Search Results - "Sabitov, D. R."

New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm by Sabitov, D. R., Svetogorov, V. N., Ryaboshtan, Yu. L., Ladugin, M. A., Marmalyuk, A. A., Vasil’ev, M. G., Vasil’ev, A. M., Kostin, Yu. O., Shelyakin, A. A.

“…We report the fabrication of 1.5–1.6 μm light-emitting modules based on an AlGaInAs/InP heterostructure with strain-compensated quantum wells in new, smaller,…”
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Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs by Aslanyan, A. E., Avakyants, L. P., Chervyakov, A. V., Turkin, A. N., Kureshov, V. A., Sabitov, D. R., Marmalyuk, A. A.

“…InGaN/GaN-based LED heterostructures with different numbers of quantum wells are investigated by photocurrent spectroscopy in the wavelength range of 350–500…”
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Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy by Aslanyan, A. E., Avakyants, L. P., Chervyakov, A. V., Turkin, A. N., Mirzai, S. S., Kureshov, V. A., Sabitov, D. R., Marmalyuk, A. A.

“…The internal electric fields of InGaN/GaN-based green-emission LED heterostructures with various numbers of quantum wells in the active region are investigated…”
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Change in the Properties of AlGaN/InGaN/GaN Structures during the Operation of Electron-Beam-Pumped and Optically Pumped Pulse-Periodic Lasers Based on Them by Zverev, M. M., Gamov, N. A., Gladyshev, N. I., Zhdanova, E. V., Loktionov, D. E., Studionov, V. B., Kureshov, V. A., Mazalov, A. V., Sabitov, D. R., Padalitsa, A. A., Marmalyuk, A. A., Kozlovsky, V. I., Mituhliaev, V. B.

“…During the operation of lasers based on an AlGaN/InGaN/GaN structure with electron-beam- and optical pumping, a gradual decrease in the output power is…”
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Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping by Prudaev, I. A., Romanov, I. S., Kopyev, V. V., Brudnyi, V. N., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

“…We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple In x Ga 1–x…”
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Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method by Mazalov, A. V., Sabitov, D. R., Kureshov, V. A., Padalitsa, A. A., Marmalyuk, A. A., Akchurin, R. Kh

“…The influence of buffer layers formed at different temperatures and ratios of elements of groups V and III (V/III) on crystalline perfection of epitaxial…”
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Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures by Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kopyev, V. V., Novikov, Vad. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

“…The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN…”
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The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells by Romanov, I. S., Prudaev, I. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

“…The results of experimental studies of the internal quantum efficiency of blue LED structures with the multiple InGaN / GaN quantum wells and superlattices are…”
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Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency by Romanov, I. S., Prudaev, I. A., Marmalyuk, А. А., Kureshov, V. A., Sabitov, D. R., Маzalov, А. V.

“…The results of experimental studies of the dependence of an internal quantum efficiency of blue LED structures with multiple InGaN/GaN quantum wells on the…”
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Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates by Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kop’ev, V. V., Novikov, Vad. A., Маrmalyuk, А. А., Кureshov, V. А., Sabitov, D. R., Маzalov, А. V.

“…The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on…”
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Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate by Prudaev, I. A., Romanov, I. S., Novikov, Vad. A., Marmalyuk, А. А., Kureshov, V. A., Sabitov, D. R., Маzalov, А. V.

“…Effect of a patterned sapphire substrate on the increase of external quantum efficiency in “blue” InGaN/GaN LED structures is studied. It is shown that in…”
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High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement by Andreev, A. Yu, Zorina, S. A., Leshko, A. Yu, Lyutetskiy, A. V., Marmalyuk, A. A., Murashova, A. V., Nalet, T. A., Padalitsa, A. A., Pikhtin, N. A., Sabitov, D. R., Simakov, V. A., Slipchenko, S. O., Telegin, K. Yu, Shamakhov, V. V., Tarasov, I. S.

“…Laser diodes with a wavelength of 808 nm obtained by the MOC-hydride epitaxy in a system of the AlGaAs alloys have been studied. Parameters of the laser diodes…”
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High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures by Andreev, A. Yu, Leshko, A. Yu, Lyutetskiĭ, A. V., Marmalyuk, A. A., Nalyot, T. A., Padalitsa, A. A., Pikhtin, N. A., Sabitov, D. R., Simakov, V. A., Slipchenko, S. O., Khomylev, M. A., Tarasov, I. S.

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Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE by Akchurin, R. Kh, Andreev, A. Yu, Berliner, L. B., Govorkov, O. I., Duraev, V. P., Maldzhy, A. A., Marmalyuk, A. A., Padalitsa, A. A., Petrovsky, A. V., Sabitov, D. R., Sukharev, A. V.

“…Surface segregation during epitaxial growth of stressed InGaAs/GaAs quantum-well heterostructures significantly distorts the nominal concentration profile of…”
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