Search Results - "Safriuk, N V"

Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy by Nikolenko, A.S., Strelchuk, V.V., Safriuk, N.V., Kryvyi, S.B., Kladko, V.P., Oberemok, O.S., Borkovska, L.V., Sadofyev, Yu.G.

“…The structural and optical properties of the Ge1−xSnx layers with Sn mole fraction x of about 0.04 and 0.07 grown by molecular beam epitaxy on strain relaxed…”
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Modelling of X-ray diffraction curves for GaN nanowires on Si(111) by Kladko, V.P., Kuchuk, А.V., Stanchu, H.V., Safriuk, N.V., Belyaev, A.E., Wierzbicka, A., Sobanska, M., Klosek, K., Zytkiewicz, Z.R.

“…X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(111) substrates were examined theoretically and experimentally…”
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Atomic force microscopy and Raman spectroscopy of Pb1−xSnxTe surfaces polished after treatment with H2O2–HBr–ethylene glycol etchants by Malanych, G. P., Kolomys, O. F., Korchovyi, A. A., Safriuk, N. V., Tomashyk, V. M.

“…The morphology and microstructure of the Pb 1− x Sn x Te surfaces polished by the H 2 O 2 –HBr–ethylene glycol etchants have been investigated using atomic…”
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Atomic force microscopy and Raman spectroscopy of Pb1−x Sn x Te surfaces polished after treatment with H2O2–HBr–ethylene glycol etchants by Malanych, G P, Kolomys, O F, Korchovyi, A A, Safriuk, N V, Tomashyk, V M

“…The morphology and microstructure of the Pb1−xSnxTe surfaces polished by the H2O2–HBr–ethylene glycol etchants have been investigated using atomic force and…”
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Modelling of X-ray diffraction curves for GaN nanowires on Si(1 1 1) by Kladko, V P, Kuchuk, A V, Stanchu, H V, Safriuk, N V, Belyaev, A E, Wierzbicka, A, Sobanska, M, Klosek, K, Zytkiewicz, Z R

“…X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(1 1 1) substrates were examined theoretically and experimentally…”
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X-ray diffraction investigation of GaN layers on Si(111) and Al2O3 (0001) substrates by Safriuk, N.V.

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios by Kladko, V.P.

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Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures by Kladko, V. P., Kuchuk, A. V., Safriuk, N. V., Machulin, V. F., Belyaev, A. E., Konakova, R. V., Yavich, B. S., Ber, B. Ya, Kazantsev, D. Yu

“…The methods of high-resolution X-ray diffraction have been used to study the multilayered structures in an In x Ga 1 − x N/GaN system grown by the method of…”
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Current transport through ohmic contacts to indiume nitride with high defect density by Sai, P. O., Safriuk, N. V., Shynkarenko, V. V.

“…The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward Indium Nitride (with different doping level 2.0 · 10 18 and…”
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Current transport through ohmic contacts to indiume nitride with high defect density by Sai, P.O., Safriuk, N.V., Shynkarenko, V.V.

“…The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward Indium Nitride (with different doping level 2.0 · 10 18 and…”
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