Search Results - "Saijets, Jan"

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology by Forsten, Henrik, Saijets, Jan H., Kantanen, Mikko, Varonen, Mikko, Kaynak, Mehmet, Piironen, Petri

“…This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended…”
Get full text

Simulation and Modeling of Self-switching Devices by Åberg, Markku, Saijets, Jan, Song, Aimin, Prunnila, Mika

Get full text

Low loss KU‐ to KA‐band analog DMTL phase shifter with 360° phase shift by Saijets, Jan, Rantakari, Pekka, Vähä‐Heikkilä, Tauno

“…ABSTRACT A 15 GHz distributed MEMS transmission line (DMTL) based analog phase shifter was designed and characterized. The designed and measured device was…”
Get full text

A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology by Ahamed, Raju, Varonen, Mikko, Holmberg, Jan, Parveg, Dristy, Kantanen, Mikko, Saijets, Jan, Halonen, Kari A. I.

“…This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13  μ m SiGe BiCMOS technology for phased array applications. The…”
Get full text

Cryogenic Single-Chip Multi-Channel LNA by Varonen, Mikko, Parveg, Dristy, Lehtisyrja, Lassi, Sipola, Hannu, Saijets, Jan

“…This paper presents the integration of multiple cryogenic low-noise amplifiers (LNAs) on a single chip designed for superconducting nanowire single photon…”
Get full text

AC modeling of the MOSFET channel series resistance by Saijets, Jan, Holmberg, Jan, Åberg, Markku

“…The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance…”
Get full text

Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba x Sr 1-x TiO 3 Thin Films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, Van Dijken, Sebastiaan

Get full text

Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba^sub x^Sr^sub 1-x^TiO^sub 3^ Thin Films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, Van Dijken, Sebastiaan

“…The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of …”
Get full text

Engineered High Resistivity Silicon Substrates in IPD Technology Used for Miniaturized sub-6 GHz Filters by Haapalinna, Atte, Holmberg, Heikki, Hujanen, Arto, Parkkinen, Katja, Rantakari, Pekka, Saijets, Jan, Vaha-Heikkia, Tauno

“…Engineered surface passivated high resistivity silicon (Si) substrates have been developed to improve performance of radio frequency devices. Measurements show…”
Get full text

Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, Van Dijken, Sebastiaan

“…The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of Ba x…”
Get full text

MOSFET RF Extraction Uncertainties Due To S Parameter Measurement Errors by Saijets, Jan, Åberg, Markku

Get full text

Feasibility of a cryogenic SiGe amplifier at 4 k by Aberg, Markku, Saijets, Jan

“…The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not…”
Get full text

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology by Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Saijets, Jan, Halonen, Kari A. I.

“…This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver…”
Get full text

Integrated Passive Device process for high quality factor passive components and modules by Vaha-Heikkila, Tauno, Saijets, Jan, Holmberg, Jan, Rantakari, Pekka, Ronkainen, Hannu, Tuovinen, Reijo

“…An Integrated Passive Device (IPD) technology has been developed for high quality factor (Q) passive components for radio frequency (RF) applications. This…”
Get full text

Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, van Dijken, Sebastiaan

“…Ferroelectrics 392, 3 (2009) The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice…”
Get full text

DC and AC characteristics and modeling of Si SSD-nano devices by Aberg, M., Saijets, J.

“…Silicon nano scale self switching device (SSD) and side gated transistor (SGT) are nano scale active components. These devices are manufactured with…”
Get full text

AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description by Saijets, J., Holmberg, J., Aberg, M.

“…The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and…”
Get full text

Silicon self-switching-device based logic gates operating at room temperature by Aberg, M., Saijets, J., Pursula, E., Prunnila, M., Ahopelto, J.

“…This paper presents first functional operational results of logic gates based on Silicon nano scale self switching devices (SSDs) and side gated transistors…”
Get full text