Search Results - "Saadat, OI"

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications by Saadat, O.I., Chung, J.W., Piner, E.L., Palacios, T.

“…This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high- k dielectric gate stack. In this new fabrication…”
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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With hbox Al 2 hbox O 3 Passivation by Chung, J W, Saadat, OI, Tirado, J M, Gao, Xiang, Guo, S, Palacios, T

“…We studied submicrometer (L sub(G) = 0.15-0.25 mu m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al…”
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