Search Results - "Safryuk, N. V."

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures by Kladko, V. P., Kuchuk, A. V., Safryuk, N. V., Machulin, V. F., Belyaev, A. E., Hardtdegen, H., Vitusevich, S. A.

“…The structural properties of AlGaN/GaN heterostructures grown by metal organic chemical vapor deposition on sapphire substrates with different thicknesses were…”
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Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures by Belyaev, A. E., Boltovets, N. S., Klad’ko, V. P., Safryuk-Romanenko, N. V., Lubchenko, A. I., Sheremet, V. N., Shynkarenko, V. V., Slepova, A. S., Pilipenko, V. A., Petlitskaya, T. V., Pilipchuk, A. S., Konakova, R. V., Sachenko, A. V.

“…The temperature dependences of the specific contact resistance of silicon ρ c with a doping step are measured experimentally and described theoretically. The…”
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Investigation of Plasmon Gold Film Nanostructures by Means of both X-Ray Reflectometry and Diffractometry by Gudymenko, O. Y., Kryvyi, S. B., Stanchu, H. V., Kladko, V. P., Safryuk, N. V., Slobodian, M. V.

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Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions by Sizov, F. F., Savkina, R. K., Smirnov, A. B., Udovytska, R. S., Kladko, V. P., Gudymenko, A. I., Safryuk, N. V., Lytvyn, O. S.

“…The characteristics of a damaged layer of p -Cd x Hg 1 − x Te/CdZnTe ( x ∼ 0.223) heterostructures after implantation by 100-keV silver ions with the…”
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Temperature dependences of the contact resistivity in ohmic contacts to n+-InN by Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Brunkov, P. N., Jmerik, V. N., Ivanov, S. V., Kapitanchuk, L. M., Konakova, R. V., Klad’ko, V. P., Romanets, P. N., Saja, P. O., Safryuk, N. V., Sheremet, V. N.

“…The temperature dependences of the contact resistivity (ρ c ) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10…”
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Mechanism of strain relaxation by twisted nanocolumns revealedin AlGaN/GaN heterostructures by Kladko, V. P., Kuchuk, A. V., Safryuk, N. V., Machulin, V. F., Belyaev, A. E., Hardtdegen, H., Vitusevich, S. A.

“…The structural properties of AlGaN/GaN heterostructures grown by metal organic chemical vapor deposition on sapphire substrates with different thicknesses were…”
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Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP by Belyaev, A. E.

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Ohmic contacts based on Pd to indium phosphide Gunn diodes by Belyaev, A. E.

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X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure by Strelchuk, V. V., Kladko, V. P., Avramenko, E. A., Kolomys, O. F., Safryuk, N. V., Konakova, R. V., Yavich, B. S., Valakh, M. Ya, Machulin, V. F., Belyaev, A. E.

“…High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In x Ga 1 − x…”
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Resistivity distribution of Au-Ti-Pd ohmic contacts to n-InN by Sai, P. O., Safryuk, N. V., Shynkarenko, V. V.

“…Development of ohmic contacts to InN films is promising for a future technology of gigahertz electronics and modern high-electron-mobility transistors. From…”
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