Search Results - "Sajavaara, T"

Potku – New analysis software for heavy ion elastic recoil detection analysis by Arstila, K., Julin, J., Laitinen, M.I., Aalto, J., Konu, T., Kärkkäinen, S., Rahkonen, S., Raunio, M., Itkonen, J., Santanen, J.-P., Tuovinen, T., Sajavaara, T.

“…Time-of-flight elastic recoil detection (ToF-ERD) analysis software has been developed. The software combines a Python-language graphical front-end with a C…”
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Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon by Parashar, Piyush K., Kinnunen, S.A., Sajavaara, T., Toppari, J. Jussi, Komarala, Vamsi K.

“…Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured…”
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Mass calibration of the energy axis in ToF-E elastic recoil detection analysis by Meersschaut, J., Laricchiuta, G., Sajavaara, T., Vandervorst, W.

“…We report on procedures that we have developed to mass-calibrate the energy axis of ToF-E histograms in elastic recoil detection analysis. The obtained…”
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Control of Oxygen Nonstoichiometry and Magnetic Property of MnCo2O4 Thin Films Grown by Atomic Layer Deposition by Uusi-Esko, K, Rautama, E.-L, Laitinen, M, Sajavaara, T, Karppinen, M

“…Spinel-structured (Mn,Co)3O4 thin films were reproducibly fabricated by atomic layer deposition (ALD) using Mn(thd)3, Co(thd)2, and ozone as precursors. A full…”
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Tang dynasty (618–907) bowl measured with PIXE by Laitinen, M., Käyhkö, M., Hahn, G., von Uexküll-Güldenband, N., Sajavaara, T.

“…Brownish bowl originating from an underwater shipwreck located near Belitung island in the Java Sea, some 600km south-east from Singapore, has been measured…”
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Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions by Julin, J K, Chaudhuri, S, Laitinen, M, Sajavaara, T, Maasilta, I J

“…In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions,…”
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Energy loss and straggling of MeV Si ions in gases by Vockenhuber, C., Arstila, K., Jensen, J., Julin, J., Kettunen, H., Laitinen, M., Rossi, M., Sajavaara, T., Thöni, M., Whitlow, H.J.

“…We present measurements of energy loss and straggling of Si ions in gases. An energy range from 0.5 to 12MeV/u was covered using the 6MV EN tandem accelerator…”
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Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride by Barradas, N.P., Bergmaier, A., Mizohata, K., Msimanga, M., Räisänen, J., Sajavaara, T., Simon, A.

“…Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques,…”
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Transition-Edge Sensors for Particle Induced X-ray Emission Measurements by Palosaari, M. R. J., Kinnunen, K. M., Julin, J., Laitinen, M., Napari, M., Sajavaara, T., Doriese, W. B., Fowler, J., Reintsema, C., Swetz, D., Schmidt, D., Ullom, J., Maasilta, I. J.

“…In this paper we present a new measurement setup, where a transition-edge sensor detector array is used to detect X-rays in particle induced X-ray emission…”
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Monte Carlo simulation of multiple and plural scattering in elastic recoil detection by Arstila, K, Sajavaara, T, Keinonen, J

“…In heavy ion elastic recoil detection measurements, the multiple and plural scattering of in-going primary ions and out-coming recoiled atoms introduces a…”
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Atomic Layer Deposition of Hafnium Dioxide Films Using Hafnium Bis(2-butanolate)bis(1-methoxy-2-methyl-2propanolate) and Water by Kukh, K, Ritala, M, Leskela, M, Sajavaara, T, Keinonen, J, Jones, A C, Roberts, J L

“…High-permittivity gate insulator technology is currently under development in order to overcome problems faced during the downscaling of the dimensions of…”
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Linear Energy Transfer of Heavy Ions in Silicon by Javanainen, A., Malkiewicz, T., Perkowski, J., Trzaska, W.H., Virtanen, A., Berger, G., Hajdas, W., Harboe-Sorensen, R., Kettunen, H., Lyapin, V., Mutterer, M., Pirojenko, A., Riihimaki, I., Sajavaara, T., Tyurin, G., Whitlow, H.J.

“…Researchers performing radiation testing on electronic components often rely on semi-empirical prediction codes for determining the linear energy transfer…”
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Considerations about multiple and plural scattering in heavy-ion low-energy ERDA by Giangrandi, S., Arstila, K., Brijs, B., Sajavaara, T., Vantomme, A., Vandervorst, W.

“…Low-energy heavy-ion Elastic Recoil Detection Analysis (ERDA) is becoming a mature technique for high-resolution characterization of thin films, i.e. below 50…”
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Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species by Javanainen, A., Sillanpaa, M., Trzaska, W.H., Virtanen, A., Berger, G., Hajdas, W., Harboe-Sorensen, R., Kettunen, H., Malkiewicz, T., Mutterer, M., Perkowski, J., Pirojenko, A., Riihimaki, I., Sajavaara, T., Tyurin, G., Whitlow, H.J.

“…Experimental linear energy transfer values of heavy ions in silicon are presented with comparison to estimations from different semi empirical codes widely…”
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X-Ray absorption studies of cubic boron–carbon–nitrogen films grown by ion beam assisted evaporation by Gago, R, Jiménez, I, Sajavaara, T, Rauhala, E, Albella, J.M

“…We have synthesised boron carbon nitride (BCN) thin films with tetrahedral structure by evaporation of B 4C and concurrent ion bombardment. The film structure…”
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Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors by Kinnunen, S., Arstila, K., Sajavaara, T.

“…[Display omitted] •Concentration and source of impurity H was studied using isotopic labeling.•H and C impurities decrease with increasing deposition…”
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Al2O3 ALD films grown using TMA + rare isotope 2 H 2 16 O and 1 H 2 18 O precursors by Kinnunen, S., Arstila, K., Sajavaara, T.

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Round Robin: measurement of H implantation distributions in Si by elastic recoil detection by Boudreault, G, Elliman, R.G, Grötzschel, R, Gujrathi, S.C, Jeynes, C, Lennard, W.N, Rauhala, E, Sajavaara, T, Timmers, H, Wang, Y.Q, Weijers, T.D.M

“…A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5 × 10 16 atoms/cm 2. The uniformity of the implant was better than 2%…”
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Studies of impurity deposition/implantation in JET divertor tiles using SIMS and ion beam techniques by Likonen, J., Lehto, S., Coad, J.P., Renvall, T., Sajavaara, T., Ahlgren, T., Hole, D.E., Matthews, G.F., Keinonen, J.

“…At the end of C4 campaign at JET, a 1% SiH 4/99% D 2 mixture and pure 13CH 4 were injected into the torus from the outer divertor wall and from the top of the…”
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Atomic Layer Deposition of SrS and BaS Thin Films Using Cyclopentadienyl Precursors by Ihanus, J, Hänninen, T, Hatanpää, T, Aaltonen, T, Mutikainen, I, Sajavaara, T, Keinonen, J, Ritala, M, Leskelä, M

“…SrS and BaS thin films were grown on glass substrates using an atomic layer deposition (ALD) technique and (C5 i Pr3H2)2Sr(THF) (1), (C5Me5)2Sr(THF) x (2),…”
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