Search Results - "Sailer, Holger"

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    Adaptive Layout Technique for Microhybrid Integration of Chip-Film Patch by Alavi, Golzar, Sailer, Holger, Albrecht, Bjoern, Harendt, Christine, Burghartz, Joachim N.

    “…In this paper, a unique adaptive layout methodology for accurate interconnection between two or more functional chips at the wafer level is presented. The…”
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    Journal Article
  3. 3

    Determination of best focus and optimum dose for variable shaped e-beam systems by applying the isofocal dose method by Keil, Katja, Choi, Kang-Hoon, Hohle, Christoph, Kretz, Johannes, Lutz, Tarek, Bettin, Lutz, Boettcher, Monika, Hahmann, Peter, Kliem, Karl-Heinz, Schnabel, Bernd, Irmscher, Mathias, Sailer, Holger

    Published in Microelectronic engineering (01-05-2008)
    “…Electron beam direct write (EBDW) provides high resolution for device and technology development. A new variable shaped beam system with improved electron…”
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    Journal Article Conference Proceeding
  4. 4

    Towards Commercially Available Quartz Calibration Substrates by Galatro, Luca, De Martino, Carmine, van lt Hof, Jos, Alomari, Mohammed, Sailer, Holger, Burghartz, Joachim, Spirito, Marco

    “…In this contribution we present the developments and current performance of calibration substrates manufactured on 150 mm Quartz wafers (675 μm thick) based on…”
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    Conference Proceeding
  5. 5

    Optimized adaptive layout technique for hybrid systems in foil by Alavi, Golzar, Burghartz, Joachim N., Sailer, Holger, Albrecht, Bjoern, Harendt, Christine, Burghartz, Joachim N.

    “…Compactness, cost, flexibility, and size of electronic devices play an important role for next generation consumer electronics. Flexible hybrid system in foil…”
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    Conference Proceeding
  6. 6

    Investigations on the mechanism of silicon etching with chlorine-trifluoride by Höchst, Arnim, Fischer, Frank, Kirbach, Gunter, Urban, Andrea, Becker, Volker, Irmscher, Mathias, Sailer, Holger, Kern, Dieter P.

    “…We investigated chlorine trifluoride ( Cl F 3 ) etching of silicon with a patterned oxide mask layer prepared by e-beam lithography. The mask apertures varied…”
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    Journal Article