Search Results - "Sakalauskas, E."

Growth and characterization of InGaN by RF-MBE by Kraus, A., Hammadi, S., Hisek, J., Buß, R., Jönen, H., Bremers, H., Rossow, U., Sakalauskas, E., Goldhahn, R., Hangleiter, A.

“…In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized…”
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Growth Studies on Quaternary AlInGaN Layers for HEMT Application by Reuters, Benjamin, Wille, A., Holländer, B., Sakalauskas, E., Ketteniss, N., Mauder, C., Goldhahn, R., Heuken, M., Kalisch, H., Vescan, A.

“…Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible…”
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Dielectric function and bowing parameters of InGaN alloys by Sakalauskas, E., Tuna, Ö., Kraus, A., Bremers, H., Rossow, U., Giesen, C., Heuken, M., Hangleiter, A., Gobsch, G., Goldhahn, R.

“…Ga‐rich (0001)‐oriented InxGa1−xN alloys grown by molecular beam epitaxy or metal‐organic vapour phase epitaxy on GaN/sapphire templates were investigated by…”
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Structural characterization of sputtered indium oxide films deposited at room temperature by Hotovy, I., Pezoldt, J., Kadlecikova, M., Kups, T., Spiess, L., Breza, J., Sakalauskas, E., Goldhahn, R., Rehacek, V.

“…Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were…”
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Optical properties of InN grown on Si(111) substrate by Sakalauskas, E., Schley, P., Räthel, J., Klar, T. A., Müller, R., Pezoldt, J., Tonisch, K., Grandal, J., Sánchez-García, M. A., Calleja, E., Vilalta-Clemente, A., Ruterana, P., Goldhahn, R.

“…A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si(111) substrates is presented. Two types…”
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Dielectric function of Al-rich AlInN in the range 1-18 eV by Sakalauskas, E., Behmenburg, H., Schley, P., Gobsch, G., Giesen, C., Kalisch, H., Jansen, R. H., Heuken, M., Goldhahn, R.

“…The ordinary dielectric function (DF) is presented for high quality Al‐rich Al1−xInxN alloy films pseudomorphically grown on GaN in the photon energy range…”
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Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates by Schley, P., Räthel, J., Sakalauskas, E., Gobsch, G., Wieneke, M., Bläsing, J., Krost, A., Koblmüller, G., Speck, J. S., Goldhahn, R.

“…Wurtzite A‐ and M‐plane InN films were grown by molecular beam epitaxy (MBE) on free‐standing GaN substrates. Spectroscopic ellipsometry (SE) in the photon…”
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A study of heat conduction in structural ceramic materials. Part IV. The method of descriptive identification of heat conduction by ABRAITIS, R. I, DARGIS, A. K, RUSYATSKAS, A. A, SAKALAUSKAS, E. I

“…Methods of descriptive identification of heat conduction in structural ceramic materials are described. The method of descriptive regularization is applied in…”
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A study of thermal conductivity of structural ceramic materials. Part I. State of research of thermal conductivity of structural materials by ABRAITIS, R. J, DARGIS, A. K, RUSYATSKAS, A. A, SAKALAUSKAS, E. J

“…At the present time, experiment is a reliable method for studying the thermal conductivity of new ceramic materials and especially refractories. However, the…”
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Heat-conductivity studies of structural ceramic materials. Part VII. Heat conductivity of an Si3N4-based ceramic by ABRAITIS, R. I, DARGIS, A. K, RUSYATSKAS, A. A, SAKALAUSKAS, E. I

“…The heat conductivity of an Si^sub 3^N^sub 4^-based ceramic is studied. A sintered silicon carbide, prepared from ultrafine (0.5 μm) powder Si^sub 3^N^sub 4^…”
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Heat-conductivity studies of structural ceramic materials. Part VI. A study of the heat conductivity of an Al2O3-based ceramic by ABRAITIS, R. I, DARGIS, A. K, RUSYATSKAS, A. A, SAKALAUSKAS, E. I

“…The heat conductivity of an Al^sub 2^O^sub 3^-based ceramic (KPF-5-grade refractory material) is studied. Two sets of specimens are tested: intact specimens,…”
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New Asymmetric Cipher Based On Matrix Power Function and Its Implementation in Microprocessors Efficiency Investigation by Mihalkovich, A., Sakalauskas, E., Venckauskas, A.

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Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content by Romero, M. F., Feneberg, M., Moser, P., Berger, C., Bläsing, J., Dadgar, A., Krost, A., Sakalauskas, E., Goldhahn, R.

“…The luminescence properties of In x Al 1−x N/GaN heterostructures are investigated systematically as a function of the In content ( x =0.067−0.208). The…”
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A study of heat conduction in structural ceramic materials. Part V. Thermal conductivity of ceramics based on MgO by ABRAITIS, R. I, DARGIS, A. K, RUSYATSKAS, A. A, SAKALAUSKAS, E. J

“…The results of an experimental study are presented and the effectiveness of the earlier described methods is analyzed. The thermal conductivity of one and the…”
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Implementation Analysis of Matrix Power Cipher in Embedded Systems by Luksys, K., Sakalauskas, E., Venckauskas, A.

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Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate by Sakalauskas, E., Wieneke, M., Dadgar, A., Gobsch, G., Krost, A., Goldhahn, R.

“…The optical properties of a‐plane Al1−xInxN grown by metal‐organic vapor phase epitaxy on an a‐plane GaN/r‐plane sapphire template are reported. X‐ray…”
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Optical anisotropy of a ‐plane Al 0.8 In 0.2 N grown on an a ‐plane GaN pseudosubstrate by Sakalauskas, E., Wieneke, M., Dadgar, A., Gobsch, G., Krost, A., Goldhahn, R.

“…Abstract The optical properties of a ‐plane Al 1− x In x N grown by metal‐organic vapor phase epitaxy on an a ‐plane GaN/ r ‐plane sapphire template are…”
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Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate : Indium Nitride and Related Alloys by SAKALAUSKAS, E, WIENEKE, M, DADGAR, A, GOBSCH, G, KROST, A, GOLDHAHN, R

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Microprocessor Realization of Key Agreement Protocol based on Matrix Power Function by Vitkus, P., Sakalauskas, E., Listopadskis, N., Vitkiene, R.

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Microprocessor Implementation of Key Agreement Protocol Over the Ring of Multivariate Polynomials by Katvickis, A., Sakalauskas, E., Listopadskis, N.

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