of a superradiant optical mode in the room-temperature reflection spectra from a resonant Bragg structure composed…”
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Critical spatial disorder in InGaN resonant Bragg structures by Ivanov, A. A., Chaldyshev, V. V., Ushanov, V. I., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…We study a disorder-induced transformation of the resonant optical reflection from a nearly periodic system of quasi-2D excitons in the InGaN quantum wells…”
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Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes by Lebedev, A. A., Sakharov, A. V., Kozlovski, V. V., Malevsky, D. A., Nikolaev, A. E., Levinshtein, M. E.

“…The carrier removal rates during proton and electron irradiations of n -type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was…”
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Stress Analysis of GaN-Based Heterostructures on Silicon Substrates by Arteev, D. S., Sakharov, A. V., Zavarin, E. E., Nikolaev, A. E., Yagovkina, M. A., Tsatsulnikov, A. F.

“…Elastic stresses in AlN layers on silicon substrates of different thickness, as well as in multilayer (Al, Ga)N structures grown on AlN/Si templates, were…”
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Comparison of Mass Spectral Characteristics Using Statistical Analysis Methods for the Case of Electron Ionization of Organic Molecules at Different Electron Energies by Silkin, S. V., Sakharov, A. V., Pekov, S. I., Eliferov, V. A., Tkachenko, V. G., Kolesnik, D. V., Nikolaev, E. N., Popov, I. A.

“…The sensitivity and accuracy of identifying volatile organic compounds using mass spectrometric gas analyzers operation in the electron ionization mode can be…”
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