Search Results - "SWARTZLANDER, A. B"

Epitaxial growth of BGaAs and BGaInAs by MOCVD by Geisz, J.F., Friedman, D.J., Kurtz, Sarah, Olson, J.M., Swartzlander, A.B., Reedy, R.C., Norman, A.G.

“…The growth of epitaxial zinc-blende BxGa1−xAs and BxGa1−x−yInyAs alloys using diborane is complicated by a thermodynamic miscibility gap and complex gas-phase…”
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Development of Cu‐doped ZnTe as a back‐contact interface layer for thin‐film CdS/CdTe solar cells by Gessert, T. A., Mason, A. R., Sheldon, P., Swartzlander, A. B., Niles, D., Coutts, T. J.

“…The full potential of thin‐film, CdS/CdTe photovoltaic solar cells will not be realized until issues relating to the fabrication of environmentally stable,…”
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BGaInAs alloys lattice matched to GaAs by Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, Sarah R., Reedy, R. C., Swartzlander, A. B., Keyes, B. M., Norman, A. G.

“…We report the epitaxial growth of zinc-blende BxGa1−x−yInyAs and BxGa1−xAs on GaAs substrates with boron concentrations (x) up to 2%–4% by atmospheric-pressure…”
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Aluminum surface mobility on silicon nitride and on several silicon oxides by Levenson, L. L., Swartzlander, A. B., Yahashi, A., Usui, H., Yamada, I.

“…This report concerns the measurement of Al atom surface mobility on various substrates during physical vapor and neutral cluster deposition. One objective is…”
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Growth of diamond by rf plasma-assisted chemical vapor deposition by Meyer, Duane E., Ianno, Natale J., Woollam, John A., Swartzlander, A. B., Nelson, A. J.

“…A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This…”
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Relationship between thermal stress and structural properties of SrF2 films on (100)InP by SINGH, R, THAKUR, R. P. S, KATZ, A, NELSON, A. J, GEBHARD, S. C, SWARTZLANDER, A. B

“…The measurement of thermal stress of SrF2 films on InP as a function of temperature is presented. The in situ and ex situ rapid isothermal annealed films have…”
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Anisotropic surface mobility of aluminum on Si(111) during the initial stage of vapor deposition by Levenson, L. L., Usui, H., Yamada, I., Takagi, T., Swartzlander, A. B.

“…Scanning Auger electron microprobe line scan analysis was used to determine the surface mobility of Al atoms on Si(111) substrates cut 4° off axis in the…”
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Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates by SINGH, R, THAKUR, R. P. S, NELSON, A. J, GEBHARD, S. C, SWARTZLANDER, A. B

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Auger line shape and electron energy loss spectroscopy analysis of amorphous, microcrystalline, and β‐SiC by Nelson, A. J., Mason, A. R., Swartzlander, A. B., Kazmerski, L. L., Saxena, N., Fortmann, C. M., Russell, T. W. F.

“…Auger electron spectroscopy (AES) line shape analysis of the Si‐L 23 V V and C‐K L L peaks has been performed in conjunction with electron energy loss…”
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High Tc superconductor/noble-metal contacts with surface resistivities in the 10-10 Ω cm2 range by EKIN, J. W, LARSON, T. M, BERGREN, N. F, NELSON, A. J, SWARTZLANDER, A. B, KAZMERSKI, L. L, PANSON, A. J, BLANKENSHIP, B. A

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Electron beam effects in the analysis of compound semiconductors and devices by Kazmerski, L. L., Burnham, N. A., Swartzlander, A. B., Nelson, A. J., Asher, S. E.

“…The effects of electron beams on the analysis of CuInSe2 surfaces are examined in this paper. Potential changes in the surface chemistry—including oxidation…”
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Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors by Marudachalam, M., Hichri, I., Birkmire, R.W., Schultz, J.M., Swartzlander, A.B., Al-Jassim, M.M.

“…The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied…”
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Analytical chemical diagnostic testing of environmental exposed thin-film PV modules by Longrigg, P., Nelson, A.J., Swartzlander, A.B., Matson, R.

“…Environmentally exposed thin-film a-Si modules were tested using Auger spectroscopy and electron and optical microscopy. The results seem to indicate that…”
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Low temperature diffusivity for aluminum and silver in amorphous silicon by Berry, W.B., Emery, K.A., Swartzlander, A.B., Nelson, A.J.

“…The authors present experimental results which determine the diffusivities for aluminum and silver in amorphous silicon using segments cut from test coupons…”
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Interface properties of (Cd,Zn)S/CuInSe2 single‐crystal solar cells by Abou‐Elfotouh, F. A., Kazmerski, L. L., Coutts, T. J., Matson, R. J., Asher, S. E., Nelson, A. J., Swartzlander‐Franz, A. B.

“…Metal contacts to p‐type CuInSe2 and heterojunctions of the form n‐(CdZn)S/p‐CuInSe2 have been prepared, to investigate the electrical behavior and chemical…”
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Study of CdTe/CdS solar cells using CSS CdTe deposited at low temperature by Moutinho, H.R., Dhere, R.G., Al-Jassim, M.M., Ballif, C., Levi, D.H., Swartzlander, A.B., Young, M.R., Kazmerski, L.L.

“…The authors have prepared thin-film CdTe/CdS solar cells using CdTe deposited by close-spaced sublimation (CSS), at a temperature much lower (/spl sim/450/spl…”
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Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint by Geisz, J. F., Friedman, D. J., Kurtz, S. R., Olson, J. M., Kramer, C., Young, M., Barber, G., Swartzlander, A. B., Reedy, R. C., Norman, A. G.

“…Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs. BGaInAs can potentially be…”
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High Tc superconductor/noble-metal contacts with surface resistivities in the 10 to the -10th ohm sq cm range by Ekin, J W, Larson, T M, Bergren, N F, Nelson, A J, Swartzlander, A B

“…This paper reports on obtaining, in both gold and silver contacts, high-Tc contact surface resistivities as low as 10 to the -10th ohm sq cm, representing a…”
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YBA2Cu3O7-δ/insulator multi-layers for crossover fabrication by BEALL, J. A, CROMAR, M. W, HARVEY, T. E, JOHANSSON, M. E, ONO, R. H, REINTSEMA, C. D, RUDMAN, D. A, ASHER, S. E, NELSON, A. J, SWARTZLANDER, A. B

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YBa(2)Cu(3)O(7-delta )/insulatormulti-layers for crossover fabrication by Beall, J A, Cromar, M W, Harvey, T E, Johansson, M E, Ono, R H, Reintsema, C D, Rudman, D A, Asher, S E, Nelson, A J, Swartzlander, A B

“…The development of thin-film dielectrics compatible with the epitaxial growth of YBa(2)Cu(3)O(7-delta) (YBCO) is crucial to the fabrication of multilayer…”
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