Search Results - "Sakamoto, Tsunenori"

Which surfactant shall we choose for the heteroepitaxy of Ge/Si(001) ? -Bi as a surfactant with small self-incorporation by SAKAMOTO, K, KYOYA, K, MIKI, K, MATSUHATA, H, SAKAMOTO, T

“…While the effectiveness of surfactants in Si/Ge heteroepitaxial growth has recently been reported, their disadvantages of self-incorporation and poor surface…”
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Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films by Ando, Atsushi, Hasunuma, Ryu, Maeda, Tatsuro, Sakamoto, Kunihiro, Miki, Kazushi, Nishioka, Yasushiro, Sakamoto, Tsunenori

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Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant by Sakamoto, Kunihiro, Matsuhata, Hirofumi, Kyoya, Ken'ichi, Kazushi Miki, Kazushi Miki, Tsunenori Sakamoto, Tsunenori Sakamoto

“…Fabrication of atomically abrupt Si/Ge/Si heterointerfaces was demonstrated using Bi as a surfactant. Cross-sectional high-resolution transmission electron…”
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Spatially controlled formation of an atomically flat Si(001) surface by annealing with a direct current in an ultrahigh vacuum by ANDO, A, SAKAMOTO, K, MIKI, K, MATSUMOTO, K, SAKAMOTO, T

“…We propose a new technique for the spatially controlled formation of an atomically flat large Si(001) surface obtained by annealing with a direct current in an…”
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Ge epitaxial overlayers on Si(001) studied by surface-sensitive X-ray absorption fine structure : evidence for strain-induced surface rearrangement by OYANAGI, H, SAKAMOTO, K, SHIODA, R, SAKAMOTO, T

“…The structure of Ge epitaxial overlayers on well-oriented Si(001) ( Ge n /Si(001), n<7) has been studied by the surface-sensitive X-ray absorption fine…”
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V-shaped gate high electron mobility transistor (VHEMT) by ISHII, M, MATSUMOTO, K, MOROZUMI, H, SUGIYAMA, Y, SAKAMOTO, T

“…V-shaped gate high electron mobility transistor (VHEMT) is proposed and demonstrated for the first time. The V-shaped trench fabricated by an anisotropic…”
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Heterointerfaces in Strained-Layer Superlattices Studied by Surface-Sensitive XAFS by Oyanagi, Hiroyuki, Sakamoto, Kunihiro, Sakamoto, Tsunenori

“…The effect of heterointerface to the electronic sates of GeSi strained-layer superlattices (SLS's) with a very short period has been studied by…”
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Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface by Ando, Atsushi, Sakamoto, Kunihiro, Miki, Kazushi, Matsumoto, Kazuhiko, Sakamoto, Tsunenori

“…We have demonstrated the characterizations of the morphologies and local electrical properties of the SiO 2 /Si(001) structure which was formed by oxidation of…”
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Structural model for the negative electron affinity surface of O/Cs/Si(001)2×1 by ABUKAWA, T, KONO, S, SAKAMOTO, T

“…A wide-terrace single-domain Si(001)2×1 surface has been used to prepare a single-domain Si(001)2×1-Cs surface and a negative electron affinity (NEA) surface…”
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Reflection high-energy electron diffraction intensity oscillations during GexSi1-x MBE growth on Si(001) substrates by SAKAMOTO, K, SAKAMOTO, T, NAGAO, S, HASHIGUCHI, G, KUNIYOSHI, K, BANDO, Y

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Phase-locked epitaxy using RHEED intensity oscillation by SAKAMOTO, T, FUNABASHI, H, OHTA, K, NAKAGAWA, T, KAWAI, N. J, KOJIMA, T

“…Long lasting RHEED oscillations during MBE growth of GaAs and Al x Ga 1- x As are observed. Using these oscillations, accurate measurements of GaAs, Al x Ga 1-…”
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Ge Distribution in Ge n /Si m Strained-Layer Superlattices by Miki, Kazushi, Unoki, Shigeyuki, Matsuhata, Hirofumi, Kunihiro Sakamoto, Kunihiro Sakamoto, Tsunenori Sakamoto, Tsunenori Sakamoto

“…Ge n /Si m strained-layer superlattices (SLSs) grown by molecular beam epitaxy were investigated by the X-ray diffraction method. The diffraction intensities…”
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Electronic structures of the single-domain Si(001)2×1 and 2×8 surfaces by ENTA, Y, SUZUKI, S, KONO, S, SAKAMOTO, T

“…Wide-terrace single-domain Si(001)2×1 and 2×8 surfaces have been obtained on well-oriented Si(001) wafers. Angle-resolved ultraviolet photoelectron spectra…”
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Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system by KOJIMA, T, KAWAI, N. J, NAKAGAWA, T, OHTA, K, SAKAMOTO, T, KAWASHIMA, M

“…Reflection high-energy electron diffraction (RHEED) intensity oscillation during sublimation of GaAs is observed at high substrate temperatures above 690 °C…”
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Observation of direct band gap properties in GenSim strained-layer superlattices by OKUMURA, H, MIKI, K, MISAWA, S, SAKAMOTO, K, SAKAMOTO, T, YOSHIDA, S

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Scanning tunneling microscopy of anisotropic monatomic steps on a vicinal Si(001)-2×1 surface by MIKI, K, TOKUMOTO, H, SAKAMOTO, T, KAJIMURA, K

“…Using scanning tunneling microscopy (STM), we investigated the surface step structure of Si(001) with a misorientation of 0.3° towards [110]. The STM images…”
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Electro- and photoreflectance of ultrathin Ge/Si superlattices grown by phase-locked epitaxy by ASAMI, K, MIKI, K, SAKAMOTO, K, SAKAMOTO, T, GONDA, S

“…Optical studies of ultrathin Ge/Si superlattices grown on (001) Si substrates by phase-locked epitaxy have been carried out. The structures consist of…”
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Si(001)-2×1 single-domain structure obtained by high temperature annealing by SAKAMOTO, T, HASHIGUCHI, G

“…Si(001)-2×1 single-domain structure has been observed by reflection high-energy electron diffraction (RHEED) after a substrate annealing at a temperature of…”
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Si/Ge/Si monolayer heterostructure on Si(100) studied by surface-sensitive EXAFS by OYANAGI, H, SAKAMOTO, T, SAKAMOTO, K, MATSUSHITA, T, YAO, T, ISHIGURO, T

“…Si/Ge/Si monolayer heterostructures grown on Si(100) by molecular beam epitaxy (MBE) have been studied by a surface sensitive EXAFS technique. It is shown that…”
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High impurity doping in Si-MBE using liquid Ga ion source by SAKAMOTO, T, KOMURO, M

“…Low-energy implantation doping techniques in Si-MBE using a liquid metal ion source of Ga are reported. Ga ions accelerated up to 500 V or 1000 V are projected…”
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