Search Results - "Saghi, Z."

A novel 3D absorption correction method for quantitative EDX-STEM tomography by Burdet, Pierre, Saghi, Z., Filippin, A.N., Borrás, A., Midgley, P.A.

“…This paper presents a novel 3D method to correct for absorption in energy dispersive X-ray (EDX) microanalysis of heterogeneous samples of unknown structure…”
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Impact of pore anisotropy on the thermal conductivity of porous Si nanowires by Ferrando-Villalba, P., D’Ortenzi, L., Dalkiranis, G. G., Cara, E., Lopeandia, A. F., Abad, Ll, Rurali, R., Cartoixà, X., De Leo, N., Saghi, Z., Jacob, M., Gambacorti, N., Boarino, L., Rodríguez-Viejo, J.

“…Porous materials display enhanced scattering mechanisms that greatly influence their transport properties. Metal-assisted chemical etching (MACE) enables…”
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Author Correction: Impact of pore anisotropy on the thermal conductivity of porous Si nanowires by Ferrando-Villalba, P., D’Ortenzi, L., Dalkiranis, G. G., Cara, E., Lopeandia, A. F., Abad, Ll, Rurali, R., Cartoixà, X., De Leo, N., Saghi, Z., Jacob, M., Gambacorti, N., Boarino, L., Rodríguez-Viejo, J.

“…A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper…”
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Complementary characterization method of 3D arsenic doping by using medium energy ion scattering by Woguia, L Penlap, Pierre, F, Sanchez, D F, Marmitt, G G, Saghi, Z, Jalabert, D

“…We report on a new characterization method of 3D-doping performed by arsenic implantation into FinFET-like nanostructures by using Medium Energy Ion…”
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Electron tomography of regularly shaped nanostructures under non-linear image acquisition by SAGHI, Z, XU, X, MÖBUS, G

“…Electron tomography allows the 3D quantitative characterization of nanostructures, provided a monotonic relationship is fulfilled between the projected signal…”
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Three-dimensional chemical analysis of tungsten probes by energy dispersive x-ray nanotomography by Saghi, Z., Xu, X., Peng, Y., Inkson, B., Möbus, G.

“…The chemical distribution of oxide layers around functional tungsten nanotips is studied using electron tomography. Three-dimensional element distribution…”
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Electron beam nanofabrication of ferromagnetic nanostructures in TEM by Gnanavel, T., Mat Yajid, M. A., Saghi, Z., Peng, Y., Inkson, B. J., Gibbs, M. R. J., Möbus, G.

“…Electron beam (e-beam) fabrication of nanostructures by transmission electron microscopy (TEM) is rapidly developing into a top-down nanofabrication method for…”
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Three-dimensional characterization of multiply twinned nanoparticles by high-angle tilt series of lattice images and tomography by Xu, X. J., Saghi, Z., Inkson, B. J., Möbus, G.

“…A new electron tomography methodology is presented which allows the reconstruction of external particle shape from lattice resolved high-resolution electron…”
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MRT letter: Full-tilt electron tomography with a piezo-actuated rotary drive by Xu, X.J., Lockwood, A., Guan, W., Gay, R., Saghi, Z., Wang, J.J., Peng, Y., Inkson, B.J., Möbus, G.

“…Piezoelectric nanoactuation, which is rapidly becoming established as state‐of‐the‐art positioning control in transmission electron microscopy (TEM), is…”
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Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain by Barraud, S., Lapras, V., Samson, M. P., Gaben, L., Grenouillet, L., Maffini-Alvaro, V., Morand, Y., Daranlot, J., Rambal, N., Previtalli, B., Reboh, S., Tabone, C., Coquand, R., Augendre, E., Rozeau, O., Hartmann, J. M., Vizioz, C., Arvet, C., Pimenta-Barros, P., Posseme, N., Loup, V., Comboroure, C., Euvrard, C., Balan, V., Tinti, I., Audoit, G., Bernier, N., Cooper, D., Saghi, Z., Allain, F., Toffoli, A., Faynot, O., Vinet, M.

“…We report on vertically stacked horizontal Si NanoWires (NW) /p-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs…”
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Guidelines for intermediate back end of line (BEOL) for 3D sequential integration by Fenouillet-Beranger, C., Beaurepaire, S., Deprat, F., de Sousa, A. Ayres, Brunet, L., Batude, P., Rozeau, O., Andrieu, F., Besombes, P., Samson, M.-P, Previtali, B., Nemouchi, F., Rodriguez, G., Rodriguez, P., Famulok, R., Rambal, N., Balan, V., Saghi, Z., Jousseaume, V., Guerin, C., Ibars, F., Proud, F., Nouguier, D., Ney, D., Delaye, V., Dansas, H., Federspiel, X., Vinet, M.

“…For the first time the thermal stability of a new fluorine-free (F-free) W barrier coupled with W interconnections enabling 22% line 1 resistance improvement…”
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High performance CMOS FDSOI devices activated at low temperature by Pasini, L., Batude, P., Lacord, J., Casse, M., Mathieu, B., Sklenard, B., Luce, F. Piegas, Micout, J., Payet, A., Mazen, F., Besson, P., Ghegin, E., Borrel, J., Daubriac, R., Hutin, L., Blachier, D., Barge, D., Chhun, S., Mazzocchi, V., Cros, A., Barnes, J.-P, Saghi, Z., Delaye, V., Rambal, N., Lapras, V., Mazurier, J., Weber, O., Andrieu, F., Brunet, L., Fenouillet-Beranger, C., Rafhay, Q., Ghibaudo, G., Cristiano, F., Haond, M., Boeuf, F., Vinet, M.

“…3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are…”
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Towards 500°C SPER activated devices for 3D sequential integration by Micout, J., Sklenard, B., Batude, P., Berthelon, R., Rafhay, Q., Lacord, J., Mathieu, B., Pasini, L., Saghi, Z., Delaye, V., Brunet, L., Fenouillet-Beranger, C., Joblot, S., Mazen, F., Mazzocchi, V., Colinge, J-P., Ghibaudo, G., Vinet, M.

“…This work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration…”
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High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration by Micout, J., Lapras, V., Batude, P., Fenouillet-Beranger, C., Lacord, J., Sklenard, B., Mathieu, B., Rafhay, Q., Mazzocchi, V., Colinge, J.-P, Lachal, L., Garros, X., Casse, M., Toffoli, A., Romano, G., Allain, F., Brunet, L., Hartmann, J.-M, Bortolin, R., Mazen, F., Barraud, S., Rambal, N., Tabone, C., Samson, M.-P, Besombes, P., Delaye, V., Saghi, Z., Loup, V., Comboroure, C., Balan, V., Desvoivres, L., Vizioz, C., Ghibaudo, G., Vinet, M.

“…For the first time, a low temperature (LT) FinFET process is demonstrated, using Solid Phase Epitaxy Regrowth (SPER), gate last integration and Self Aligned…”
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