Search Results - "Saha, Jibesh K."
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Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETs
Published in Journal of computational electronics (01-12-2018)“…Aggressive technology scaling as per Moore’s law has led to elevated power dissipation levels owing to an exponential increase in subthreshold leakage power…”
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Journal Article -
2
Comparative Performance Analysis of TMD based Multi-Bridge Channel Field Effect Transistor
Published in 2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) (09-11-2020)“…Shifting from planer FET to FinFET has allowed us to significantly reduce the size of transistors while maintaining high-performance characteristics. However,…”
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Conference Proceeding -
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Characterization of Charge Plasma-based Junctionless Tunneling Field Effect Transistor (JL-TFET)
Published in 2020 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) (01-12-2020)“…The steep doping profile associated with conventional Tunneling Field Effect Transistor (TFET) provides significant hindrances from a fabrication perspective…”
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Conference Proceeding -
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Performance Enhancement of Ge/GaAs Heterostructure Tunnelling Field Effect Transistor
Published in 2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) (09-11-2020)“…Tunnelling Field Effect Transistor (TFET) is an emerging alternative to Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in device technology as the…”
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Conference Proceeding -
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Impact of scaling channel length on the performances of nanoscale FETs
Published in 2016 9th International Conference on Electrical and Computer Engineering (ICECE) (01-12-2016)“…The investigation of short-channel effects (SCE) due to channel length reduction for four different types of n-channel FETs: Bulk MOSFET, SOI MOSFET, DG MOSFET…”
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Conference Proceeding -
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Short Channel Effects Characterization of 3-D FinFET for High-k Gate Dielectrics
Published in 2018 International Conference on Innovations in Science, Engineering and Technology (ICISET) (01-10-2018)“…In modern technology FinFET replaces MOSFET as aggressive technology scaling as per Moore's law has led to elevated power dissipation levels owing to short…”
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Conference Proceeding