Search Results - "Sadoh, T."

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding by Chikita, H., Matsumura, R., Kai, Y., Sadoh, T., Miyao, M.

“…To produce high-performance devices on flexible plastic substrates, it is essential to form Ge-based group IV semiconductors on insulating substrates at low…”
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Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier by Ando, Y., Hamaya, K., Kasahara, K., Kishi, Y., Ueda, K., Sawano, K., Sadoh, T., Miyao, M.

“…We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3Si/Si Schottky-tunnel-barrier…”
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Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces by Yamane, K., Hamaya, K., Ando, Y., Enomoto, Y., Yamamoto, K., Sadoh, T., Miyao, M.

“…We study electrical properties of metal/Ge contacts with an atomically controlled interface, and compare them with those with a disordered one, where…”
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Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10μm) Ge-rich SiGe on insulator by gold-induced crystallization by Sadoh, T., Park, J.-H., Aoki, R., Miyao, M.

“…Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10μm) Ge-rich (≥50%) SiGe crystals on insulator are realized by the gold-induced…”
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Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization by Sadoh, T., Kurosawa, M., Toko, K., Miyao, M.

“…In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced…”
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In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth by Chikita, H., Matsumura, R., Tojo, Y., Yokoyama, H., Sadoh, T., Miyao, M.

“…High-quality Ge-on-insulator (GOI) structures are essential to realize next-generation large-scale integrated circuits, where GOI is employed as active layers…”
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Large single-crystal Ge-on-insulator by thermally-assisted (~400°C) Si-seeded-pulse-laser annealing by Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N., Miyao, M.

“…Low temperature (≤400°C) formation of orientation-controlled large (≥10µm) Ge-on-insulator (GOI) structures is desired to fabricate 3-dimensional large-scale…”
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High mobility sputtered InSb film by blue laser diode annealing by Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S., Noguchi, T.

“…InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion…”
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Sn-induced low-temperature (~150°C) crystallization of Ge on insulator by Ooato, A., Suzuki, T., Park, J.-H., Miyao, M., Sadoh, T.

“…Low-temperature formation (~150°C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as…”
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Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111) by Ueda, K., Hamaya, K., Yamamoto, K., Ando, Y., Sadoh, T., Maeda, Y., Miyao, M.

“…We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the…”
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Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge by Sadoh, T., Kumano, M., Kizuka, R., Ueda, K., Kenjo, A., Miyao, M.

“…Low-temperature (60°C) molecular beam epitaxy (MBE) of Fe3Si layers on Ge substrates was investigated. From x-ray diffraction and transmission electron…”
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Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures by Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N., Miyao, M.

“…Strain-induced enhancement of carrier mobility is essential for achieving high-speed transistors. The effects of thermal-annealing (temperature: 400–1150°C)…”
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Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy by YAMADA, S, YAMAMOTO, K, UEDA, K, ANDO, Y, HAMAYA, K, SADOH, T, MIYAO, M

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Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy by Tanaka, T., Tanaka, M., Itakura, M., Sadoh, T., Miyao, M.

“…Giant growth (~ 400 μm length) of single crystalline Ge on insulator (GOI) with (100), (110), and (111) orientations is demonstrated by lateral liquid-phase…”
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Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices by Miyao, M., Hamaya, K., Sadoh, T., Itoh, H., Maeda, Y.

“…Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux…”
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Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds by Sakane, T., Toko, K., Tanaka, T., Sadoh, T., Miyao, M.

“…► Melting growth of Ge layers on insulators (GOI) is investigated. ► Ni-imprint-induced Si (1 1 1) micro-crystals are employed as seed. ► Single-crystalline…”
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Pulsed laser crystallization of silicon–germanium films by Sameshima, T., Watakabe, H., Kanno, H., Sadoh, T., Miyao, M.

“…Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon–germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The…”
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Growth-direction-dependent characteristics of Ge-on-insulator by Si–Ge mixing triggered melting growth by Ohta, Y., Tanaka, T., Toko, K., Sadoh, T., Miyao, M.

“…► Melting growth technique is investigated to obtain Ge layers on insulators (GOI). ► Growth-direction-dependent growth characteristics are clarified. ► Large…”
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Low-temperature oriented growth in [CoPt/MgO] n multi-layer by Sadoh, T., Kurosawa, M., Kimura, M., Ueda, K., Koyanagi, M., Miyao, M.

“…Oriented-crystal growth of CoPt and MgO layers in the [CoPt/MgO] n stacked structures at low-temperatures (< 650 °C) was investigated. For the CoPt (thickness:…”
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Enhanced stress relaxation in ultrathin SiGe-on-insulator by H + -implantation-assisted oxidation by Sadoh, T., Matsuura, R., Miyao, M., Ninomiya, M., Nakamae, M., Enokida, T.

“…Effects of H + implantation ( ⩽ 5 × 10 16 cm − 2 ) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form…”
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