Search Results - "Saha, Atanu"
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Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study
Published in Scientific reports (23-06-2020)“…We analyze the ferroelectric domain-wall induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor…”
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2
Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO
Published in Applied physics letters (20-05-2019)“…In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential…”
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3
α-In2Se3 based ferroelectric-semiconductor metal junction for non-volatile memories
Published in Applied physics letters (02-11-2020)“…In this work, we theoretically and experimentally investigate the working principle and nonvolatile memory (NVM) functionality of a 2D α-In2Se3-based…”
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4
Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration
Published in ACS nano (27-08-2019)“…A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered…”
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5
Polarization switching in Hf0.5Zr0.5O2-dielectric stack: The role of dielectric layer thickness
Published in Applied physics letters (20-09-2021)“…Understanding the role of the dielectric (DE) layer in ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) based devices (e.g., ferroelectric-field-effect-transistors,…”
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6
ADRA: Extending Digital Computing-in-Memory with Asymmetric Dual-Row-Activation
Published in IEEE transactions on circuits and systems. II, Express briefs (01-08-2023)“…Computing in-memory (CiM) has emerged as an attractive technique to mitigate the von-Neumann bottleneck. Current digital CiM approaches for in-memory operands…”
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7
Preoperative Glycosylated Hemoglobin: A Risk Factor for Patients Undergoing Coronary Artery Bypass
Published in The Annals of thoracic surgery (01-08-2017)“…Background The prevalence of diabetes in the population of patients presenting with coronary artery disease continues to rise. The aim of this study was to…”
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8
Oscillators Utilizing Ferroelectric-Based Transistors and Their Coupled Dynamics
Published in IEEE transactions on electron devices (01-05-2019)“…We propose the application of ferroelectric (FE)-based transistors, viz., negative capacitance FET (NCFET) and Hysteretic ferroelectric FET (FEFET) in the…”
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9
Failure Analysis of Boiler Water Wall Tube: A Case Study from Thermal Power Plant
Published in Journal of failure analysis and prevention (01-02-2022)“…The boiler tube in power plant has been failed after long term in service. With an aid of various characterization techniques such as visual inspection,…”
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10
Crystallization Maps for SiCO Amorphous Ceramics
Published in Journal of the American Ceramic Society (01-02-2007)“…Amorphous silicon–oxycarbide (SiCO) can retain large mole fractions of carbon when it is made from controlled pyrolysis of silicon‐based polymers. The…”
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A Model for the Nanodomains in Polymer-Derived SiCO
Published in Journal of the American Ceramic Society (01-07-2006)“…The polymer‐based synthesis of ceramics such as SiCO (and SiCN) leads to the incorporation of significant amounts of carbon into their molecular structure. A…”
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12
Threshold Selector and Capacitive Coupled Assist Techniques for Write Voltage Reduction in Metal-Ferroelectric-Metal Field-Effect Transistor
Published in IEEE transactions on electron devices (01-12-2021)“…We propose device and circuit assist techniques to lower the ferroelectric-metal field-effect transistor (FeMFET) write voltage while lowering the effect of…”
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13
Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
Published in IEEE journal on exploratory solid-state computational devices and circuits (01-12-2021)“…We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs…”
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14
Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide
Published in Scientific reports (29-04-2024)“…180 ∘ domains walls (DWs) of head-to-head/tail-to-tail (H–H/T–T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding…”
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15
Graphene Nanoribbon Quantum-Well Interband and Intersubband Photodetector
Published in IEEE transactions on electron devices (01-12-2015)“…1-D quantum-well (QW) formation and energy state confinement in armchair graphene nanoribbon (A-GNR) heterostructures have been studied. A photodetector device…”
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16
Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP 2 S 6 for Solid-State Refrigeration
Published in ACS nano (27-08-2019)“…A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered…”
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Journal Article -
17
Multisensory speech enhancement using lower‐frequency components from bone‐conducted speech
Published in IEEJ transactions on electrical and electronic engineering (01-11-2019)“…In this article, we present a multisensory speech enhancement technique by suppressing low‐frequency band noise from the speech signal. Speech is often…”
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18
Persistent cerebral desaturation on near-infrared spectroscopy without neurological insult
Published in Indian journal of anaesthesia (01-08-2018)“…[4] Artifactually low rSO2 values may be attributable to cranial bone anomaly or frontal sinus inflammation, presence of infrared-absorbing intracranial or…”
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19
Mechanism of accelerated spheroidization of steel during cyclic heat treatment around the upper critical temperature
Published in Philosophical magazine letters (01-04-2013)“…An investigation has been carried out on the mechanism of accelerated spheroidization in 0.6 wt.% carbon steel under cyclic heat treatment involving repeated…”
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20
Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications
Published in 2020 Device Research Conference (DRC) (01-06-2020)“…Among several non-volatile memories (NVMs), ferroelectric (FE) based memories show distinct advantages due to electric field ( E )-driven low-power write [1] -…”
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