65nm LP/GP mix low cost platform for multi-media wireless and consumer applications

A complete 65nm CMOS platform, called LP/GP mix, has been developed employing thick oxide transistor (1.0), low power (LP) and general purpose (GP) devices on the same chip. Dedicated to wireless multi-media and consumer applications, this new triple gate oxide platform is low cost (+mask only) and...

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Published in:Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 pp. 423 - 426
Main Authors: Tavel, B., Duriez, B., Gwoziecki, R., Basso, M.T., Julien, C., Ortolland, C., Laplanche, Y., Fox, R., Saboure, E., Detcheverry, C., Boeuf, F., Morin, P., Barge, D., Bidaud, M., Bienacel, J., Garnier, P., Cooper, K., Chapon, J.D., Trouille, Y., Belledent, J., Broekaart, M., Gouraud, P., Denais, M., Huard, V., Rochereau, K., Difrenza, R., Planes, N., Marin, M., Boret, S., Gloria, D., Vanbergue, S., Abramowitz, P., Vishnubhotla, L., Reber, D., Stolk, P., Woo, M., Arnaud, F.
Format: Conference Proceeding
Language:English
Published: IEEE 2005
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Summary:A complete 65nm CMOS platform, called LP/GP mix, has been developed employing thick oxide transistor (1.0), low power (LP) and general purpose (GP) devices on the same chip. Dedicated to wireless multi-media and consumer applications, this new triple gate oxide platform is low cost (+mask only) and saves over 35% of dynamic power with the use of the low operating voltage GP. The LP/GP mix shows competitive digital performance with a ring oscillator (FO=1) speed equal to 7ps per stage (GP) and 6T-SRAM static power lower than 1 Op A/cell (LP). Compatible with mixed-signal design requirements, transistors show high voltage gain, low mismatch factor and low flicker noise. Moreover, to address mobile phone demands, excellent RF performance has been achieved with F/sub T/=160GHz for LP nMOS transistors.
ISBN:0780392035
9780780392038
ISSN:1930-8876
DOI:10.1109/ESSDER.2005.1546675