On the modulation phase efficiency of a silicon p-i-n diode optical modulator

This paper highlights the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOI). The device performance is predicted using 2D Silvaco CAD software under different applied voltages at wavelength 1.3 and 1.55 μm. Lπ and VπLπ is minim...

Full description

Saved in:

Bibliographic Details
Published in:	International Conference On Photonics 2010 pp. 1 - 3
Main Authors:	Hanim, A R, Mardiana, B, Hazura, H, Saari, Sahbudin
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-07-2010
Subjects:	carrier injection Facsimile Integrated optics modulation phase efficiency Optical modulation p-i-n diode modulator Photonics Silicon Silicon-on-Insulator
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	This paper highlights the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOI). The device performance is predicted using 2D Silvaco CAD software under different applied voltages at wavelength 1.3 and 1.55 μm. Lπ and VπLπ is minimized at a greater applied voltage. Operating at 1.55 μm is proven to be more efficient in terms of length of the modulator, Lπ and modulation phase efficiency. At 0.75V, Lπ and VπLπ are 0.527711 cm and 0.39578 Vcm respectively. Meanwhile, at 1V, Lπ and VπLπ are 0.01303 cm and 0.013029Vcm respectively. Therefore, a greater voltage is suggested for a shorter device length and greater modulation efficiency.
ISBN:	1424471869 9781424471867
ISSN:	2330-5665
DOI:	10.1109/ICP.2010.5604386